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    K4S510832 Price and Stock

    Samsung Semiconductor K4S510832M-TC75000

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    Bristol Electronics K4S510832M-TC75000 8
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    Samsung Semiconductor K4S510832MTC75

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    Samsung Semiconductor K4S510832D-UC75

    IC,SDRAM,4X16MX8,CMOS,TSOP,54PIN,PLASTIC
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    Quest Components K4S510832D-UC75 51
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    Others K4S510832C-KL75

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    K4S510832 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S510832B-CL75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S510832B-TC75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S510832B-TCL75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S510832B-UC75 Samsung Electronics 512Mb B-die SDRAM Specification Original PDF
    K4S510832M Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S510832M-TC1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TC/TL75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL1H Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL1L Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S510832M-TL75 Samsung Electronics 16M x 8-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF

    K4S510832 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,


    Original     		PDF K4S510832B 512Mbit

    RA12

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations


    Original     		PDF K4S510832B 512Mbit A10/AP RA12

    K4S510832M

    Abstract: RA12
    Text: Preliminary CMOS SDRAM K4S510832M 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Dec. 2001 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Dec. 2001 K4S510832M Preliminary CMOS SDRAM


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    k4s510832c

    Abstract: K4S510832C-KL
    Text: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 Samsung shall not offer for sale or sell either directly or through and third-party proxy, and DRAM memory products that include "Multi-Die Plastic DRAM" for use as components in general and scientific computers such as, by way of example, mainframes, servers, work stations


    Original     		PDF K4S510832C 512Mbit A10/AP k4s510832c K4S510832C-KL

    K4S510832D

    Abstract: K4S510432D k4s511632d K4S511632D-UC
    Text: K4S510432D K4S510832D K4S511632D Synchronous DRAM 512Mb D-die SDRAM Specification 54 TSOP-II with Lead-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4S510432D K4S510832D K4S511632D 512Mb A10/AP k4s511632d K4S511632D-UC

    Untitled

    Abstract: No abstract text available
    Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		PDF K4S510832B 512Mbit

    K4S510832C

    Abstract: K4S510832 K4S510832C-KL
    Text: K4S510832C CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Nov. 2001 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as


    Original     		PDF K4S510832C 512Mbit K4S510832C K4S510832 K4S510832C-KL

    K4S510832M

    Abstract: RA12
    Text: K4S510832M CMOS SDRAM 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May. 2002 Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May. 2002 K4S510832M CMOS SDRAM Revision History Revision 0.0 Mar. 2001


    Original     		PDF K4S510832M 512Mbit K4S510832M A10/AP RA12

    54-TSOP

    Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
    Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004


    Original     		PDF 256MB, 512MB, 168pin 512Mb 62/72-bit 54-TSOP K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A

    M377S2953MT3

    Abstract: M377S2953MT3-C1H M377S2953MT3-C1L
    Text: preliminary PC100 Registered DIMM M377S2953MT3 M377S2953MT3 SDRAM DIMM Intel 1.2 ver Base 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M377S2953MT3 is a 128M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M377S2953MT3 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC100 M377S2953MT3 M377S2953MT3 128Mx72 64Mx8, 64Mx8 400mil 18bits M377S2953MT3-C1H M377S2953MT3-C1L

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    Untitled

    Abstract: No abstract text available
    Text: PC133/PC100 SODIMM M464S6453DKS M464S6453DKS SDRAM SODIMM 64Mx64 SDRAM SODIMM based on 64Mx8, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M464S6453DKS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M464S6453DKS M464S6453DKS 64Mx64 64Mx8, 400mil 144-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous


    Original     		PDF M374S2953MTS M374S2953MTS PC133/PC100 128Mx72 64Mx8, 400mil 168-pin

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    b1a12

    Abstract: K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832
    Text: 512MB, 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb B-die with 72-bit ECC Revision 1.0 January 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 January 2004


    Original     		PDF 512MB, 168pin 512Mb 72-bit M390S6553BT1-C7A 512MB b1a12 K4S1G0632B PC133 SDRAM registered DIMM 512MB samsung M390S2950BTU-C7A M390S2953BT1-C7A M390S5658BT1-C7A M390S5658BTU-C7A M390S6553BT1-C7A M390S6553BTU-C7A K4S510832

    M464S6453BK0-L1H

    Abstract: No abstract text available
    Text: M464S6453BK0 PC100/PC133 512MB SODIMM Revision History Revision 0.0 Nov. 2000 Revision 0.1 (Jan. 2001) • Correted column address information in PIN CONFIGURATION DESCRIPTION. C ’ A11’is deleted • Defined the input capacitance in CAPACITANCE. • Redefined the ICC* in DC CHARACTERISTICS.


    Original     		PDF M464S6453BK0 PC100/PC133 512MB M464S6453BK0 64Mx64 64Mx8, 64Mx8 M464S6453BK0-L1H

    Samsung 16M SDRAM B-die

    Abstract: K4S510432B-TC K4S511632B
    Text: SDRAM 512Mb B-die x4, x8, x16 CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.0 July, 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.0 July, 2003 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		PDF 512Mb 16Bit A10/AP Samsung 16M SDRAM B-die K4S510432B-TC K4S511632B

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    b1a12

    Abstract: B1A10 K4S1G0632D K4S510832d K4S1G0632 B1A0
    Text: 1GB, 2GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 512Mb D-die 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF 168pin 512Mb medic250 K4S1G0632D 256Mx4 PC133 b1a12 B1A10 K4S510832d K4S1G0632 B1A0

    K4S510

    Abstract: M374S2953MTS M374S2953MTS-C1H M374S2953MTS-C75
    Text: Preliminary PC133/PC100 Unbuffered DIMM M374S2953MTS M374S2953MTS SDRAM DIMM 128Mx72 SDRAM DIMM with ECC based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE • Performance range The Samsung M374S2953MTS is a 128M bit x 72 Synchronous


    Original     		PDF PC133/PC100 M374S2953MTS M374S2953MTS 128Mx72 64Mx8, 400mil 168-pin K4S510 M374S2953MTS-C1H M374S2953MTS-C75

    Samsung M464S6453CKS-L7A

    Abstract: m464s64* samsung M464S6453CKS K4S510832C
    Text: M464S6453CKS PC133/PC100 SODIMM Revision History Revision 0.0 Sept. 2001 Revision 0.1 (Feb. 2002) - Typo in SPD 127byte corrected This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited


    Original     		PDF M464S6453CKS PC133/PC100 127byte 100MHz PC100 PC66/PC100 Samsung M464S6453CKS-L7A m464s64* samsung M464S6453CKS K4S510832C

    K4S511632B-UC75

    Abstract: K4S511632B-UL75 K4S511632B K4S510432B-UC
    Text: CMOS SDRAM SDRAM 512Mb B-die x4, x8, x16 512Mb B-die SDRAM Specification 54 TSOP-II with Pb-Free (RoHS compliant) Revision 1.1 August 2004 * Samsung Electronics reserves the right to change products or specification without notice. Revision. 1.1 August 2004


    Original     		PDF 512Mb 16Bit A10/AP K4S511632B-UC75 K4S511632B-UL75 K4S511632B K4S510432B-UC

    M390S2953MT1

    Abstract: M390S2953MT1-C75 PC133 registered reference design
    Text: preliminary PC133 Registered DIMM M390S2953MT1 M390S2953MT1 SDRAM DIMM 128Mx72 SDRAM DIMM with PLL & Register based on 64Mx8, 4Banks 8K Ref., 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M390S2953MT1 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S2953MT1 consists of eighteen CMOS 64Mx8 bit


    Original     		PDF PC133 M390S2953MT1 M390S2953MT1 128Mx72 64Mx8, 64Mx8 400mil 18bits M390S2953MT1-C75 PC133 registered reference design

    M366S2953MTS

    Abstract: M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H
    Text: Preliminary PC133/PC100 Unbuffered DIMM M366S2953MTS M366S2953MTS SDRAM DIMM 128Mx64 SDRAM DIMM based on 64Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S2953MTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    Original     		PDF PC133/PC100 M366S2953MTS M366S2953MTS 128Mx64 64Mx8, 400mil 168-pin M366S2953MTS-C1L M366S2953MTS-C75 M366S3953MTS-C1H