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    K10A55D Price and Stock

    Toshiba America Electronic Components TK10A55D(STA4,Q,M)

    MOSFET N-CH 550V 10A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A55D(STA4,Q,M) Tube 1
    • 1 $2.42
    • 10 $2.42
    • 100 $2.42
    • 1000 $0.92875
    • 10000 $0.92875
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    Mouser Electronics TK10A55D(STA4,Q,M)
    • 1 $2.42
    • 10 $2.11
    • 100 $1.18
    • 1000 $0.928
    • 10000 $0.928
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    Toshiba America Electronic Components TK10A55D(STA4

    Trans MOSFET N-CH 550V 10A 3-Pin(3+Tab) TO-220SIS - Rail/Tube (Alt: TK10A55D(STA4,Q,M))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK10A55D(STA4 Tube 32 Weeks 50
    • 1 -
    • 10 -
    • 100 $1.10707
    • 1000 $1.00305
    • 10000 $1.00305
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    K10A55D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D

    K10A5

    Abstract: K10A55D
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D K10A5 K10A55D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K10A55D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.56 Ω (標準) : |Yfs| = 6.0 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2


    Original     		PDF TK10A55D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D