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    KM416S1021C

    Abstract: KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS
    Text: Preliminary CMOS SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs


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    PDF KM416S1021C 16Bit KM416S1021C A10/AP KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS

    KM416S1021C

    Abstract: KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS
    Text: Preliminary CMOS SDRAM KM416S1021C 512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply • SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs


    Original
    PDF KM416S1021C 16Bit KM416S1021C KM416S1021CT-G7 KM416S1021CT-G8 KM416S1021CT-GS

    SDRAM 1996

    Abstract: No abstract text available
    Text: KM416S1021BT SDRAM ELECTRO NICS 512K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


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    PDF KM416S1021BT 16Bit KM416S1020B/KM416S1021B hig1996 003300fci 50-TSOP2-400F 50-TSOP2-400R D03b2b2 SDRAM 1996

    VG264265B

    Abstract: TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference
    Text: Cross Reference Guide 1.3. Cross Reference Guide 1.3.1. Cross Reference of 256kxl6 DRAM Vendors\Configuration VIS Hitachi Hyundai Micron Motorola NEC Samsung Toshiba TI 256kxl6, 5V, EDO VG264265B HM514265D HY514264B MT4C16270 N/A PD4244265LE KM416C254D TC5144265D


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    PDF 256kxl6 256kxl6, VG264265B HM514265D HY514264B MT4C16270 uPD4244265LE KM416C254D TC5144265D TC5117405CSJ hyundai cross reference guide TC51V16160 Micron 4MX32 EDO SIMM dram cross reference cross reference tc5117800cft SAMSUNG Cross Reference

    Untitled

    Abstract: No abstract text available
    Text: KM416S1020BT SDRAM ELECTRONICS 512K x 16B itx2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • Dual banks operation. • MRS cycle with address key programs.


    OCR Scan
    PDF KM416S1020BT KM416S1020B/KM416S1021B 50-TSOP2-400F 50-TSOP2-400R D03b2b2

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM416S1021C CMOS SDRAM 512Kx 16Bitx 2 Banks Synchronous DRAM with SSTL interface FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply > SSTL_3 Class II compatible with multiplexed address • Dual banks operation • MRS cycle with address key programs


    OCR Scan
    PDF KM416S1021C 512Kx 16Bitx KM416S1021C 10/AP