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    TK40A10J1

    Abstract: K40A10J
    Text: K40A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K40A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 90 S (標準)


    Original     		PDF TK40A10J1 SC-67 2-10U1B TK40A10J1 K40A10J

    K40A10J

    Abstract: k40a10 K40A
    Text: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		PDF TK40A10J1 K40A10J k40a10 K40A

    TK40A10J1

    Abstract: No abstract text available
    Text: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		PDF TK40A10J1 TK40A10J1