kf5n53
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N53F N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N53F
dI/dt100A/,
kf5n53
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transistor KF5n50fza
Abstract: mosfet KF5N50 KF5N50F KF5N50FS
Text: SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50FSA)
300ns
KF5N50FZA)
KF5N50FZA/FSA
dI/dt100A/,
transistor KF5n50fza
mosfet KF5N50
KF5N50F
KF5N50FS
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kf5n53
Abstract: KF5N53I marking 205a KF5N
Text: SEMICONDUCTOR KF5N53D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N53D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N53D/I
KF5N53D
Fig12.
Fig13.
Fig14.
Fig15.
kf5n53
KF5N53I
marking 205a
KF5N
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50FZA/FSA
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KF5N
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N53DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N53DZ/DS
150ns
KF5N53DS)
300ns
KF5N53DZ)
Fig13.
Fig14.
Fig15.
KF5N
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transistor KF5n50
Abstract: KF5N50 mosfet KF5N50 KF5N50P KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ
Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50P/F/PZ/FZ
KF5N50P,
KF5N50PZ
KF5N50P
KF5N50PZ
Fig15.
Fig16.
Fig17.
transistor KF5n50
KF5N50
mosfet KF5N50
KF5N50F
transistor KF5n50 102
FZ 101
KF5N50FZ
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KF5N50
Abstract: transistor KF5n50 KF5N50D mosfet KF5N50
Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50D/DZ
Fig12.
Fig13.
Fig14.
Fig15.
KF5N50
transistor KF5n50
KF5N50D
mosfet KF5N50
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KF5N60
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N60D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N60D This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N60D/I
KF5N60D
Fig13.
Fig14.
Fig15.
KF5N60
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KF5N50
Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package
Text: SEMICONDUCTOR KF5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item KF5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009
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KF5N50DZ
KF5N50
KF5N50
5n50
KF 5N50
DPak
KF5N50DZ
KF5N50D
5N-50
D-PAK package
KF5N
dpak Package
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kf5n53
Abstract: KF5N53DS diode marking 41a on semiconductor KF5N
Text: SEMICONDUCTOR KF5N53DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N53DS)
300ns
KF5N53DZ)
KF5N53DZ/DS
Fig12.
Fig13.
Fig14.
Fig15.
kf5n53
KF5N53DS
diode marking 41a on semiconductor
KF5N
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kf5n53
Abstract: KF5N53FS TD 2012
Text: SEMICONDUCTOR KF5N53FS N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N53FS
dI/dt100A/,
kf5n53
KF5N53FS
TD 2012
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KF5N60
Abstract: KF5N60FZ FZ 101
Text: SEMICONDUCTOR KF5N60P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N60P, KF5N60PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N60P/F/PZ/FZ
KF5N60P,
KF5N60PZ
KF5N60P
KF5N60PZ
Fig15.
Fig16.
Fig17.
KF5N60
KF5N60FZ
FZ 101
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kf5n50 ds
Abstract: transistor KF5n50 KF5N50 KF5N50DZ
Text: SEMICONDUCTOR KF5N50DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50DS)
300ns
KF5N50DZ)
KF5N50DZ/DS
Fig13.
Fig14.
Fig15.
kf5n50 ds
transistor KF5n50
KF5N50
KF5N50DZ
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transistor KF5n50
Abstract: KF5N50 mosfet KF5N50 KF5N50PZ
Text: SEMICONDUCTOR KF5N50PZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50PZ
Fig13.
Fig14.
Fig15.
transistor KF5n50
KF5N50
mosfet KF5N50
KF5N50PZ
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50PS/FS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50PS/FS
KF5N50PS
150ns
KF5N50FS
Fig15.
Fig16.
Fig17.
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transistor KF5n50
Abstract: KF5N50 KF5N50D mosfet KF5N50
Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50D/DZ
Fig13.
Fig14.
Fig15.
transistor KF5n50
KF5N50
KF5N50D
mosfet KF5N50
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KF5N65F
Abstract: KF5N65P KF5N KF5N65
Text: SEMICONDUCTOR KF5N65P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N65P This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N65P/F
KF5N65P
Fig15.
Fig16.
Fig17.
KF5N65F
KF5N65P
KF5N
KF5N65
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KF3N50
Abstract: KF5N
Text: SEMICONDUCTOR KF5N50DZ/IZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50DZ/IZ
KF5N50DZ
Fig13.
Fig14.
Fig15.
KF3N50
KF5N
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transistor KF5n50
Abstract: KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50PS/FS
KF5N50PS
EnerFig14.
Fig15.
Fig16.
Fig17.
transistor KF5n50
KF5N50FS
KF5N50
KF5N50 fs
mosfet KF5N50 FS
transistor KF5n50 fs 102
transistor KF5n50fs
KF5N50F
mosfet KF5N50
KF5N50P
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KF5N53F N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N53F
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KF5N40
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N40D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N40D This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Convertor and
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KF5N40D/I
KF5N40D
KF5N40
KF5N40
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50P/F/PZ/FZ
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N65D/I TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N65D/I
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