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    Samsung Semiconductor K4T1G084QE-HCE6000

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    Quest Components K4T1G084QE-HCE6000 160
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    SMART Modular Technology Inc K4T1G084QE-HCE7

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    Samsung Semiconductor K4T1G084QE-HCF8

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    Chip 1 Exchange K4T1G084QE-HCF8 1,280
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    K4T1G084QE Datasheets Context Search

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    K4T1G164QE-HC

    Abstract: No abstract text available
    Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4T1G044QE K4T1G084QE K4T1G164QE 60FBGA 84FBGA 6-10per) 6-10per K4T1G164QE-HC

    K4T1G164QE

    Abstract: K4T1G084QE K4T1G164QE-HC DDR2-800 JESD79-2E
    Text: Rev. 1.11, Feb. 2010 K4T1G044QE K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T1G044QE K4T1G084QE K4T1G164QE 60FBGA/84FBGA 6-10per) 6-10per K4T1G164QE K4T1G084QE K4T1G164QE-HC DDR2-800 JESD79-2E

    Untitled

    Abstract: No abstract text available
    Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		PDF K4T1G044QE K4T1G084QE K4T1G164QE 60FBGA 84FBGA 6-10per) 6-10per

    M378T2863EHS-CE7

    Abstract: ddr2 module ecc DDR2-667 DDR2-800 1gb ddr2 800 serial presence detect M378T2863EHS
    Text: SERIAL PRESENCE DETECT M378T2863EHS-CE7/CF7/CE6 Organization : 128M x 64 Composition : 128M x 8 * 8ea Used component part # : K4T1G084QE-CE7/F7/E6 # of rows in module : 1 Row # of banks in component : 8 banks Feature : 30mm height & single sided component


    Original     		PDF M378T2863EHS-CE7/CF7/CE6 K4T1G084QE-CE7/F7/E6 8K/64ms DDR2-800 DDR2-667 128bytes 256bytes M378T2863EHS-CE7 ddr2 module ecc 1gb ddr2 800 serial presence detect M378T2863EHS

    k4t1g164qe

    Abstract: K4T1G164QE-HC TDS 3000 K4T1G084QE DDR2-800 JESD79-2E k4t1g084qe-hc K4T1G044QE-HC
    Text: Rev. 1.12, Sep. 2010 K4T1G044QE K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T1G044QE K4T1G084QE K4T1G164QE 60FBGA/84FBGA 6-10per) 6-10per k4t1g164qe K4T1G164QE-HC TDS 3000 K4T1G084QE DDR2-800 JESD79-2E k4t1g084qe-hc K4T1G044QE-HC

    k4t1g164qe

    Abstract: k4t1g164qe-hi IDD3PS
    Text: Rev. 1.3, Nov. 2009 K4T1G084QE K4T1G164QE 1Gb E-die DDR2 SDRAM Industrial 60FBGA/84FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K4T1G084QE K4T1G164QE 60FBGA/84FBGA 6-10per) 6-10per k4t1g164qe k4t1g164qe-hi IDD3PS

    K4T1G164QE-HCF8

    Abstract: K4T1G164QE K4T1G084QE-HCF8 K4T1G084QE k4t1g084qe-hcf K4T1G164QE-HC
    Text: K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2-1066 SDRAM Specification 60/84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4T1G084QE K4T1G164QE DDR2-1066 60/84FBGA 6-10per) K4T1G164QE-HCF8 K4T1G164QE K4T1G084QE-HCF8 K4T1G084QE k4t1g084qe-hcf K4T1G164QE-HC

    K4T1G164QE-HC

    Abstract: K4T1G084QE k4t1g084qe-hc K4T1G164QE E6 DDR2-800 JESD79-2E K4T1G164QE K4T1G044QE
    Text: K4T1G044QE K4T1G084QE K4T1G164QE DDR2 SDRAM 1Gb E-die DDR2 SDRAM Specification 60FBGA & 84FBGA with Lead-Free & Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF K4T1G044QE K4T1G084QE K4T1G164QE 60FBGA 84FBGA 6-10per) 6-10per K4T1G164QE-HC K4T1G084QE k4t1g084qe-hc K4T1G164QE E6 DDR2-800 JESD79-2E K4T1G164QE K4T1G044QE

    K4T1G164QF

    Abstract: 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC
    Text: Apr. 2010 DDR2 SDRAM Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF 68Ball 10MAX K4T1G164QF 1GB DDR2 4 banks K4T51083QI-HCE7 K4T51163QI K4T1G164QQ-HC k4t51083qi m470t5663 K4T1G164QE samsung ddr2 240pin 1gb K4T1G164QE-HC

    VL493T5663

    Abstract: VN0810 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 K4T1G084QE-HCE6
    Text: Product Specifications PART NO.: VL493T5663C-E6M/D5M/CCM REV: 1.3 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663C is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit


    Original     		PDF VL493T5663C-E6M/D5M/CCM 256Mx72 200-PIN VL493T5663C 128Mx8 25-bit 200-pin VN-081009 VL493T5663 VN0810 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 K4T1G084QE-HCE6

    DDR2-400

    Abstract: DDR2-533 DDR2-667 PC2-3200 PC2-5300
    Text: Product Specifications PART NO.: VL493T5663D-E6M/D5M/CCM-S1 REV: 1.0 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663D is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module consists of eighteen


    Original     		PDF VL493T5663D-E6M/D5M/CCM-S1 256Mx72 200-PIN VL493T5663D 128Mx8 25-bit 200-pin VN-081009 DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet Rev.1.0 16.11.2009 1GB DDR2 – SDRAM registered DIMM Features: 240 Pin RDIMM 1 SEP01G72J2BE1SA-25R 1 1GB PC2-6400 in FBGA Technique 1 1 RoHS compliant Options: 1 Frequency / Latency DDR2 800MHZ CL6 800MHZ CL5 667MHz CL5 533MHz CL4 1 Module densities


    Original     		PDF SEP01G72J2BE1SA-25R PC2-6400 800MHZ 667MHz 533MHz 1024MB D-12681

    PC2-5300F-555-11-B

    Abstract: SG5SD82N2G1CDDJSE 2rx8 pc2-4200u-444-12
    Text: SG5SD82N2G1CDDJUU February 5, 2009 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SD82N2G1CDDJHC 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-5300, DDR2-667-555, 30.35mm, Green Module (RoHS Compliant).


    Original     		PDF SG5SD82N2G1CDDJUU SG5SD82N2G1CDDJHC 256Mx72 240-pin 128Mx8 PC2-5300, DDR2-667-555, PC2-5300F-555-11-B_ AMB0680L4RJ8 HY5PS1G831CFP-Y5 PC2-5300F-555-11-B SG5SD82N2G1CDDJSE 2rx8 pc2-4200u-444-12

    k4B2G1646

    Abstract: K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q K4B2G16 K4B2G1646C-HQH9 K4T1G084QF k4s281632O
    Text: Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind.


    Original     		PDF

    K9F2G08U0B

    Abstract: K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B
    Text: Samsung Semiconductor, Inc. Product Selection Guide Memory and Storage January 2009 Samsung Semiconductor, Inc. Samsung offers the industry’s broadest memory portfolio and has maintained its leadership in memory technology for 16 straight years. Its DRAM, flash and SRAM


    Original     		PDF BR-09-ALL-001 K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 K9F4G08U0B K9WBG08U1M K9F1G08U0C-PCB0 K9G4G08U0B

    k4t1g164qe-hc

    Abstract: M470T5663EH3 K4T1G084QE-HC M470T2863EH3 M470T2864EH M470T2864EH3
    Text: SODIMM DDR2 SDRAM DDR2 Unbuffered SODIMM 200pin Unbuffered SODIMM based on 1Gb E-die 64-bit Non-ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 200pin 64-bit 60FBGA 84FBGA 64Mbx16 64Mx64 M470T6464EHS K4T1G164QE k4t1g164qe-hc M470T5663EH3 K4T1G084QE-HC M470T2863EH3 M470T2864EH M470T2864EH3

    H5PS1G83EFR-S5C

    Abstract: DDR2-800-555
    Text: SG1286UD212851UU April 10, 2009 Ordering Information Part Numbers Description Device Vendor SG1286UD212851HC 128Mx64 1GB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 128Mx8 Based, PC2-6400, DDR2-800-555, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant).


    Original     		PDF SG1286UD212851UU SG1286UD212851HC 128Mx64 240-pin 128Mx8 PC2-6400, DDR2-800-555, HY5PS1G831CFP-S5 SG1286UD212851HE H5PS1G83EFR-S5C DDR2-800-555

    m378t5663eh3

    Abstract: M378T2863EHS-CE7 M378T2863
    Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 64/72-bit 60FBGA 84FBGA K4T1G084QE 64Mbx16 64Mx64 M378T6464EHS K4T1G164QE m378t5663eh3 M378T2863EHS-CE7 M378T2863

    serial presence detect samsung 2010

    Abstract: M392T5663FB M392T5663FBA
    Text: Rev. 1.0, Oct. 2010 M392T2863FBA M392T5663FBA M392T5660FBA 240pin VLP Registered DIMM based on 1Gb F-die 60 FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF M392T2863FBA M392T5663FBA M392T5660FBA 240pin serial presence detect samsung 2010 M392T5663FB

    Untitled

    Abstract: No abstract text available
    Text: SG5SD82N2G1BGDJUU March 25, 2009 Ordering Information Part Numbers Description AMB Vendor Device Vendor SG5SD82N2G1BGDJHC 256Mx72 2GB , DDR2, 240-pin Fully Buffered DIMM, ECC, 128Mx8 Based, PC2-6400, DDR2-800-555, 30.35mm, Green Module (RoHS Compliant). Label:


    Original     		PDF SG5SD82N2G1BGDJUU SG5SD82N2G1BGDJHC 256Mx72 240-pin 128Mx8 PC2-6400, DDR2-800-555, PC2-6400F-555-11-R_ AMB0780L4RJ8 HY5PS1G831CFP-S5

    m378t5663eh3-ce7

    Abstract: M378T2863EHS-CE7 M378T5663EH3 M378T2863EHS k4t1g164qe M378T2863 DDR2 SDRAM ECC and Application Note
    Text: UDIMM DDR2 SDRAM DDR2 Unbuffered SDRAM MODULE 240pin Unbuffered Module based on 1Gb E-die 64/72-bit Non-ECC/ECC 60FBGA & 84FBGA with Lead-Free and Halogen-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE


    Original     		PDF 240pin 64/72-bit 60FBGA 84FBGA K4T1G084QE 64Mbx16 64Mx64 M378T6464EHS K4T1G164QE m378t5663eh3-ce7 M378T2863EHS-CE7 M378T5663EH3 M378T2863EHS k4t1g164qe M378T2863 DDR2 SDRAM ECC and Application Note

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL493T5663D-E6M/D5M/CCM-S1 REV: 1.0 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663D is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module consists of eighteen


    Original     		PDF VL493T5663D-E6M/D5M/CCM-S1 256Mx72 200-PIN VL493T5663D 128Mx8 25-bit 200-pin VN-081009

    Untitled

    Abstract: No abstract text available
    Text: Product Specifications PART NO.: VL493T5663C-E6M/D5M/CCM REV: 1.3 General Information 2GB 256Mx72 DDR2 SDRAM ECC REGISTERED SO-RDIMM 200-PIN Description The VL493T5663C is a 256Mx72 DDR2 SDRAM high density SO-RDIMM. This memory module is dual rank, consists of eighteen CMOS 128Mx8 bit with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit


    Original     		PDF VL493T5663C-E6M/D5M/CCM 256Mx72 200-PIN VL493T5663C 128Mx8 25-bit 200-pin VN-081009

    M393T5160CZ0-C

    Abstract: No abstract text available
    Text: Preliminary 1GB, 2GB, 4GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 1Gb C-die 72-bit ECC 60FBGA with Pb-Free 63FBGA with Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		PDF 240pin 72-bit 60FBGA 63FBGA M393T5160CZ0-C