Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME D KM416C256/L/SL • 7^4142 DD1343Q Q24 I SHGK CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its
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KM416C256/L/SL
DD1343Q
KM416C256/USL
130ns
KM416C256/USL-8
150ns
KM416C256/L/SL-10
KM416C256/USL-7
100ns
180ns
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416C256
Abstract: KM416C256-7 KM416C256-10 km416c256 km416c256j KM416C256-8
Text: PRELIMINARY CMOS DRAM KM416C256 2 5 6 K X 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM 416C 256 is a CMOS high speed 2 6 2 ,1 4 4 bit X 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256
416C256
40-LEAD
KM416C256-7
KM416C256-10
km416c256
km416c256j
KM416C256-8
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KM41C4000AJ
Abstract: KM44C1000AZ "30 pin simm" KM41C4000Z KMM584000A KM41C4001AZ 1Mx4 SOJ 1Mx4 nibble 4Mx1 nibble
Text: FUNCTION GUIDE 2. Product Guide 2.1 Dynamic RAM Generation 1st Gen. 2nd Gen. 3rd Gen. Part Number Organization Speed ns Technology Feature Package Remark KM41C4000J KM41C4000Z KM 41C4000U KM41C4000LZ KM41C4001J KM41C40012 KM41C4002J KM41C40022 4M x1 4M x1
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KM41C4000J
KM41C4000Z
41C4000U
KM41C4000LZ
KM41C4001J
KM41C40012
KM41C4002J
KM41C40022
KM44C1OOOJ
KM44C1000Z
KM41C4000AJ
KM44C1000AZ
"30 pin simm"
KMM584000A
KM41C4001AZ
1Mx4 SOJ
1Mx4 nibble
4Mx1 nibble
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM416C256/L/SL
256Kx
KM416C256/L/SL
KM416C256/USL-7
130ns
KM416C256/USL-8
150ns
KM416C256/USL-10
100ns
180ns
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PE 8001A
Abstract: 23C1001 KM41C256P 23C1010 KM41C464P KM68512 km41c256 TFK 805 TFK 001
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM C apacity 256K bit 1M bit O rganization Speed ns T e ch n ology KM41C256P 255K X 1 70/80/100 CMOS Fast Page 16 Pm DIP Now KM41C256J 256 K X 1 70/80/100 CMOS Fast Page 16 Pm PLCC Now KM41C256Z 256Kx 1
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
PE 8001A
23C1001
23C1010
KM68512
km41c256
TFK 805
TFK 001
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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KM41C256P
KM41C255J
KM41C258Z
KM41C257P
KM41C257J
KM41C257Z
KM41C25BP
KM41C258J
KM41C464P
KM424C256Z
KM41C464
PB20
KM64258
KM68512
KMM5362000
KM23C2
64k 30-pin SIMM
KM23C4000A
KM41C4000BJ
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM416C256/L/SL 256Kx 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perfo rm ance range: The Samsung KM416C256/USL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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OCR Scan
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PDF
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KM416C256/L/SL
256Kx
KM416C256/USL
130ns
KM416C256/L/SL-8
150ns
KM416C256/L/SL-10
KM416C256/L/SL-7
100ns
180ns
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KMM591000AN
Abstract: KM41C464P KM424C256Z KMM591000B KM41C464 KMM584000B 4Mx1 nibble
Text: MEMORY ICS FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P 256K X 1 KM41C256J 256K X 1 KM41C256Z KM41C257P 256K X 1 256Kx 1 70/80/100 KM41C257J 256K X 1 256K X 1 Packages Remark CMOS Fast Page 16 Pin DIP Fast Page 18 Pin PLCC
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KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C464P
KMM591000AN
KM424C256Z
KMM591000B
KM41C464
KMM584000B
4Mx1 nibble
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km416c256
Abstract: KM416C256Z 416c256
Text: KM416C256/L/SL CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM416C256/L/SL is a CMOS high speed 262,144 bit x 16 Dynamic Random Access Memory. Its design is optimized for high performance applications
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OCR Scan
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PDF
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KM416C256/L/SL
KM416C256/L/SL-7
KM416C256/L/SL-8
KM416C256/L/SL-10
100ns
130ns
150ns
180ns
KM416C256/L/SL
km416c256
KM416C256Z
416c256
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