transistor KF5n50fza
Abstract: mosfet KF5N50 KF5N50F KF5N50FS
Text: SEMICONDUCTOR KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50FSA)
300ns
KF5N50FZA)
KF5N50FZA/FSA
dI/dt100A/,
transistor KF5n50fza
mosfet KF5N50
KF5N50F
KF5N50FS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50FZA/FSA
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transistor KF5n50
Abstract: KF5N50 mosfet KF5N50 KF5N50P KF5N50F transistor KF5n50 102 FZ 101 KF5N50FZ
Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50P, KF5N50PZ A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50P/F/PZ/FZ
KF5N50P,
KF5N50PZ
KF5N50P
KF5N50PZ
Fig15.
Fig16.
Fig17.
transistor KF5n50
KF5N50
mosfet KF5N50
KF5N50F
transistor KF5n50 102
FZ 101
KF5N50FZ
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KF5N50
Abstract: transistor KF5n50 KF5N50D mosfet KF5N50
Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50D/DZ
Fig12.
Fig13.
Fig14.
Fig15.
KF5N50
transistor KF5n50
KF5N50D
mosfet KF5N50
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KF5N50
Abstract: 5n50 KF 5N50 DPak KF5N50DZ KF5N50D 5N-50 D-PAK package KF5N dpak Package
Text: SEMICONDUCTOR KF5N50DZ MARKING SPECIFICATION DPAK PACKAGE 1. Marking method Laser Marking. 2. Marking 2 No. Item KF5N50 1 DZ 3 801 Marking Description KF KEC Fresh FET 5N50 5N50 Revision DZ DPAK Lot No. 801 Device Name 2008. 12. 1 Revision No : 0 8 Year 0~9 : 2000~2009
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KF5N50DZ
KF5N50
KF5N50
5n50
KF 5N50
DPak
KF5N50DZ
KF5N50D
5N-50
D-PAK package
KF5N
dpak Package
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kf5n50 ds
Abstract: transistor KF5n50 KF5N50 KF5N50DZ
Text: SEMICONDUCTOR KF5N50DZ/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50DS)
300ns
KF5N50DZ)
KF5N50DZ/DS
Fig13.
Fig14.
Fig15.
kf5n50 ds
transistor KF5n50
KF5N50
KF5N50DZ
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transistor KF5n50
Abstract: KF5N50 mosfet KF5N50 KF5N50PZ
Text: SEMICONDUCTOR KF5N50PZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50PZ
Fig13.
Fig14.
Fig15.
transistor KF5n50
KF5N50
mosfet KF5N50
KF5N50PZ
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50PS/FS
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50PS/FS
KF5N50PS
150ns
KF5N50FS
Fig15.
Fig16.
Fig17.
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transistor KF5n50
Abstract: KF5N50 KF5N50D mosfet KF5N50
Text: SEMICONDUCTOR KF5N50D/DZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50D/DZ
Fig13.
Fig14.
Fig15.
transistor KF5n50
KF5N50
KF5N50D
mosfet KF5N50
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KF3N50
Abstract: KF5N
Text: SEMICONDUCTOR KF5N50DZ/IZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50DZ This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50DZ/IZ
KF5N50DZ
Fig13.
Fig14.
Fig15.
KF3N50
KF5N
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transistor KF5n50
Abstract: KF5N50FS KF5N50 KF5N50 fs mosfet KF5N50 FS transistor KF5n50 fs 102 transistor KF5n50fs KF5N50F mosfet KF5N50 KF5N50P
Text: SEMICONDUCTOR KF5N50PS/FS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF5N50PS A This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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150ns
KF5N50PS/FS
KF5N50PS
EnerFig14.
Fig15.
Fig16.
Fig17.
transistor KF5n50
KF5N50FS
KF5N50
KF5N50 fs
mosfet KF5N50 FS
transistor KF5n50 fs 102
transistor KF5n50fs
KF5N50F
mosfet KF5N50
KF5N50P
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50P/F/PZ/FZ TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF5N50P/F/PZ/FZ
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KF5N50DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50DS
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kf5n50
Abstract: transistor KF5n50 mosfet KF5N50 KF5N50DZ transistor KF5n50 102 kf5n50 ds KF5N50D kf5n50ds DIODE MARKING 534 "Field Effect Transistor"
Text: SEMICONDUCTOR KF5N50DR/DS TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for
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KF5N50DR/DS
150ns
Fig13.
Fig14.
Fig15.
kf5n50
transistor KF5n50
mosfet KF5N50
KF5N50DZ
transistor KF5n50 102
kf5n50 ds
KF5N50D
kf5n50ds
DIODE MARKING 534
"Field Effect Transistor"
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KF5N50
Abstract: kf12n60 IC 1N4007 diode 400V 4A TO220IS 1N4007 diode bridge MB6S mje13005 DF06 IC kf13n50
Text: Package Line-up Outline Name ESM USM TSM SOT-23 FLP-8 DPAK FLP-14 Size[㎣] 1.65x0.85 2.0×1.25 2.9×1.6 2.93×1.3 4.85×3.94×1.6 6.6×6.1 8.66×3.94×1.63 Type No. Package MB6S / M VRRM MBS / M IF Type No. KTC3003 HV 0.5A 600V DF06(S) DF(S) 1N4007(G) DO-41
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OT-23
FLP-14
KTC3003
1N4007
DO-41
MJE13003
MJE13005
O-126
KF5N50
kf12n60
IC 1N4007
diode 400V 4A
TO220IS
1N4007 diode bridge
MB6S
DF06 IC
kf13n50
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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