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    K40A10K3

    Abstract: TK40A10K3
    Text: K40A10K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSⅣ K40A10K3 スイッチングレギュレーター用 単位: mm : RDS (ON) = 11.5 mΩ (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 80 S (標準)


    Original     		PDF TK40A10K3 SC-67 2-10U1B K40A10K3 TK40A10K3

    K40A10K3

    Abstract: TK40A10K3 k40a10
    Text: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSⅣ K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		PDF TK40A10K3 K40A10K3 TK40A10K3 k40a10

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    Abstract: No abstract text available
    Text: K40A10K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS K40A10K3 Switching Regulator Application • Unit: mm Low drain-source ON resistance: RDS (ON) = 11.5 mΩ (typ.) • High forward transfer admittance: |Yfs| = 80 S • Low leakage current: IDSS = 10 A (max) (VDS = 100 V)


    Original     		PDF TK40A10K3 137led