marking V6
Abstract: KDV300V V6 marking MARKING "V6"
Text: SEMICONDUCTOR KDV300V MARKING SPECIFICATION VSC PACKAGE 1. Marking method Laser Marking 2. Marking V6 No. 2005. 4. 8 Item Marking Dvscription Device Mark V6 KDV300V Revision No : 0 1/1
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KDV300V
marking V6
KDV300V
V6 marking
MARKING "V6"
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diode marking v6
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK ・High Capacitance Ratio : C2V/C25V=14.5 Min. ・Low Series Resistance : rs=1.1Ω(Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25℃)
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C2V/C25V
KDV300V
470MHz
470MHz
diode marking v6
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diode marking v6
Abstract: KDV300V VR1060 C25V
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEATURES CATHODE MARK High Capacitance Ratio : C2V/C25V=14.5 Min. Low Series Resistance : rs=1.1 (Max.) C D 1 2 B DIM A B C D E F A MAXIMUM RATING (Ta=25
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KDV300V
C2V/C25V
470MHz
diode marking v6
KDV300V
VR1060
C25V
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KDV300V TECHNICAL DATA TV Tuning. FEATURES 2005. 4. 7 Revision No : 0 1/2
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KDV300V
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kdv300v
Abstract: No abstract text available
Text: S EM IC O N D U C T O R KDV300V TE CHNICAL DATA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning. FEA T U RE S • High Capacitance Ratio : C2v/C 25v= 14.5 M in. • Low Series Resistance : rs= l .l & (M ax.) M A X IM U M RATING (Ta=25°C)
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OCR Scan
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PDF
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KDV300V
470MH
kdv300v
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