Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV269V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V5 No. 2005. 4. 8 Item Marking Dvscription Device Mark V5 KDV269V Revision No : 0 1/1
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KDV269V
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C25V
Abstract: No abstract text available
Text: KDV269V SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CATV TUNING. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=11.0 Min. Low Series Resistance : rS=0.75 (Max.) C D 1 2 Excellent C-V Characteristics, and Small Tracking Error.
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KDV269V
C2V/C25V
470MHz
C25V
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KDV269V
Abstract: No abstract text available
Text: KDV269V SEMICONDUCTOR VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TECHNICAL DATA CATV TUNING. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=11.0 Min. ・Low Series Resistance : rS=0.75Ω(Max.) C D 1 2 ・Excellent C-V Characteristics, and Small Tracking Error.
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C2V/C25V
KDV269V
470MHz
KDV269V
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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kx marking
Abstract: No abstract text available
Text: SEM ICONDUCTOR TE CHNICAL DATA KDV269V VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES CATHOD E M ARK • H igh C apacitance R atio : C 2V /C 25V = 11.0 M in. • L ow Series R esistance : rs= 0.75£> (M ax.) • E xcellent C -V C haracteristics, and Sm all T racking Error.
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KDV269V
kx marking
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