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    K40A10 Search Results

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    K40A10 Price and Stock

    Toshiba America Electronic Components TK40A10N1,S4X

    MOSFET N-CH 100V 40A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK40A10N1,S4X Tube 26 1
    • 1 $2.51
    • 10 $2.51
    • 100 $2.51
    • 1000 $0.81873
    • 10000 $0.74625
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    Mouser Electronics TK40A10N1,S4X 64
    • 1 $2.24
    • 10 $2.02
    • 100 $1.09
    • 1000 $0.746
    • 10000 $0.746
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    Toshiba America Electronic Components TK40A10N1

    Trans MOSFET N-CH 100V 90A 3-Pin TO-220SIS - Rail/Tube (Alt: TK40A10N1,S4X)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK40A10N1 Tube 16 Weeks 50
    • 1 -
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    • 100 $0.88953
    • 1000 $0.80595
    • 10000 $0.80595
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    Vishay Intertechnologies VS-43CTQ100STRL-M3

    Schottky Diodes & Rectifiers Schottky - D2PAK-e3
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    TTI VS-43CTQ100STRL-M3 Reel 13,600 800
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    • 1000 $0.9
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    Vishay Intertechnologies VS-43CTQ100S-M3

    Schottky Diodes & Rectifiers Schottky - D2PAK-e3
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    TTI VS-43CTQ100S-M3 Tube 97 3
    • 1 -
    • 10 $1.3
    • 100 $1.18
    • 1000 $0.94
    • 10000 $0.94
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    Vishay Intertechnologies VS-43CTQ100SHM3

    Schottky Diodes & Rectifiers Schottky - D2PAK-e3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI VS-43CTQ100SHM3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.25
    • 10000 $1.25
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    K40A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K40A10K3

    Abstract: TK40A10K3
    Text: K40A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K40A10K3 スイッチングレギュレーター用 単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 80 S (標準)


    Original     		PDF TK40A10K3 SC-67 2-10U1B K40A10K3 TK40A10K3

    TK40A10J1

    Abstract: K40A10J
    Text: K40A10J1 東芝電界効果トランジスタ シリコンNチャネルMOS形 超高速U-MOSⅢ K40A10J1 スイッチングレギュレーター用 単位: mm z ゲート入力電荷量が小さい。 : Qg= 76 nC (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 90 S (標準)


    Original     		PDF TK40A10J1 SC-67 2-10U1B TK40A10J1 K40A10J

    K40A10J

    Abstract: k40a10 K40A
    Text: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		PDF TK40A10J1 K40A10J k40a10 K40A

    TK40A10J1

    Abstract: No abstract text available
    Text: K40A10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ K40A10J1 Switching Regulator Applications Unit: mm • Small gate charge: Qg = 76nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) •


    Original     		PDF TK40A10J1 TK40A10J1

    K40A10K3

    Abstract: TK40A10K3 k40a10
    Text: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		PDF TK40A10K3 K40A10K3 TK40A10K3 k40a10

    Untitled

    Abstract: No abstract text available
    Text: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		PDF TK40A10K3 137led