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    K6A60D Price and Stock

    Toshiba America Electronic Components TK6A60D(STA4,Q,M)

    MOSFET N-CH 600V 6A TO220SIS
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    DigiKey TK6A60D(STA4,Q,M) Tube
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    Toshiba America Electronic Components TK6A60DR,S4X(S

    TK6A60DR - Power MOSFET (N-ch 500V<VDSS<700V)
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    Rochester Electronics TK6A60DR,S4X(S 10,250 1
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    Toshiba America Electronic Components TK6A60D(Q)

    Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS (Alt: TK6A60D(Q))
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    EBV Elektronik TK6A60D(Q) 26 Weeks 50
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    K6A60D Datasheets Context Search

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    K6A60D

    Abstract: K6A60 TK6A60D
    Text: K6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original     		PDF TK6A60D K6A60D K6A60 TK6A60D

    k6a60d

    Abstract: No abstract text available
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 600 V)


    Original     		PDF TK6A60D k6a60d

    K6A60D

    Abstract: No abstract text available
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D

    k6a60d

    Abstract: TK6A60D K6A60
    Text: K6A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ K6A60D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.0 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


    Original     		PDF TK6A60D SC-67 2-10U1B 20070701-JA k6a60d TK6A60D K6A60

    K6A60D

    Abstract: K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D K6A60 TK6A60D transistor K6A60D K6A6 TK6A K6A60D data marking i2

    K6A60D

    Abstract: TK6A60D transistor K6A60D K6A6 K6A60 TK6A
    Text: K6A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ K6A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) High forward transfer admittance: |Yfs| = 3.0 S (typ.)


    Original     		PDF TK6A60D K6A60D TK6A60D transistor K6A60D K6A6 K6A60 TK6A