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Samsung Semiconductor KM416V4104AS6 4M X 16 EDO DRAM EDO DRAM, 4MX16, 60ns, CMOS, PDSO50
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KM416V4104A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DMA5 Abstract: tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509 Text: 2 3 4 GND GND GND GND 3,5 3,5 3,5 D_RAS2# D_CAS3# D_CAS2# 3,5 D_MWEB# 26 39 45 50 KM416V4104A TSOP50 GND RAS# UCAS# LCAS# OE# W# NC NC NC NC NC NC DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 DQ7 DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 VCC VCC VCC VCC GND GND GND GND 2 3 4 5	Original	PDF	MA10/0 MA11/1 4mx16 1mx16 0603B 0603B DMA5 tsop50 MD50 U-509 SO-DIMM 144-pin KM416V4104A U5-12 U509
MITAC schematic Abstract: mitac 5033 Trident Cyber9385 CCS C TOUCHPAD CIRCUIT CLPD6701 MITAC SO-DIMM 144-pin trident schematic keyboard and touchpad schematic ha7 msd Text: 5033 Circuit Diagram Index Table Sheet# 01 02 03 04 05 06 07 08 09 10 11 12 13 Description Jumper Settings CPU MTXC Cache Memory Clock Synthesizer and Driver PIIX4 Primary IDE and G.Pad Connector Trident 9385 Video Memory Bank 0 LCD Connector PCMCIA Controller	Original	PDF	ESS1869 SW501-1 VMD43 VMD44 VMD45 VMD46 VMD47 VMD48 VMD49 ------------------------------------VMD50 MITAC schematic mitac 5033 Trident Cyber9385 CCS C TOUCHPAD CIRCUIT CLPD6701 MITAC SO-DIMM 144-pin trident schematic keyboard and touchpad schematic ha7 msd
KM48S2020CT-G10 Abstract: hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30 Text: R E L I A B I L I T Y A N D 6 C O M P A T I B I L I T Y Reliability and Compatibility Price is not an issue, make sure the one you are having with excellent reliability and compatibility. T o insure the product quality, the rigorous tested before product shipping is	Original	PDF	10BaseT 100BaseTx XJ4336J FMC-560 3C563C-TP APA-1460A PRD-250WN KM48S2020CT-G10 hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30
KM416V4104AS Abstract: No abstract text available Text: KM416V4104AS CMOS D R A M ELECTRONICS 4 M x 1 6 B i t CMOS Dynamic HAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,	OCR Scan	PDF	KM416V4104AS 4Mx16 D033TbS KM416V4104AS
KM416V4104A Abstract: No abstract text available Text: KM416V4004A, KM416V4104A CMOS DRAM 4M x 16Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. ,	OCR Scan	PDF	KM416V4004A, KM416V4104A 16Bit 4Mx16 KM416V4104A
1004CL Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32 Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -\|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H \| KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-\| OOBKU/BKUG3-7	OCR Scan	PDF	KMM5321200BW/BWG-6 5321200BW/BWG-' KMM5361203BW/8 KMM5322200BW/BWG-6 KMM5322100BKU/BKUG-5 MM5361203BW/BWG-7 KMM5322200BW/BWG-7 2MX32 KMM5322100BK 2Mx36 1004CL 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM332F804AS/AZ-L KMM332F804AS/AZ-L EDO Mode 8M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F804A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F804A	OCR Scan	PDF	KMM332F804AS/AZ-L KMM332F804AS/AZ-L 4MX16, KMM332F804A 8Mx32bits 4Mx16bits 72-pin
KM416V4104AS Abstract: No abstract text available Text: KMM466F404AS1-L ELECTRONICS DRAM Module KMM466F404AS1 -L EDO Mode without buffer 4Mx64 based on 4Mx16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F404AS1-L is a 4M bit x 64 • Part Identification Dynamic RAM high density memory module. The	OCR Scan	PDF	KMM466F404AS1-L KMM466F404AS1 4Mx64 4Mx16, KMM466F404AS1-L 4Mx16bit 50-pin 400mil 144-pin KM416V4104AS
KM416V4104AS-L Abstract: No abstract text available Text: DRAM MODULE KMM332F404AS/AZ-L KMM332F404AS/AZ-L EDO Mode 4M x 32 DRAM SODIMM Using 4MX16, 4K Refresh, 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F404A is a 8Mx32bits Dynamic RAM Part Identification high density memory module. The Samsung KMM332F404A	OCR Scan	PDF	KMM332F404AS/AZ-L KMM332F404AS/AZ-L 4MX16, KMM332F404A 8Mx32bits 4Mx16bits 72-pin KM416V4104AS-L
KM44C16100A Abstract: km44c16000 Text: MEMORY ICs D e n s ity 64M bit O r* D *IUAA. rVwVr 16Mx4 5V±10% 3.3V+0.3V FUNCTION GUIDE Baokaou. P u rrN o m ta r. KM44C16000A# Fast Page 8K K : 32 Pin SOJ [400mil] KM44C16100A# Fast Page(4K) S : 32 pin TSOP ll(Forward) KM44C16004A# EDO(8K) KM44C16104A#	OCR Scan	PDF	KM44C16000A# KM44C16100A# KM44C16004A# KM44C16104A# 400mil] 16Mx4 KM44V16000A# KM44V16000A KM44V16100A# KM44C16100A km44c16000
KM416C60-7 Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7 Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6\|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55	OCR Scan	PDF	KM41C1000D-6 KM41C1000D-7 KM41C1000D-8 KM41C1000D-L6 KM41C1000D-L7 KM41C1000D-L8 KM48C124-55 KM48C124-6 KM416C60-6 KM416C64-6 KM416C60-7 KM48C2104B KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
km44c2560 Abstract: KM48V2104B-6 KM44C16004A-5 Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8	OCR Scan	PDF	KM41C1000D-6 KM41C1000D-L6 KM41C1000D-7 KM41C1000D-L7 KM44C256D-7 KM44C256D-L7 KM41C1000D-8 258KX4 KM44C2560-6 km44c2560 KM48V2104B-6 KM44C16004A-5
KM416V4104AS Abstract: No abstract text available Text: DRAM MODULE KMM466F804AS1 -L KMM466F804AS1-L EDO Mode 8M x 64 DRAM SODIMM Using 4Mx16, 4K Refresh 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM466F804AS1-L is a 8Mx64bits Dynamic RAM high density memory module. The - KMM466F804AS1 -L 4096 cycles/128ms, TSOP, L-ver	OCR Scan	PDF	KMM466F804AS1 KMM466F804AS1-L 4Mx16, 8Mx64bits 4Mx16bits 400mil 144-pin KM416V4104AS