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Samsung Semiconductor KM23C4000C KM23C4000C
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Quest Components	KM23C4000C		100			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samsung Semiconductor KM23C4000B-15 IC,ROM,512KX8,CMOS,DIP,32PIN,PLASTIC
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Quest Components	KM23C4000B-15		30			1 - 10 - 100 - 1000 - 10000 -	Buy Now
Samsung Semiconductor KM23C4000C-12 IC,ROM,512KX8,CMOS,DIP,32PIN,PLASTIC
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Quest Components	KM23C4000C-12		1			1 $1.42 10 $1.42 100 $1.42 1000 $1.42 10000 $1.42	Buy Now
Samsung Semiconductor KM23C4000C12 Electronic Component
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ComSIT USA	KM23C4000C12		22,740			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samsung Semiconductor KM23C4000B12 Electronic Component
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ComSIT USA	KM23C4000B12		2,200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

KM23C400 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
KM23C4000D-10	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000D-12	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000D-8	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DETY-10	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DETY-12	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DETY-8	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DG-10	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DG-12	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DG-8	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DTY-10	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DTY-12	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF
KM23C4000DTY-8	Samsung Electronics	4M-Bit (512K x 8) CMOS MASK ROM	Original	PDF

KM23C400 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation	Original	KM23C4000D 512Kx8) 32-TSOP1-0820 331MAX 010TYP 047MAX	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation	Original	KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation	Original	KM23C4000D 512Kx8) 32-TSOP1-0820 32-TSOP1-0820) 331MAX 047MAX	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation	Original	KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525	PDF
mask rom Abstract: KM23C400 Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation	Original	KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 mask rom KM23C400	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50\|iA(M ax.)	OCR Scan	KM23C4000D 512Kx8) 288x8 23C4000D 32-DIP-600 23C4000DG 32-SOP-525 23C4000D	PDF
KM23C4001 Abstract: No abstract text available Text: SAM SUN G E L E C T R O N I C S INC 42E El 7 clb m M B oonm o 5 QSNGK KM23C4001 CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM V ‘ ! ' 1 3 - 1 3 - / 5 FEATURES GENERAL DESCRIPTION • • • • The KM23C4001 is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using	OCR Scan	KM23C4001 512Kx8) KM23C4001 288x8 150ns 32-pin, 600mll, b4142	PDF
Untitled Abstract: No abstract text available Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • • • • • • GENERAL DESCRIPTION 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50ftA (max.)	OCR Scan	KM23C4000B 512Kx8) 120ns 50ftA 32-pin 23C4000B) KM23C4000BG	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all	OCR Scan	KM23C4000D 512KX8) 32-TSQP1-0820 100pF KM2JC4000D KM23C4 TY-10 KMZ3C4000D	PDF
Untitled Abstract: No abstract text available Text: KM23C4000H G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288 x 8 brt. It Is fabricated using sillcon-gate CMOS process technology. • • •	OCR Scan	KM23C4000H 512Kx8) 100ns 32-pin	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V	OCR Scan	KM23C4000D 512Kx8) 23C4000D 32-TSO P1-0820 TY-10 TY-12	PDF
KM23C4001b Abstract: mask rom TA-51 Text: KM23C4001B G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001B is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization	OCR Scan	KM23C4001B 512KX8) 120ns 32-pin, 600mll, 288x8 mask rom TA-51	PDF
KM23C16005AG Abstract: 44TSOP2 44-TSOP2 Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE Density Power Supply 4M bit 5V±10% Part Number KM23C4000C G KM23C4100C(G/T) 8M bit 5V±10% 5V±10% 3.3V-0.3V 5Vt1C% 3 2M bit 3.3V+0.3V , 100 . Extended 512Kx8/256Kx16 100 - 150 KM23V41OOCET 512Kx 8 512Kx8/256Kx16	OCR Scan	KM23C4000C KM23C4100C KM23C410OCET KM23C4200C 512Kx 512Kx8/256Kx16 512Kx8/256Kx16 KM23C16005AG 44TSOP2 44-TSOP2	PDF
Untitled Abstract: No abstract text available Text: KM23C4000H CMOS MASK ROM 4M-Bit 5 1 2K x 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 23 C 4 000 H is a fully static mask programmable ROM organized 5 2 4 ,2 8 8 x 8 bit. It is fabricated using silicon -gate CMOS process tech nolog y	OCR Scan	KM23C4000H 100ns 32-pin KM23C4000H) KM23C4000HG)	PDF

Untitled Abstract: No abstract text available Text: SAM S UN G E L E C T R O N I C S INC b?E D 7^145 KM23C4000H G DDlb*Jflb 354 « S M C K CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The K M 2 3 C 4 0 0 0 H is a fully static mask programmable R O M organized 524,288 x 8 bit. It is fabricated u sin g	OCR Scan	KM23C4000H 512Kx8) 100ns 100//A 32-pin 23C4000H) 23C4000HG)	PDF
NSI150 Abstract: No abstract text available Text: KM23C4001H CMOS MASK ROM 4M-BH 512Kx 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4001H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. 524,288 x 8 bit organization	OCR Scan	KM23C4001H 512Kx KM23C4001H 288x8 100ns 32-pin, 600mil, KM23C4001H) NSI150	PDF
Untitled Abstract: No abstract text available Text: KM23C4000B CMOS MASK ROM 4M-Bit 512Kx 8 CMOS MASK ROM FEATURES • • • • • • • • • 524,288 x 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption Operating: 50mA (max.) Standby: 50/iA (max.) Fully static operation	OCR Scan	KM23C4000B 512Kx 120ns 50/iA 32-pin 32-pln KM23C4000B) KM23C4000BG)	PDF
Untitled Abstract: No abstract text available Text: KM23C4001H G CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Fast access time: 100ns (max.) Supply voltage: single + 5V Current consumption T h e K M 2 3C 4 0 01 H is a fu lly s ta tic m a s k p ro g ra m m a b le	OCR Scan	KM23C4001H 512KX8) 100ns KM23C4001H) KM23C4001HG)	PDF
Untitled Abstract: No abstract text available Text: CMOS MASK ROM KM23C4001B 4M-Bit 512Kx8 CMOS MASK ROM FEATURES • • • • 524,288 X 8 bit organization Fast access time: 120ns (max.) Supply voltage: single + 5V Current consumption O perating: 50mA (max.) • • • • • Fully static operation All inputs and outputs TTL compatible	OCR Scan	KM23C4001B 512Kx8) 120ns 32-pin, 600mil, KM23C4001B KM23C4001B) KM23C4001BG)	PDF
Untitled Abstract: No abstract text available Text: SAMSUNG ELECTRONICS INC b?E D • 7Tb4142 KM23C4000B G GGlbTflE 70=5 CMOS MASK ROM 4M-Bit (512Kx&f CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using	OCR Scan	7Tb4142 KM23C4000B 512Kx 120ns 32-pin KM23C4000B) KM23C4000BG)	PDF
Untitled Abstract: No abstract text available Text: KM23C4000D E}TY CMOS MASK ROM 4M-Bit (512Kx8 CM O S M A SK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable RO M organized 524,288 x 8bit. It is fabricated using silicon gate C M O S process technology.	OCR Scan	KM23C4000D 512Kx8) 32-TSO P1-0820 TY-10 TY-12	PDF
Untitled Abstract: No abstract text available Text: KM23C4000H CMOS MASK ROM 4M-Bit 512Kx8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000H is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon-gate CMOS process technology. • • • •	OCR Scan	KM23C4000H 512Kx8) 100ns 100/iA 32-pin KM23C4000H 288x8 4000H	PDF
KM23C4000B Abstract: mask rom Text: CMOS MASK ROM KM23C4000B G 4M-Bit (512Kxfy CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23C4000B is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon-gate CMOS process technology.	OCR Scan	KM23C4000B 512Kxfy 32-DIP, KM23C4000BG 32-SOP, 120ns mask rom	PDF
Untitled Abstract: No abstract text available Text: KM23C4001A CMOS MASK ROM 4M-Bit 512K x8 CMOS MASK ROM FEATURES • • • • 524,288 x 6 bit organization Fast access time: 150ns (max.) Supply voltage: single + 5V Current consumption O perating: 50mA (max.) • • • • • Fully static operation	OCR Scan	KM23C4001A 150ns 32-pin, 600mil, KM23C4001A operation23C4001A KM23C4001A) KM23C4001AG)	PDF

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Samsung Semiconductor KM23C4000C

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KM23C400 Datasheets (12)

KM23C400 Datasheets Context Search

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mask rom

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KM23C4001

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KM23C4001b

KM23C16005AG

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NSI150

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KM23C4000B

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