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    KM23C8 Search Results

    KM23C8 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM23C8000D-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000D-15 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-10 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8000DG-12 Samsung Electronics 8M-Bit (1Mx8) CMOS MASK ROM Original PDF
    KM23C8100D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DET-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DG-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8100DT-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-12 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105D-15 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF
    KM23C8105DET-10 Samsung Electronics 8M-Bit (1Mx8 /512K x 16) CMOS MASK ROM Original PDF

    KM23C8 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    U 324 SAMSUNG

    Abstract: KM23C8100BG 524288X16
    Text: SA MS UN G E L E C T R O N I C S INC b?E D • 7=11,4142 0G17DL.0 ÔT7 SM6K CMOS MASK ROM KM23C81 OOB G 8 M-BH ( 1M X 8 / 5 1 2 K X 16) C M O S M A S K R O M FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode)


    OCR Scan     		KM23C81 0G17DL 8/512K 100ns 42-pin, 44-pin, KM23C8100B KM23C8100B) KM23C8100BG) U 324 SAMSUNG KM23C8100BG 524288X16 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G ELECTRONICS CMOS Mask ROM 8M-Bit (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :100ns(max.) • Supply voltage : single +5V • Current consumption Operating : 60 mA(max.) Standby : 50 fiA (max.)


    OCR Scan     		KM23C8000B 100ns KM23C8000B 32-DIP-600 KM23C8000BG 32-SOP-525 576x8bit. PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS MASK ROM KM23C8000D G 8M-Bit (1 Mx8) CMOS MASK ROM GENERAL DESCRIPTION FEATURES 1,0 48,576 x 8 bit org an izatio n Fast access tim e :1 0 0 n s (m a x .) S up ply vo lta g e : sin gle +5V C u rrent con sum p tion O perating : 50m A (m ax.) S ta n d b y


    OCR Scan     		KM23C8000D PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM23C8001H CMOS MASK ROM 8M-Bit 1M X 8 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001H is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		KM23C8001H KM23C8001H 100ns 32-pin, sing60 KM23C8001H) KM23C8001HG) PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7c b m 4 2 GG17034 70S « S N 6 K KM23C8005B G) CMOS MASK ROM 8M-Bit (1M x8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time Random access: 100ns (max.) Page access: 50ns (max.)


    OCR Scan     		GG17034 KM23C8005B 100ns 32-pin, KM23C80Q5B D017037 KM23C8005B) KM23C8005BG) PDF

    23C8100DG

    Abstract: No abstract text available
    Text: KM23C8100D G CMOS MASK ROM 8M-Bit (1Mx8 512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • C urrent consumption


    OCR Scan     		KM23C8100D 512Kx16) 100ns KM23C8100D 42-DIP-600 23C8100DG 44-SQP-600 23C8100D KM23C81 42-DIP-600) 23C8100DG PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000P G CMOS MASK ROM 8M-Bit (1Mx8) CMOS M ASK ROM FEATURES G EN ERA L DESCRIPTION • 1,048,576 x 8 bit organization • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating: 50mA(Max.) Standby : 50fiA(Max.)


    OCR Scan     		KM23C8000P 100ns 50fiA KM23C8000D 32-DIP-600 8000D 32-SOP-525 KM23C8000D 100pF PDF

    mask rom

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION . . . . The KM23C8Q00D(G) is a fully static mask programmable ROM organized 1,048,576 x 8 bit. It is fabricated using silicon gate CMOS process technology. This device operates with a 5V single power supply, and all


    OCR Scan     		KM23C8000D 100ns KM23C8000D IP-600 KM23C8000DG 32-SOP-525 KM23C8Q00D 100pF mask rom PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION » Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns{Max.) Page Access : 30ns{Max.) • 4 Words / 8 bytes page access


    OCR Scan     		KM23C8105D /512Kx16) 100ns KM23C8105D 42-DIP-600 KM23C8105DG 44-SOP-6M KM23C81050 KM23C KM23C81QSD PDF

    KM23C8001B

    Abstract: KM23C8001
    Text: KM23C8001B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8001B is a fully static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. 1,048,576 x 8 bit organization


    OCR Scan     		KM23C8001B 100ns 32-DIP KM23V8001BG KM23C8001B) KM23C8001BG) KM23C8001 PDF

    ci-42

    Abstract: No abstract text available
    Text: KM23C81 OOA G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2 K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.) • Supply voltage: single + 5V • Current consumption


    OCR Scan     		KM23C81 150ns 50jjA 42-pin, 44-pin, KM23C8100A KM23C8100A) KM23C8100AG) ci-42 PDF

    E5ex

    Abstract: No abstract text available
    Text: KM23C8100CET CMOS Mask ROM ELECTRONICS 8M-Bit 1 M X 8/512 K x 16 M-ROM(Extended Temperature Product) • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16(word mode) • Fast access time : 120ns(max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		KM23C8100CET 120ns 44-TSQP2-400 KM23C8100CET 576x8bit 288x16bit KM23C8100CET) E5ex PDF

    KM23C8100BG

    Abstract: No abstract text available
    Text: KM23C81 OOB G CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5V • C urrent consumption


    OCR Scan     		KM23C81 100ns 50/jA 42-pin, 44-pin, KM23C8100B KM23C8100B) KM23C8100BG) KM23C8100BG PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000C G CMOS Mask R O M ELECTRONICS 8M-BÏÏ (1M X8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 1,048,576x 8 bit organization • Fast access time :120ns(max.) • Supply voltage : single +5V • Current consumption Operating :60 mA(max.) Standby : 50 ¡Jf\ (max.)


    OCR Scan     		KM23C8000C 120ns KM23C8000C 32-DIP-600 KM23C8000CG 32-SOP-525 576x8bit. PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000D G CMOS MASK ROM 8M-Bit (1Mx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • 1,048,576 x 8 bit organization Fast access time : 100ns(Max.) Supply voltage : single +5V Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)


    Original     		KM23C8000D 100ns KM23C8000D 32-DIP-600 KM23C8000DG 32-SOP-525 118MAX 822MAX PDF

    km23c8105bg

    Abstract: km23c8105 samsung ace
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4142 KM23C8105B G □G170b4 MME I SMGK CMOS MASK ROM 8M -Bit (1M x 8/512K x 16) CMOS M ASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time


    OCR Scan     		KM23C8105B 0017DbM x8/512Kx 100ns 42-pin, 44-pin, 17Db7 KM23C8105B) km23c8105bg km23c8105 samsung ace PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7^4142 KM23C81 OOA G DülTGSb 37b «SPICK CMOS MASK ROM 8M-Bit (1M X 8 /5 1 2K X 16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 150ns (max.)


    OCR Scan     		KM23C81 150ns 42-pin, 44-pin, KM23C8100A D0170b7 KM23C8105B KM23C8105B) KM23C8105BG) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100AFP2 CMOS MASK ROM 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • S w itc h a b le o rg a n iza tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) The KM23C8100AFP2 is a fully static mask programma­ ble ROM fabricated using silicon gate CMOS process


    OCR Scan     		KM23C8100AFP2 KM23C8100AFP2 150ns KM23C8100AFP2) PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS MASK ROM KM23C8100H 8M-Bit 1M X 8 /5 1 2 K X 16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8 (byte mode) 524,288 x 16 (word mode) • Fast access time: 100ns (max.) • Supply voltage: single + 5 V


    OCR Scan     		KM23C8100H 100ns 42-pin, 44-pin, KM23C8100H KM23C8100H) KM23C8100HG) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C81 OOD E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access tim e : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    OCR Scan     		KM23C81 /512Kx16) 100ns 8100D 44-TSQ P2-400 23C8100D PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC 42E D n 7=1^142 G Q lllb B b CMOS MASK ROM KM23C8000 8M-BH 1M X 8 CMOS MASK ROM FEATURES • • • • • • • • • 1,048,576 x 8 bit organization Fast access tim e: 150ns (max.) Supply voltage: single + 5 V C urrent consum ption


    OCR Scan     		KM23C8000 150ns 32-pln, KM23C8000) 23C8000G) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8100D E T CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption


    Original     		KM23C8100D /512Kx16) 100ns 44-TSOP2-400 44-TSOP2-400) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8105B G CMOS MASK HOM 8M-Bit (1M x 8/512 K x 16) CM O S M ASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 1,048,576 x 8 (byte m ode) 524,288 x 16 (word mode) • F a st a c c e s s time R an do m a c c e ss: 100ns (max.) P a ge a c ce ss: 50 n s (max.)


    OCR Scan     		KM23C8105B 100ns 42-pin, 44-pin, KM23C8105B) KM23C8105BG) PDF

    Untitled

    Abstract: No abstract text available
    Text: KM23C8000B G CMOS MASK ROM 8M-Bit (1M X 8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • • • • The KM23C8000B is a fu lly static mask programmable ROM organized 1 ,0 4 8 ,5 7 6 X 8 bit. It is fabricated using silicon-gate CMOS process technology. •


    OCR Scan     		KM23C8000B 576x8 100ns 50/iA 32-pin, asynM23C80006 KM23C8000B) PDF