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    KM23C4000D Search Results

    KM23C4000D Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C4000D-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000D-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DETY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DG-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-10 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-12 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF
    KM23C4000DTY-8 Samsung Electronics 4M-Bit (512K x 8) CMOS MASK ROM Original PDF

    KM23C4000D Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 32-TSOP1-0820 331MAX 010TYP 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 32-TSOP1-0820 32-TSOP1-0820) 331MAX 047MAX

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525

    mask rom

    Abstract: KM23C400
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288x8 bit organization • Access time : 80ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 mask rom KM23C400

    32-TSOP1-0820

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 524,288 x 8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation


    Original
    PDF KM23C4000D 512Kx8) 32-TSOP1-0820 331MAX 047MAX 32-TSOP1-0820

    Q721

    Abstract: KM23V4000D KM23V4000DG
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 524,288 x 8 bit organization The KM23V4000D(G) is a fully static mask programmable ROM organized 524,288 x 8 bit. It is fabricated using silicon gate CMOS process technology.


    Original
    PDF KM23V4000D 512Kx8) 32-DIP KM23C4000DG 32-SOP. 32-SOP-525 118MAX 822MAX Q721 KM23V4000DG

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V Current consumption Operating : 50m A(M ax.) Standby : 50|iA(M ax.)


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    PDF KM23C4000D 512Kx8) 288x8 23C4000D 32-DIP-600 23C4000DG 32-SOP-525 23C4000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512KX8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable ROM organized 524,288 x 8bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


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    PDF KM23C4000D 512KX8) 32-TSQP1-0820 100pF KM2JC4000D KM23C4 TY-10 KMZ3C4000D

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM 23C4000D(E)TY is a fully static mask programm able • • • • 524,288 x 8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V


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    PDF KM23C4000D 512Kx8) 23C4000D 32-TSO P1-0820 TY-10 TY-12

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E}TY CMOS MASK ROM 4M-Bit (512Kx8 CM O S M A SK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable RO M organized 524,288 x 8bit. It is fabricated using silicon gate C M O S process technology.


    OCR Scan
    PDF KM23C4000D 512Kx8) 32-TSO P1-0820 TY-10 TY-12

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E TY CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 5 2 4 ,2 8 8 x 8 bit o rg a n iz a tio n T h e K M 2 3 C 4 0 0 0 D (E )T Y is a fu lly s ta tic m a sk p ro g ra m m a b le • A c c e s s tim e : 8 0 n s (M a x .)


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    PDF KM23C4000D 512Kx8)

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • • • • • • • • GENERAL DESCRIPTION 524,288x8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50nA(Max.)


    OCR Scan
    PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 100pF

    KM23C4000

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION The KM23C4000D(G) is a fully static mask programmable ROM organized 524,288x8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan
    PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 100pF KM23C4000

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • • • • • • • • 524,288x8 bit organization Access tim e : 80ns(M ax.) Supply voltage : single +5V C urrent consumption Operating : 50mA(M ax.) Standby : 50|iA(M ax.)


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    PDF KM23C4000D 512Kx8) 288x8 23C4000D 32-DIP-600 23C4000DG 32-SOP-525 23C4000D 32-DIP-600)

    Untitled

    Abstract: No abstract text available
    Text: KM23V4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES • 524,288 x 8 bit organization • Fast access time 3.3V Operation : 100ns(Max.) 3.0V Operation : 120ns(Max.) • Supply voltage : single +3.0V/ single +3.3V • Current consumption


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    PDF KM23V4000D 512Kx8) 100ns 120ns KM23V4000D 32-DIP-600 KM23V4000DG 32-SOP-525 100pF

    Untitled

    Abstract: No abstract text available
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Introduction . 11 2. Product Guide . 14 3. Ordering Information . 16


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    PDF KM23C4000D KM23C4100D KM23C41 KM23V64000T. KM23V64005AG KM23V64005ATY. KM23V64205ASG KM23SV32205T