KM416S16230
Abstract: No abstract text available
Text: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM416S16230A CMOS SDRAM Revision History
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KM416S16230A
256Mbit
16bit
A10/AP
KM416S16230
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Untitled
Abstract: No abstract text available
Text: KM416S16230A CMOS SDRAM 256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 Jun 1999 KM416S16230A CMOS SDRAM Revision History
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KM416S16230A
256Mbit
16bit
A10/AP
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS
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KM416S16230A
16Bit
KM44S64230A
A10/AP
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Untitled
Abstract: No abstract text available
Text: KM416S16230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply
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KM416S16230A
PC133
16Bit
KM44S64230A
A10/AP
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Untitled
Abstract: No abstract text available
Text: PC100 SODIMM KMM464S1654AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM464S1654AT1
PC100
16Mx16
KM416S16230AT
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Untitled
Abstract: No abstract text available
Text: PC100 SODIMM KMM464S3254AT1 Revision History Revision 0.1 June 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM464S3254AT1
PC100
16Mx16
KM416S16230AT
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KMM366S1654AT-G8
Abstract: KMM366S1654AT-GH KMM366S1654AT-GL
Text: KMM366S1654AT PC100 Unbuffered DIMM Revision History [Rev.1] March 25.1999 Corrected refresh capability from 4096 Cycles/64ms to 8192 Cycles/64ms. Rev.1 Mar. 1999 KMM366S1654AT PC100 Unbuffered DIMM KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD
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KMM366S1654AT
PC100
Cycles/64ms
Cycles/64ms.
KMM366S1654AT
16Mx64
16Mx16,
KMM366S1654AT-G8
KMM366S1654AT-GH
KMM366S1654AT-GL
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Untitled
Abstract: No abstract text available
Text: Preliminary PC100 144pin SDRAM SODIMM KMM464S1654AT1 KMM464S1654AT1 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM464S1654AT1 is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM464S1654AT1 consists of four CMOS 16M x 16 bit
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KMM464S1654AT1
KMM464S1654AT1
PC100
144pin
16Mx64
16Mx16,
400mil
144-pin
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XC5L
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS
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KM416S16230A
16Bit
KM44S64230A
10/AP
XC5L
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SDRAM KM416S16230A 4M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JED EC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 4,196,304 w ords by 16
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KM416S16230A
16Bit
44S64230A
10/AP
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Untitled
Abstract: No abstract text available
Text: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam
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KMM366S1654AT
PC100
KMM366S1654AT
16Mx64
16Mx16,
M366S1654AT-G8
125MHz
400mil
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KMM366S1654ATS KMM366S1654ATS SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654ATS is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam
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PC100
KMM366S1654ATS
KMM366S1654ATS
16Mx64
16Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: SERIAL PRESENCE DETECT SDRAM MODULE PC100 Unbuffered SDRAM SODIMM 144pin SPD Specification REV. 1.50 November 1998 REV. 1.50 Nov. 1998 SERIAL PRESENCE DETECT SDRAM MODULE KMM464S424CT1-FH/FL •Organization : 4MX64 •Composition : 4MX16 *4 •Used component p a rt# : KM416S4030CT-FH/FL
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PC100
144pin)
KMM464S424CT1-FH/FL
4MX64
4MX16
KM416S4030CT-FH/FL
4K/64ms
100MHz
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Untitled
Abstract: No abstract text available
Text: KMM366S1654AT PC100 SDRAM MODULE KMM366S1654AT SDRAM DIMM 16Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S1654AT is a 16M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam
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KMM366S1654AT
KMM366S1654AT
PC100
16Mx64
16Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM366S3254AT PC100 SDRAM MODULE KMM366S3254AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254AT is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S3254AT
KMM366S3254AT
PC100
32Mx64
16Mx16,
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: PC100 SDRAM MODULE KMM366S3254ATS KMM366S3254ATS SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254ATS is a 32M bit x 64 Synchro • Performance range nous Dynamic RAM high density memory module. The Sam
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PC100
KMM366S3254ATS
KMM366S3254ATS
32Mx64
16Mx16,
400mil
168-pin
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ad 149
Abstract: No abstract text available
Text: KMM366S3254AT PC100 SDRAM MODULE KMM366S3254AT SDRAM DIMM 32Mx64 SDRAM DIMM based on 16Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S3254AT is a 32M bit x 64 Synchronous • Performance range Dynamic RAM high density memory module. The Samsung
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KMM366S3254AT
KMM366S3254AT
PC100
32Mx64
16Mx16,
400mil
168-pin
ad 149
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KMM366S424BTL-G0
Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .
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KM44S4020CT
KM48S2020CT
KM416S1020CT
KM416S1021CT
1Mx16
KM44S16020BT
KM48S8020BT
KM416S4020BT
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4Mx64
KMM366S424BTL-G0
KMM466S824BT2F0
KMM466S424BT-F0
KMM466S824BT2-F0
4MX16
16MX8
KM44S4020CT
KM48S2020CT
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