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    Samsung Semiconductor KM44S64230AT-GL

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    KM44S64230A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM44S64230AT-G/F8 Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S64230AT-G/FA Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S64230AT-G/FH Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Original PDF
    KM44S64230AT-G/FL Samsung Electronics 16M x 4-Bit x 4 Banks Synchronous DRAM Original PDF

    KM44S64230A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.3 May 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.3 May 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM44S64230A 256Mbit A10/AP RA12

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A Preliminary PC133 CMOS SDRAM Revision History Revision 0.0 Jan., 1999 • PC133 first published. REV. 0 Jan. '99 Preliminary PC133 CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply


    Original     		PDF KM44S64230A PC133 KM44S64230A A10/AP

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M x 4Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG's high performance CMOS


    Original     		PDF KM44S64230A KM44S64230A A10/AP RA12

    RA12

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM44S64230A 256Mbit A10/AP RA12

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M x 4bit x 4 Banks Synchronous DRAM LVTTL Revision 0.4 JUN 1999 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 0.4 JUN 1999 KM44S64230A CMOS SDRAM Revision History Revision 0.1 Jan. 05, 1999


    Original     		PDF KM44S64230A 256Mbit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS


    Original     		PDF KM416S16230A 16Bit KM44S64230A A10/AP

    Untitled

    Abstract: No abstract text available
    Text: SDRAM MODULE Preliminary KMM377S6450AT2 Revision History Revision 1 November 1998 -Corrected DQ# at the input of SDRAM(D5) as DQ16~19 @Functional Block Diagram REV. 1 Nov. 1998 Preliminary KMM377S6450AT2 SDRAM MODULE KMM377S6450AT2 SDRAM DIMM (Intel 1.1 ver. Base)


    Original     		PDF KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits

    KMM377S6450AT3-GL

    Abstract: KMM377S6450AT3-GH
    Text: SDRAM MODULE KMM377S6450AT3 KMM377S6450AT3 SDRAM DIMM 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT3 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT3 consists of eighteen CMOS 64Mx4


    Original     		PDF KMM377S6450AT3 KMM377S6450AT3 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin KMM377S6450AT3-GL KMM377S6450AT3-GH

    PC133 registered reference design

    Abstract: KMM390S6450AT1-GA
    Text: KMM390S6450AT1 PC133 Registered DIMM Revision History Revision 0.0 May. 1999 • PC133 first published Revision 0.1 (June. 1999) - Redefined feedback capacitor value to Cb, variable value, which depends upon the PLL chosen at Functional Block Diagram - Defined " This module is based on JEDEC PC133 Specification" at Package Dimensions


    Original     		PDF KMM390S6450AT1 PC133 KMM390S6450AT1 64Mx72 64Mx4, PC133 registered reference design KMM390S6450AT1-GA

    Untitled

    Abstract: No abstract text available
    Text: KMM377S6450AT3 PC100 Registered DIMM Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM377S6450AT3 PC100 118DIA 000DIA 64Mx4 KM44S64230AT

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original     		PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KMM377S6450AT2-GH

    Abstract: CDC2509
    Text: SDRAM MODULE KMM377S6450AT2 KMM377S6450AT2 SDRAM DIMM Intel 1.1 ver. Base 64Mx72 SDRAM DIMM with PLL & Register based on 64Mx4, 4Banks, 8K Ref., 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION • Performance range The Samsung KMM377S6450AT2 is a 64M bit x 72 Synchronous Dynamic RAM high density memory module. The Samsung KMM377S6450AT2 consists of eighteen CMOS 64Mx4


    Original     		PDF KMM377S6450AT2 KMM377S6450AT2 64Mx72 64Mx4, 64Mx4 400mil 18-bits 24-pin KMM377S6450AT2-GH CDC2509

    CDC2509

    Abstract: No abstract text available
    Text: KMM377S6450AT3 PC100 Registered DIMM Revision History Revision 0.1 May 27, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		PDF KMM377S6450AT3 PC100 118DIA 000DIA 64Mx4 KM44S64230AT CDC2509

    RA12

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,


    Original     		PDF KM48S32230A KM48S32230A A10/AP RA12

    Untitled

    Abstract: No abstract text available
    Text: KM44S64230A CMOS SDRAM 256Mbit SDRAM 16M X 4bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM44S64230A CMOS SDRAM R evision H isto ry


    OCR Scan     		PDF KM44S64230A 256Mbit A10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 words by 4 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM44S64230A KM44S64230A 10/AP

    XC5L

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M x 16Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • • The KM44S64230A is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG'S high performance CMOS


    OCR Scan     		PDF KM416S16230A 16Bit KM44S64230A 10/AP XC5L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM44S64230A 16M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JEDEC standard 3.3V power supply rate Dynam ic RAM organized as 4 x 16,785,216 w o rds by 4


    OCR Scan     		PDF KM44S64230A 44S64230A 10/AP

    Untitled

    Abstract: No abstract text available
    Text: KM48S32230A CMOS SDRAM 256Mbit SDRAM 8M X 8bit X 4 Banks Synchronous DRAM LVTTL Revision 0.2 January 1999 Samsung Electronics reserves the right to change products or specification without notice. REV. 0.2 Jan. '99 KM48S32230A CMOS SDRAM R evision H isto ry


    OCR Scan     		PDF KM48S32230A 256Mbit 10/AP

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M X 8Bit X 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,


    OCR Scan     		PDF KM48S32230A KM48S32230A

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM48S32230A 8M x 8Bit x 4 Banks Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V power supply The KM48S32230A is 268,435,456 bits synchronous high data • LVTTL compatible with multiplexed address rate Dynamic RAM organized as 8 x 8,392,608 words by 8 bits,


    OCR Scan     		PDF KM48S32230A KM48S32230A 10/AP

    km48s2020ct

    Abstract: S823B 4MX16 54-PIN u108h KM48S2020 44s16030
    Text: General Information CMOS DRAM A. Product Guide Component Density 16M 4th Part Number Org. KM44S4020CT 4Mx4 KM48S2020CT 2Mx8 KM416S1020CT 1Mx16 KM416S1021CT Speed G F *2 Package Avail. (TSOPII) LVTTL 4K 3.3 ±0.3 S/t-P/L/IO 8/H/L/10 44pin C/S c/s 2 Banks


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT KM44S16020BT KM48S8020BT KM416S4020BT KM416S4021BT KM44S160308T KM48S8030BT S823B 4MX16 54-PIN u108h KM48S2020 44s16030

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SDRAM KM416S16230A 4M X 16Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S64230A is 268,435,456 bits synchronous high data • JED EC standard 3.3V pow er supply rate Dynam ic RAM organized as 4 x 4,196,304 w ords by 16


    OCR Scan     		PDF KM416S16230A 16Bit 44S64230A 10/AP

    KMM366S424BTL-G0

    Abstract: KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT
    Text: TABLE OF CONTENTS | I. General Information A. Product Guide Component B. Product Guide (Module) C. Ordering information II. Component Specifications A. 16M SDRAM (C-die) - Datasheets • KM44S4020CT • 4Mx4 with 2Banks 25 • KM48S2020CT .


    OCR Scan     		PDF KM44S4020CT KM48S2020CT KM416S1020CT KM416S1021CT 1Mx16 KM44S16020BT KM48S8020BT KM416S4020BT ------------------------------------16Mx4 4Mx64 KMM366S424BTL-G0 KMM466S824BT2F0 KMM466S424BT-F0 KMM466S824BT2-F0 4MX16 16MX8 KM44S4020CT KM48S2020CT