Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K1 MARKING CODE Search Results

    K1 MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    K1 MARKING CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    diode marking H2

    Abstract: Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2
    Text: ACCU-GUARD FUSE MARKING CODES F1206A marking by special order only Code Current (A) C1 0.2 F1 0.25 G1 0.375 H1 0.50 K1 0.75 11 1.00 P1 1.25 L1 1.50 T1 1.75 21 2.00 V2 2.50 32 3.00 ⇒ Marking location : white side F0805B (all production is marked) Code


    Original     		F1206A F0805B F1206B F0612D F0603C F0402E F0603E diode marking H2 Marking H2 transistor mark code t1 COLOR marking codes marking code capacitors marking code k1 marking .H2 fuse MARKING CODE f2 marking code e2 marking code L2 PDF

    Untitled

    Abstract: No abstract text available
    Text: BCW71/BCW72 Features: tLow current max.100mA tLow voltage(max.45V) tLow noise Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BCW71 K1 SOT-23 BCW73 K2 SOT-23 Maximum Ratings & Characteristics: Tamb=25o Parameter: Symbol: Value:


    Original     		BCW71/BCW72 100mA) OT-23 BCW71 BCW73 100MHz 200Hz PDF

    marking code 68W

    Abstract: 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W
    Text: BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W Type Marking Ordering Code Pin Configuration Package BAT 68-04W 84s Q62702- 1 = A1 2 = K2 3 = K1/A2 SOT-323


    Original     		8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W 68W SOT marking code 68W sot 68w diode transistor 68W MARKING 68W DIODE BAT 68w transistor BAT68W BAT68-04W PDF

    CC3225

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : PROD. NAME CC3225□□□□L□-□□□ ABC'S DWG NO. Wound chip Inductor REV. PAGE 20131017-J 1 Ⅰ﹒Configuration and dimensions： 100 Marking Inductance code F H C A' F I K1 E K2 B A ※ △K=∣K1-K2∣=0.25 +0 G


    Original     		CC3225â 20131017-J AR-001C CC3225 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : PROD. NAME CM3225□□□□L□-□□□ ABC'S DWG NO. Wound Chip Inductor REV. 20121109-L PAGE 1 Ⅰ﹒Configuration and dimensions： 100 Marking Inductance code F H C A' A G I K1 E K2 F B I （ PCB Pattern ） ※ △K=∣K1-K2∣=0.25


    Original     		CM3225â 20121109-L AR-001C PDF

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATION FOR APPROVAL REF. : NAME CM3225□□□□L□-□□□ ABC'S DWG NO. PROD. Wound Chip Inductor REV. 20121109-L PAGE 1 Ⅰ﹒Configuration and dimensions： 100 Marking Inductance code F H C A' A G I K1 E K2 F B I （ PCB Pattern ） ※ △K=∣K1-K2∣=0.25


    Original     		CM3225â 20121109-L AR-001C PDF

    2N60 transistor

    Abstract: all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.07.14 Page No. : 1/6 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 2N60 transistor all transistor 2N60 transistor 2n60 02N60 2N60 MOSFET MARK y2 y1 marking code transistor 2n60 application 2n60 MOSFEt marking code diode 648 PDF

    MOSFET MARK y2

    Abstract: y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749
    Text: HI-SINCERITY Spec. No. : MOS200504 Issued Date : 2005.05.01 Revised Date : 2005.09.28 Page No. : 1/6 MICROELECTRONICS CORP. H02N60S Series H02N60S Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab


    Original     		MOS200504 H02N60S O-252 200oC 183oC 217oC 260oC 245oC H02N60SI, MOSFET MARK y2 y1 marking code transistor marking code diode 648 PB40 bridge mosfet k 61 y1 mosfet sn60 transistor mark code H1 diode marking code a2 y2 2N60S marking code 749 PDF

    02n60

    Abstract: all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60 H02N60E
    Text: HI-SINCERITY Spec. No. : MOS200403 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 1/7 MICROELECTRONICS CORP. H02N60 Series H02N60 Series Pin Assignment 3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Tab N-Channel Power Field Effect Transistor


    Original     		MOS200403 H02N60 O-252 200oC 183oC 217oC 260oC 245oC H02N60I, 02n60 all transistor 2N60 2N60 2N60 transistor PB40 bridge 2n60 application MOSFET MARK H1 TL 434 H02N60E PDF

    MOSFET MARK y2

    Abstract: transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60S H01N60SI
    Text: HI-SINCERITY Spec. No. : MOS200501 Issued Date : 2005.01.01 Revised Date : 2010.11.10 Page No. : 1/6 MICROELECTRONICS CORP. H01N60S Series H01N60S Series Pin Assignment 3-Lead Plastic TO-92 Package Code: A Pin 1: Gate Pin 2: Drain Pin 3: Source N-Channel Power Field Effect Transistor


    Original     		MOS200501 H01N60S 183oC 217oC 260oC 245oC 10sec H01N60SI, MOSFET MARK y2 transistor mark code t1 01N60 y1 marking code transistor MOSFET MARK H1 marking code n60 mosfet y1 transistor mark code H1 H01N60SI PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS70 .-04 .-05 .-06 Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2005-01-20 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1


    Original     		BAS70 OT-23 O-236) BAS70-series BAS70-05 BAS70-04 BAS70-06 PDF

    marking code 68W

    Abstract: marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode
    Text: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W »1/kl C1/C2 R _ 0 _ "ET T lT Tj Type Marking Ordering Code Pin Configuration BAT 68-04W


    OCR Scan     		8-04W BAT68-05W BAT68-06W 8-04W 8-05W 8-06W Q62702Q62702Q62702Q62702- OT-323 OT-323 marking code 68W marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode PDF

    marking code 68W

    Abstract: No abstract text available
    Text: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W


    OCR Scan     		8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS40 .-04 .-05 .-06 Schottky-Diodes Surface mount Schottky-Barrier Single-/ Double-Diodes Schottky-Barrier Einzel-/ Doppel-Dioden für die Oberflächenmontage Version 2005-01-20 Power dissipation Verlustleistung 1.1 2.9 ±0.1 0.4 Type Code 1.3 ±0.1


    Original     		BAS40 OT-23 O-236) BAS40-series BAS40-05 BAS40-04 BAS40-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-17 1.1 2.9 ±0.1 0.4 2.5 ±0.1 Type Code 1.3 max 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2 Power dissipation Verlustleistung


    Original     		BAS35 OT-23 O-236) PDF

    Untitled

    Abstract: No abstract text available
    Text: BAS35 BAS35 Surface mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2005-02-01 0.4 Power dissipation Verlustleistung 1.1 2.9 ±0.1 2 .5 ± 0 .1 Type Code 1 .3 m ax 3 2 1 1.9 Dimensions - Maße [mm] 1 = K1 2 = K2 3 = A1/A2


    Original     		BAS35 OT-23 O-236) PDF

    BAS31

    Abstract: BAS35 doppeldiode
    Text: BAS31 … BAS35 BAS31 … BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2009-11-26 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


    Original     		BAS31 BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 doppeldiode PDF

    BAS31

    Abstract: BAS35
    Text: BAS31, BAS35 BAS31, BAS35 Surface Mount Small Signal Dual Diodes Kleinsignal-Doppel-Dioden für die Oberflächenmontage Version 2011-10-11 1.1 2.9 ±0.1 0.4 1.3 2.5 ±0.1 max 3 Type Code 2 1 Power dissipation – Verlustleistung 350 mW Repetitive peak reverse voltage


    Original     		BAS31, BAS35 OT-23 O-236) UL94V-0 BAS31 BAS35 PDF

    efd-15 transformer

    Abstract: A7000 B66414-B1008-D1 B66413 B66413-G-X149 B66413-G-X187 B66413-U100-K187 B66413-U160-L187 B66414B6008T002 B66413U160L187
    Text: EFD/EV/DE Cores Series/Type: EFD 15/8/5 The following products presented in this data sheet are being withdrawn. Ordering Code B66414B6008T002 Substitute Product Date of Withdrawal 2003-08-08 Deadline Last Orders 2004-02-29 Last Shipments 2004-08-31 For further information please contact your nearest EPCOS sales office, which will also support


    Original     		B66414B6008T002 B66413 efd-15 transformer A7000 B66414-B1008-D1 B66413 B66413-G-X149 B66413-G-X187 B66413-U100-K187 B66413-U160-L187 B66414B6008T002 B66413U160L187 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si5482DU Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.015 at VGS = 10 V 12 0.0175 at VGS = 4.5 V 12 Qg (Typ.) 16 nC PowerPAK ChipFET Single 1 D AE XXX 4 Lot Traceability and Date Code D D • Load Switch, PA Switch, and Battery Switch


    Original     		Si5482DU Si5482DU-T1-GE3 11-Mar-11 PDF

    B66319-G-X167

    Abstract: B66232A1114T1 B66319 B66319-G-X127 B66319-G-X130 B66232-B1010-D1 B66319GX167
    Text: E 30/15/7 Core B66319 ● E cores are supplied as single units Magnetic characteristics per set Σl/A le Ae Amin Ve = 1,12 mm–1 = 67 mm = 60 mm2 = 49 mm2 = 4 000 mm3 Approx. weight 22 g/set Ungapped Material AL value µe nH AL1min PV nH Ordering code W/set


    Original     		B66319 B66319-G-X130 B66319-G-X167 B66319-G-X127 B66319-G100-X1* B66319-G180-X1* 175ions B66232-A1114-T1 B66232-J1112-T1 B66232-A2010 B66319-G-X167 B66232A1114T1 B66319 B66319-G-X127 B66319-G-X130 B66232-B1010-D1 B66319GX167 PDF

    474 K5C capacitor

    Abstract: 104 K5C capacitor smd k77 RDE5C2A 224Z 100V X8G 100V 474 K1C capacitor K5C MURATA AEC-Q200 marking wk1
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.


    Original     		C49E-21 474 K5C capacitor 104 K5C capacitor smd k77 RDE5C2A 224Z 100V X8G 100V 474 K1C capacitor K5C MURATA AEC-Q200 marking wk1 PDF

    104k 630 capacitor

    Abstract: M.104 K5C smd k77 RDEF11H223Z0 224 K5C capacitor
    Text: C49E.pdf May.10,2011 Radial Lead Type Monolithic Ceramic Capacitors Cat.No.C49E-21 C49E.pdf May.10,2011 !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc.


    Original     		C49E-21 DC25V-DC100V) 104k 630 capacitor M.104 K5C smd k77 RDEF11H223Z0 224 K5C capacitor PDF

    474 K5C capacitor

    Abstract: 474 K1C capacitor 104 k7c smd k77 224k x7r 50 capacitor 104k 630 capacitor 105 K5C capacitor rde5c MK1C M.104 K5C
    Text: !Note • Please read rating and !CAUTION for storage, operating, rating, soldering, mounting and handling in this catalog to prevent smoking and/or burning, etc. • This catalog has only typical specifications because there is no space for detailed specifications. Therefore, please review our product specifications or consult the approval sheet for product specifications before ordering.


    Original     		C49E-21 DC250V DC450V DC630V 474 K5C capacitor 474 K1C capacitor 104 k7c smd k77 224k x7r 50 capacitor 104k 630 capacitor 105 K5C capacitor rde5c MK1C M.104 K5C PDF