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    K4S5604 Price and Stock

    Samsung Semiconductor K4S560432C-TC75

    SDRAM - 256MBit (64M x 4) - 3.3V - 54-Pin TSOP-II
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    Onlinecomponents.com K4S560432C-TC75 299
    • 1 $36.86
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    Bristol Electronics K4S560432C-TC75 8
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    Quest Components K4S560432C-TC75 72
    • 1 $14.94
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    • 100 $8.964
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    K4S560432C-TC75 12
    • 1 $16.8075
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    K4S560432C-TC75 6
    • 1 $14.0625
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    Samsung Semiconductor K4S560432H-TC75

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    Bristol Electronics K4S560432H-TC75 2,545
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    Samsung Semiconductor K4S560432D-TC75

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    Bristol Electronics K4S560432D-TC75 2,000
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    Quest Components K4S560432D-TC75 1,600
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    K4S560432D-TC75 56
    • 1 $24
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    K4S560432D-TC75 16
    • 1 $15.6
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    Samsung Semiconductor K4S560432B-TC75

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    Bristol Electronics K4S560432B-TC75 1,264
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    Quest Components K4S560432B-TC75 59
    • 1 $13.104
    • 10 $11.648
    • 100 $10.7744
    • 1000 $10.7744
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    Samsung Semiconductor K4S560432A-TC1L

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    Bristol Electronics K4S560432A-TC1L 1,000
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    Quest Components K4S560432A-TC1L 800
    • 1 $96.48
    • 10 $96.48
    • 100 $74.772
    • 1000 $72.36
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    K4S5604 Datasheets (41)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S560432A Samsung Electronics 256Mbit SDRAM 16M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560432A-TC/L1H Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S560432A-TC/L1L Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    K4S560432A-TC/L75 Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S560432A-TC/L80 Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF
    K4S560432B Samsung Electronics 256Mbit SDRAM 16M x 4-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S560432B-TC/L1H Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S560432B-TC/L1L Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S560432B-TC/L75 Samsung Electronics 16M x 4-Bit x 4 banks synchronous DRAM LVTTL. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S560432C Samsung Electronics K4S560432C 16Mx4-Bitx4Banks Synchronous DRAM, Organization = 64Mx4, Bank/ Interface = 4B/LVTTL, Refresh = 8K/64ms, Speed = 7C,75,1H,1L, Package = 54TSOP2, Power = B,i,p,e,n, Production Status = Mass Production, Comments = ICC6=800uA Original PDF
    K4S560432C-TC1H Samsung Electronics 16M x 4 Bit x 4 Banks Synchronous DRAM Original PDF
    K4S560432D Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S560432D-NC1H Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NC1L Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NC75 Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NC7C Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NL1H Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NL1L Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NL75 Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF
    K4S560432D-NL7C Samsung Electronics 256Mbit SDRAM, LVTTL, 133MHz Original PDF

    K4S5604 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    K4S560432B

    Abstract: RA12
    Text: K4S560432B CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 May. 2000 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 May.2000 K4S560432B CMOS SDRAM Revision 0.1 March 10, 2000


    Original     		K4S560432B 256Mbit 133MHz" A10/AP K4S560432B RA12 PDF

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Text: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604 PDF

    K4S561632J-UC

    Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u PDF

    K4S561632J

    Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC PDF

    K4S560432D

    Abstract: RA12
    Text: K4S560432D CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Jan. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2002 K4S560432D CMOS SDRAM Revision History Revision 0.0 Jan. , 2002


    Original     		K4S560432D 256Mbit K4S560432D 10/AP RA12 PDF

    K4S561632J

    Abstract: K4S561632J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J K4S561632J-UC PDF

    K4S560432C

    Abstract: RA12
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM Super low power 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S560432C CMOS SDRAM Revision History


    Original     		K4S560432C 256Mbit 100MHz A10/AP K4S560432C RA12 PDF

    Synchronous DRAM and Samsung

    Abstract: No abstract text available
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM Industrial Temp Support 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept.2001 K4S560432C CMOS SDRAM


    Original     		K4S560432C 256Mbit 100MHz A10/AP Synchronous DRAM and Samsung PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560432C CMOS SDRAM


    Original     		K4S560432C 256Mbit 100MHz A10/AP PDF

    Untitled

    Abstract: No abstract text available
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K4S560432J K4S560832J K4S561632J 256Mb A10/AP PDF

    K4S560432C

    Abstract: RA12
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.1 Sept. 2001 K4S560432C CMOS SDRAM Revision History


    Original     		K4S560432C 256Mbit 100MHz 10/AP K4S560432C RA12 PDF

    K4S560432D

    Abstract: RA12
    Text: K4S560432D CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 1.1 May. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 May. 2003 K4S560432D CMOS SDRAM Revision History Revision 0.0 Jan. , 2002


    Original     		K4S560432D 256Mbit K4S560432D A10/AP RA12 PDF

    CLK16M

    Abstract: No abstract text available
    Text: K4S560432D CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 May. 2002 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 May. 2002 K4S560432D CMOS SDRAM Revision History Revision 0.0 May. , 2002


    Original     		K4S560432D 256Mbit K4S560432D A10/AP CLK16M PDF

    k4s560432c

    Abstract: No abstract text available
    Text: K4S560432C CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Mar. 2001 K4S560432C CMOS SDRAM Revision History Revision 0.0 Mar. 06, 2001


    Original     		K4S560432C 256Mbit A10/AP k4s560432c PDF

    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm PDF

    b1a12

    Abstract: M390S6450DTU-C7A M390S6450DTU M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design
    Text: M390S6450DTU PC133/PC100 Low Profile Registered DIMM M390S6450DTU SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DTU is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung M390S6450DTU consists of eighteen CMOS 64Mx4 bit


    Original     		M390S6450DTU PC133/PC100 M390S6450DTU 64Mx72 64Mx4, 64Mx4 400mil 18bits b1a12 M390S6450DTU-C7A M390S6450DTU-C1H M390S6450DTU-C1L M390S6450DTU-C7C PC133 registered reference design PDF

    TC5118160

    Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
    Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256


    Original     		256Kx4 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256 HY531000 HY534256 MT4C1024 TC5118160 msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260 PDF

    b1a12

    Abstract: PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A
    Text: 256MB, 512MB, 1GB Registered DIMM SDRAM SDRAM Registered Module 168pin Registered Module based on 256Mb E-die with 72-bit ECC Revision 1.4 May 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.4 May 2004


    Original     		256MB, 512MB, 168pin 256Mb 72-bit K4S510632E b1a12 PC133 SDRAM registered DIMM 512MB samsung pc133 sdram 512mb ECC unbuffered K4S560832E M390S2858ET1-C7A M390S2858ETU-C7A M390S3253ET1-C7A M390S3253ETU-C7A M390S6450ET1-C7A M390S6450ETU-C7A PDF

    M390S6450DT1-C7A

    Abstract: 0ba0 PC133 registered reference design
    Text: M390S6450DT1 PC133 Registered DIMM M390S6450DT1 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung M390S6450DT1 is a 64M bit x 72 Synchronous


    Original     		M390S6450DT1 M390S6450DT1 PC133 64Mx72 64Mx4, 64Mx4 400mil 18-bits M390S6450DT1-C7A 0ba0 PC133 registered reference design PDF

    Untitled

    Abstract: No abstract text available
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.2 June. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 June. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM Revision History


    Original     		256Mb 166MHz 16Bit A10/AP PDF

    samsung k4s561632e

    Abstract: CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E
    Text: SDRAM 256Mb E-die x4, x8, x16 CMOS SDRAM 256Mb E-die SDRAM Specification Revision 1.3 September. 2003 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.3 September. 2003 SDRAM 256Mb E-die (x4, x8, x16) CMOS SDRAM


    Original     		256Mb 166MHz 16Bit A10/AP samsung k4s561632e CMOS SDRAM K4S560432E K4S560432E-TC K4S560832E K4S561632E PDF

    K4S560432B-TC75

    Abstract: M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung
    Text: SERIAL PRESENCE DETECT PC133 Registered DIMM PC133 Registered SDRAM DIMM 168pin Type SPD Specification REV. 0 May. 2000 REV. 0 May. 2000 SERIAL PRESENCE DETECT PC133 Registered DIMM M390S3253BT1-C75 •Organization : 32MX72 •Composition : 32MX8 * 9ea •Used component part # : K4S560832B-TC75


    Original     		PC133 168pin) M390S3253BT1-C75 32MX72 32MX8 K4S560832B-TC75 8K/64ms 128bytes K4S560432B-TC75 M390S6450BT1-C75 32MX72 64MX4 PC133 SDRAM registered DIMM 512MB samsung PDF

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B PDF

    K4S641632k uc60

    Abstract: K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N
    Text: General Information SDRAM SDRAM Product Guide November 2007 Memory Division November 2007 General Information SDRAM A. SDRAM Component Ordering Information 1 2 3 4 5 6 7 8 9 10 11 K 4 S X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM


    Original     		4K/64ms 128Mb, 256Mb, 8K/64ms 512Mb, 80TYP 25TYP K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 K4S281632K M390S6450HUU K4S561632J K4S641632N PDF