K6A65D
Abstract: TK6A65D k6a65 TK6A
Text: K6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)
|
Original
|
TK6A65D
SC-67
2-10U1B
K6A65D
TK6A65D
k6a65
TK6A
|
PDF
|
K6A60D
Abstract: K6A60 TK6A60D
Text: K6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)
|
Original
|
TK6A60D
K6A60D
K6A60
TK6A60D
|
PDF
|
K6A65D
Abstract: tk6a65d tk6a65d equivalent k6a65 K6A65D data TK6A K6A6
Text: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)
|
Original
|
TK6A65D
K6A65D
tk6a65d
tk6a65d equivalent
k6a65
K6A65D data
TK6A
K6A6
|
PDF
|
k6a60d
Abstract: No abstract text available
Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)
|
Original
|
TK6A60D
k6a60d
|
PDF
|
Untitled
Abstract: No abstract text available
Text: A?E ,=-'475 4VVS<>AB< # : A 0<& <,9=4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY . !0 V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: 1?B 6M 0/* O , =L#`_$&^Ri *(-* " = +-(. 9 V 2 AIG6 ADL <6I: 8 =6G<: I@'MH,.1 V "MIG: B : 94 )U
|
Original
|
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?-'@ ,4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) + =L"`_#%^Ri V 2 AIG6 ADL <6I: 8 =6G<: O )'*+. " * X%eja ., _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E-'@ ,4? a 4VVS=>A # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - !0 V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) + =L"`_#%^Ri V 2 AIG6 ADL <6I: 8 =6G<: O )'*+. " * X%eja ., _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
|
Original
|
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
K6A65D
Abstract: tk6a65d k6a65
Text: K6A65D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A65D 単位: mm ○ スイッチングレギュレータ用 : RDS (ON) = 0.95 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 4.0 S (標準)
|
Original
|
TK6A65D
SC-67
2-10U1B
K6A65D
tk6a65d
k6a65
|
PDF
|
1A6-B
Abstract: No abstract text available
Text: 9?E-'@ 004? a 4VVS=>A # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri /.) + =L"`_#%^Ri V 2 AIG6 ADL <6I: 8 =6G<: O )'+22 " * X%eja + _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
|
Original
|
009-134-A
O-247
PG-TO247-3
O-247,
1A6-B
|
PDF
|
K6A65D
Abstract: k6a65
Text: K6A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII K6A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
|
Original
|
TK6A65D
28mitation,
K6A65D
k6a65
|
PDF
|
D9 DG transistor
Abstract: marking code 6C8 6dj8 transistor DJ marking transistor marking 6c9 IPA60R385CP diode marking 7n 6b102
Text: IPA60R385CP CoolMOS Power Transistor Product Summary Features V =L V DL: HI;><JG: D; B : G>I/ HG M . @ 1 [%^Ri /.) R =L"`_#%^Ri@T [ Y V 2 AIG6 ADL <6I: 8 =6G<: O )',1. " *0 Q X%eja _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V . J6A
|
Original
|
IPA60R385CP
D9 DG transistor
marking code 6C8
6dj8
transistor DJ marking
transistor marking 6c9
IPA60R385CP
diode marking 7n
6b102
|
PDF
|
6dj8
Abstract: No abstract text available
Text: ;@3,'A 005@ 5WWT>?BC> $ ; B 1 ='=-: >5>?; = $ =; 0@/?& @9 9 -=D 8MI[\YMZ V )DL: HI;><JG: D;B : G>I/ , + M . < V2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )'+22 " +, _< * X%eja V" MIG: B : 9K 9IG6I: 9 V% ><= E: 6@8 JGG: CI8 6E67>A >IN V- 7 ;G: : A
|
Original
|
696EI
6dj8
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E0'@*+'4* 4VVS=>A`#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY U DL:HI;><JG: D; B:G>I/ HGM.X U"MIG:B:9K 9IG6I:9 - !08 CX 2) O + =L"`_#%^Ri , C6+.t< )',- 9 2- _< * X%eja U%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
AN768@
26892F
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IPI50R399CP CoolMOSTM Power Transistor Product Summary Features V DL:HI;><JG:D;B:G>I/,+M.X V2AIG6ADL<6I:8=6G<: V !08M[^Ri ./) O R =L"`_#%^Ri )',22 *0 _< Q X%eja V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
IPI50R399CP
86E67
688DG9
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: ;@3-'A ,5@ 5WWT>?Bb$;B1='=-:>5>?;= $=;0@/?&@99-=D 8MI[\YMZ . !0 1[%^Ri V4DGA9L>9:7:HI/ =L%`_>C1, #JAAE6@ /.) , =L"`_#%^Ri%- [Y V2AIG6ADL<6I:8=6G<: O )'*+. + X%eja ., _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
1/5-88Dà
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E-'@ ,4? a 4VVS=>A #:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - !0 1[%^Ri V)DL:HI;><JG: D; B:G>I/ HGiJX /.) + =L"`_#%^Ri V2AIG6ADL<6I:8=6G<: O )'*+. * X%eja ., _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
26892F
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: B@3 ,>-'586 5WWT=?BC=$;B1='=-:>5>?;= $=;0@/?&@99-=D 8MI[\YMZ . !0 1?B6M V&CIG>CH>8;6HI G:8DK:GN7D9N9>D9: V"MIG:B:ANADLG:K:GH:G:8DK:GN8=6G<: 0/* O , =L#`_$&^Ri *(-* = +-(. 9 V2AIG6ADL<6I:8=6G<: I@'MH,*?I
|
Original
|
86E67
688DG9
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?-'@ -,4? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - =L 1[%^Ri V DL:HI;><JG: D; B:G>I/ HGiJX /.) + =L"`_#%^Ri V2AIG6ADL<6I:8=6G<: O )'*/. * X%eja ,2 _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
|
PDF
|
A5 GNA
Abstract: No abstract text available
Text: B@3'.>-'586 5WWT=?BC=$;B1='=-:>5>?;= $=;0@/?&@99-=D 8MI[\YMZ V&CIG>CH>8;6HI G:8DK:GN7D9N9>D9: V"MIG:B:ANADLG:K:GH:G:8DK:GN8=6G<: . =L 1[^Ri 0/* O , =L#`_$&^Ri * 1 = 0(0 9 V2AIG6ADL<6I:8=6G<: V"MIG:B:94 )U3 G6I:9
|
Original
|
86E67
688DG9
A5 GNA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E-'@ ,'4? 4VVS=>AB=#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - =L 1[%^Ri V)DL:HI;><JG: D; B:G>I/ HGiJX /.) + !0DC B6M 11 Y V2AIG6ADL<6I:8=6G<: O )'+.) * X%eja +/ _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
26892F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E-'@ -,4? 4VVS=>Aa#:A0<&<,9=4=>:< #<:/?.>%?88,<C 7LHZ[XLY - !0 1[%^Ri V DL:HI;><JG: D; B:G>I/ HGiJX /.) + =L"`_#%^Ri V2AIG6ADL<6I:8=6G<: O )'*/. * X%eja ,2 _< V"MIG:B:9K 9IG6I:9 V%><=E:6@8JGG:CI86E67>A>IN
|
Original
|
86E67
688DG9
26892F
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
D9 DG
Abstract: No abstract text available
Text: 9@B,'A, '4@ 4WWT>?BC> $ ;B 1 = '=-: >5>?;= $ =;0@/?& @9 9 -=D 7MI[\YMZ V )DL: HI;><JG: D;B : G>I/ , + M . X V 2 AIG6 ADL <6I: 8 =6G<: - !0 8M[^Ri .) O + =L"`_#%^Ri )'.+) " *, _< * X%eja V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A >IN V - 7 ;G: : A
|
Original
|
|
PDF
|
8D58
Abstract: No abstract text available
Text: B@3 ,>-'586 5WWT=?BC= $ ;B 1 ='=-: >5>?;= $ =;0@/?& @9 9 -=D 8MI[\YMZ . !0 V &CIG>CH>8;6HI G: 8 DK: GN 7D9N 9>D9: V "MIG: B : AN ADL G: K: GH: G: 8 DK: GN 8 =6G<: 1?B 6M 0/* O , =L#`_$&^Ri *(-* " = +-(. 9 V 2 AIG6 ADL <6I: 8 =6G<: I@'MH,*?I V "MIG: B : 94 )U3 G6I: 9
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 9?E-'@ ,'4? 4VVS=>AB= # : A 0<& <,9 =4=>: < # <: /?.>% ?8 8 ,<C 7LHZ[XLY - =L V )DL: HI;><JG: D; B : G>I/ HGiJX 1 [%^Ri + !0 DC B V 2 AIG6 ADL <6I: 8 =6G<: 6M /.) 11 Y O )'+.) " * X%eja +/ _< V " MIG: B : 9K 9IG6I: 9 V % ><= E: 6@8 JGG: CI8 6E67>A
|
Original
|
009-134-A
O-247
PG-TO247-3
O-247,
|
PDF
|
