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    K4F661611B Search Results

    K4F661611B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4F661611B-TC Samsung Electronics 4M x 16-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF

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    K4F641611B-TC

    Abstract: K4F661611B-TC
    Text: K4F661611B,K4F641611B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45,- 50 or- 60) are optional features of this family. All of this


    Original     		PDF K4F661611B K4F641611B 16bit 4Mx16 400mil K4F641611B-TC K4F661611B-TC

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364C040 8 4BT0-C Buffered 4Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364C040(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M364C040 4Mx64 4Mx16 4Mx16, 4Mx64bits 100Min

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M364C080 8 4BT0-C Buffered 8Mx64 DIMM (4Mx16 base) Revision 0.1 June 1998 DRAM MODULE M364C080(8)4BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M364C080 8Mx64 4Mx16 4Mx16, 4Mx64bits 000DIA±