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    48TSOP1

    Abstract: MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12
    Text: MEMORY ICs 1. FUNCTION GUIDE INTRODUCTION 4M bit \ KM23C400QD G -8 512KX8 [- 1 KM23C4QOOD(G)-10 KM23C40QQD(E)TY-8 \ |— KM23C4Q00D(G)-12 ]- 1 KM23C4Q00D(E)'TY-10 |- 1 KM23C4000D(E)7Y-12 — [ KM23V4000D(E)TY-10 |- 1 KM23V4000D{E)TY-12 |-j KM23V4000D(E)TY-15


    OCR Scan     		PDF 512KX8 KM23C400QD KM23C4QOOD KM23C4Q00D KM23C40QQD TY-10 KM23C4000D 7Y-12 KM23V4000D 48TSOP1 MX* 64M-Bit eprom TY15 km23c32000cg-10 23v322 KM23C16205BSG-10 7Y12

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D E}TY CMOS MASK ROM 4M-Bit (512Kx8 CM O S M A SK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C4000D(E)TY is a fully static mask programmable RO M organized 524,288 x 8bit. It is fabricated using silicon gate C M O S process technology.


    OCR Scan     		PDF KM23C4000D 512Kx8) 32-TSO P1-0820 TY-10 TY-12

    Untitled

    Abstract: No abstract text available
    Text: KM23C4000D G CMOS MASK ROM 4M-Bit (512Kx8) CMOS MASK ROM FEATURES • • • • • • • • GENERAL DESCRIPTION 524,288x8 bit organization Access time : 80ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50nA(Max.)


    OCR Scan     		PDF KM23C4000D 512Kx8) 288x8 KM23C4000D 32-DIP-600 KM23C4000DG 32-SOP-525 100pF