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    K4S561 Price and Stock

    Samsung Semiconductor K4S561633C-RL75

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    Bristol Electronics K4S561633C-RL75 441 1
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    • 1000 $3.6736
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    Samsung Semiconductor K4S56163PF-BG75

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    Bristol Electronics K4S56163PF-BG75 366
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    Samsung Semiconductor K4S561633C-RN1L

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    Bristol Electronics K4S561633C-RN1L 357
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    Samsung Semiconductor K4S561632J-UC60

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    Samsung Semiconductor K4S561632H-UC75

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    Bristol Electronics K4S561632H-UC75 102
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    K4S561 Datasheets (90)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K4S561632A Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S561632A-TC/L1H Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S561632A-TC/L1L Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632A-TC/L75 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632A-TC/L80 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Synchronous DRAM LVTTL Original PDF
    K4S561632B-TC/L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC-L Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TC/L1H Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL. Original PDF
    K4S561632B-TC/L1L Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L75 Samsung Electronics 4M x 16-Bit x 4 banks synchronous DRAM. 256 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL. Original PDF
    K4S561632B-TC/L, TI/P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632B-TI-P Samsung Electronics 4MB x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632C Samsung Electronics K4S561632C 4M x 16-Bit x 4 Banks Synchronous DRAM, Organization = 16Mx16, Bank/ Interface = 4B/LVTTL, Refresh = 8K/64ms, Speed = 60,7C,75,1H,1L, Package = 54TSOP2, Power = B,i,p,e,n, Production Status = Mass Production, Comments = ICC6=800uA Original PDF
    K4S561632C-L60 Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-L7C Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-TC Samsung Electronics 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM Original PDF
    K4S561632C-TC75 Samsung Electronics IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC Original PDF
    K4S561632D Samsung Electronics 4M x 16-Bit x 4 Banks Synchronous DRAM Data Sheet Original PDF
    K4S561632D Samsung Electronics 256Mbit SDRAM 4M x 16-Bit x 4 Banks Original PDF

    K4S561 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    K4S56163LC

    Abstract: No abstract text available
    Text: K4S56163LC-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V) Revision 1.4 December. 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC

    K4S561633C

    Abstract: No abstract text available
    Text: K4S561633C-R B L/N/P CMOS SDRAM 16Mx16 SDRAM 54CSP (VDD/VDDQ 3.0V/3.0V or 3.3V/3.3V) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S561633C-R(B)L/N/P CMOS SDRAM 4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply.


    Original     		PDF K4S561633C-R 16Mx16 54CSP 16Bit K4S561633C

    K4S561633F

    Abstract: K4S561633F-X
    Text: K4S561633F - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S561633F is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		PDF K4S561633F 16Bit 54BOC K4S561633F-X

    K4S561632C-TC/L75

    Abstract: K4S561632C K4S561632C-TC K4S561632C-TC/L7C
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Sept. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC/L75 K4S561632C K4S561632C-TC K4S561632C-TC/L7C

    K4S561633C

    Abstract: K4S561633C-RL
    Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 0.7 December 2001 Rev. 0.7 Dec. 2001 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).


    Original     		PDF K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C

    K4S561632C

    Abstract: No abstract text available
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Extended Temp Support 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.1 Sept. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev.0.1 Sept.2001 K4S561632C CMOS SDRAM


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C

    Untitled

    Abstract: No abstract text available
    Text: Mobile SDRAM VDD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RF(R) CMOS SDRAM 16Mx16 Mobile SDRAM (TCSR & PASR option support) Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 Mobile SDRAM (VDD 2.5V, V DDQ 1.8V & 2.5V) K4S56163LC-RF(R) CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target)


    Original     		PDF K4S56163LC-RF 16Mx16 256Mb

    K4S561633C-RLN

    Abstract: No abstract text available
    Text: K4S561633C-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP (V DD/V DDQ 3.0V/3.0V & 3.3V/3.3V) Revision 1.0 February 2001 Rev. 1.0 Feb. 2002 K4S561633C-RL(N) CMOS SDRAM Revision History Revision 0.0 (April 4. 2001, Target) • First generation of 256Mb Low Power SDRAM without special function(V DD 3.0V, VDDQ 3.0V).


    Original     		PDF K4S561633C-RL 16Mx16 54CSP 256Mb K4S561633C-RLN

    samsung capacitance year code

    Abstract: No abstract text available
    Text: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S561632J 256Mb A10/AP samsung capacitance year code

    K4S561632N

    Abstract: K4S561632N-LC K4S560832N-LC K4S560832N K4S560432N-LC K4S560432N K4S560832Nlc K4S5604
    Text: Rev. 1.0, Apr. 2010 K4S560432N K4S560832N K4S561632N 256Mb N-die SDRAM 54TSOP II with Lead-Free & Halogen-Free (RoHS compliant) datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4S560432N K4S560832N K4S561632N 54TSOP 256Mb A10/AP K4S561632N K4S561632N-LC K4S560832N-LC K4S560432N-LC K4S560832Nlc K4S5604

    K4S56163LC

    Abstract: No abstract text available
    Text: K4S56163LC-R B F/R CMOS SDRAM 16Mx16 Mobile SDRAM 54CSP (VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR) Revision 1.4 December 2002 Rev. 1.4 Dec. 2002 K4S56163LC-R(B)F/R CMOS SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54CSP FEATURES GENERAL DESCRIPTION • 2.5V power supply.


    Original     		PDF K4S56163LC-R 16Mx16 54CSP 16Bit K4S56163LC

    Untitled

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S56163LC-RL/N/P 16Mx16 SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RL/N/P CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).


    Original     		PDF K4S56163LC-RL/N/P 16Mx16 54CSP 256Mb 54CSP 95xVDDQ -75/-1L

    K4S561632C-TC75

    Abstract: K4S561632C-TC1L
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 Mar. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.2 Mar. 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC75 K4S561632C-TC1L

    Untitled

    Abstract: No abstract text available
    Text: CMOS SDRAM K4S56163LC-RG/S 16Mx16 Mobile SDRAM 54CSP VDD/VDDQ 2.5V/1.8V or 2.5V/2.5V, TCSR & PASR Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 K4S56163LC-RG/S CMOS SDRAM Revision History Revision 0.0 (April. 2001, Target) • First generation of 256Mb Low Power SDRAM having TCSR option. (V DD 2.5V, V DDQ 1.8V).


    Original     		PDF K4S56163LC-RG/S 16Mx16 54CSP 256Mb

    K4S561632C-TC

    Abstract: K4S561632CTC k4s561632c
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 Jun 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 Jun 2001 K4S561632C CMOS SDRAM Revision History Revision 0.1 Feb. 15, 2001


    Original     		PDF K4S561632C 256Mbit 16bit A10/AP K4S561632C-TC K4S561632CTC k4s561632c

    Untitled

    Abstract: No abstract text available
    Text: V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL N CMOS SDRAM 16Mx16 SDRAM 54CSP Revision 1.0 February 2002 Rev. 1.0 Feb. 2002 V DD 2.5V, V DDQ 1.8V & 2.5V K4S56163LC-RL(N) CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).


    Original     		PDF K4S56163LC-RL 16Mx16 54CSP 256Mb 54CSP 95xVDDQ -75/-1L

    K4S561632C

    Abstract: K4S561632C-TB75 k4s561632c-tb7c 2CLK
    Text: K4S561632C CMOS SDRAM 256Mbit SDRAM Super low power 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.5 Nov. 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.5 Nov. 2001 K4S561632C CMOS SDRAM Revision History


    Original     		PDF K4S561632C 256Mbit 16bit 100MHz A10/AP K4S561632C K4S561632C-TB75 k4s561632c-tb7c 2CLK

    K4S561632J-UC

    Abstract: K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J-UC K4S561632J K4S561632J-UL K4S561632J-U K4S561632JUC K4S560832J K4S560832J-UC k4s560832j-u

    K4S561632J

    Abstract: K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616
    Text: Industrial Synchronous DRAM K4S561632J 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free RoHS compliant Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4S561632J 256Mb A10/AP K4S561632J K4S56163 K4S561632J-UI/P60 K4S561632J-UI samsung cmos dram 4m x 4 k4s5616

    K4S561632J

    Abstract: k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC
    Text: K4S560432J K4S560832J K4S561632J Synchronous DRAM 256Mb J-die SDRAM Specification 54 TSOP-II with Pb-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S560432J K4S560832J K4S561632J 256Mb A10/AP K4S561632J k4s560832J K4S561632J-UC K4S560432J k4s561632j-uc/l75 K4S561632J-UL K4S561632 K4S560832J-UC

    K4S561632B

    Abstract: No abstract text available
    Text: Preliminary K4S561632B-TI P CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 January 2001 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.0 Jan. 2001 Preliminary K4S561632B-TI(P)


    Original     		PDF K4S561632B-TI 256Mbit 16bit 256Mb K4S561632B

    K4S56163LC

    Abstract: No abstract text available
    Text: VDD 2.5V, VDDQ 1.8V & 2.5V K4S56163LC-RL(N) CMOS SDRAM 16Mx16 SDRAM 54CSP Revision 0.1 November 2001 Rev. 0.1 Nov. 2001 (VDD 2.5V, VDDQ 1.8V & 2.5V) K4S56163LC-RL(N) CMOS SDRAM Revision History Revision 0.0 (Oct. 2001, Preliminary) • First generation of 256Mb SDRAM 54CSP datasheet without PASR and TCSR function (V DD 2.5V, VDDQ 1.8V & 2.5V).


    Original     		PDF K4S56163LC-RL 16Mx16 54CSP 256Mb 54CSP 16Bit K4S56163LC

    Untitled

    Abstract: No abstract text available
    Text: K4S56163LF - X Z E/N/G/C/L/F Mobile-SDRAM 4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S56163LF is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits,


    Original     		PDF K4S56163LF 16Bit 54BOC

    K4S561632H

    Abstract: K4S561632H-T samsung capacitance year code
    Text: Industrial Synchronous DRAM K4S561632H 256Mb H-die SDRAM Specification Industrial Temp. -40 to 85°C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K4S561632H 256Mb A10/AP K4S561632H K4S561632H-T samsung capacitance year code