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    K10A5 Price and Stock

    Toshiba America Electronic Components TK10A50W,S5X

    X35 PB-F POWER MOSFET TRANSISTOR
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    DigiKey TK10A50W,S5X Tube 121 1
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    Mouser Electronics TK10A50W,S5X
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    TDK-Lambda Corporation HK10A-5-A

    AC/DC CONVERTER 5V 10W
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    Omnivision Technologies Inc OS02K10-A59A

    IMAGE SENSOR
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    Toshiba America Electronic Components TK10A55D(STA4,Q,M)

    MOSFET N-CH 550V 10A TO220SIS
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    DigiKey TK10A55D(STA4,Q,M) Tube 1
    • 1 $2.42
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    Mouser Electronics TK10A55D(STA4,Q,M)
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    • 100 $1.18
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    Toshiba America Electronic Components TK10A50D(STA4,Q,M)

    MOSFET N-CH 500V 10A TO220SIS
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    DigiKey TK10A50D(STA4,Q,M) Tube 1
    • 1 $1.72
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    • 1000 $0.765
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    Mouser Electronics TK10A50D(STA4,Q,M)
    • 1 $2.08
    • 10 $1.93
    • 100 $1.04
    • 1000 $0.899
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    EBV Elektronik TK10A50D(STA4,Q,M) 19 Weeks 50
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    K10A5 Datasheets Context Search

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    K10A50D

    Abstract: K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D
    Text: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		PDF TK10A50D SC-67 2-10U1B 20070701-JA K10A50D K10A50 TK10A50D VDD400 K*A50D toshiba K10A50D

    K10A50D

    Abstract: K10A50 TK10A50D K*A50D
    Text: K10A50D 東芝電界効果トランジスタ π-MOSⅦ シリコンNチャネルMOS形 K10A50D ○ スイッチングレギュレータ用 単位: mm z : RDS (ON) = 0.62 Ω (標準) オン抵抗が低い。 z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 5.0 S (標準)


    Original     		PDF TK10A50D SC-67 2-10U1B K10A50D K10A50 TK10A50D K*A50D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D

    toshiba K10A50D

    Abstract: k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D toshiba K10A50D k10a50d toshiba marking code transistor k10a50d transistor K10a50d k10a50d data TK10A50D K10A50 K10a50d Transistor K*A50D k10a

    K10A5

    Abstract: K10A55D
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D K10A5 K10A55D

    k10a50d

    Abstract: No abstract text available
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D k10a50d

    K10A50

    Abstract: K10A50D toshiba marking code transistor k10a50d
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba marking code transistor k10a50d

    K10A50

    Abstract: K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D
    Text: K10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)


    Original     		PDF TK10A50D K10A50 K10A50D toshiba K10A50D toshiba marking code transistor k10a50d K*A50D TK10A50D k10a50d data transistor K10a50d k10a *K10A50D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K10A55D スイッチングレギュレータ用 単位: mm : RDS (ON) = 0.56 Ω (標準) : |Yfs| = 6.0 S (標準) 順方向伝達アドミタンスが高い。 2.7 ± 0.2


    Original     		PDF TK10A55D

    Untitled

    Abstract: No abstract text available
    Text: K10A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K10A55D Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.56 Ω(typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


    Original     		PDF TK10A55D