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    KM41C16000 Search Results

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    KM41C16000 Price and Stock

    Samsung Semiconductor KM41C16000BK-6

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    Bristol Electronics KM41C16000BK-6 195
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    Samsung Semiconductor KM41C16000CK-60

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    Quest Components KM41C16000CK-60 3,276
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    Samsung Semiconductor KM41C16000CK-6

    16MX1 FAST PAGE DRAM, 60NS, PDSO24
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    Quest Components KM41C16000CK-6 2,633
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    KM41C16000CK-6 32
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    Samsung Semiconductor KM41C16000AS-7

    IC,DRAM,FAST PAGE,16MX1,CMOS,TSOP,26PIN,PLASTIC
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    Quest Components KM41C16000AS-7 195
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    Samsung Semiconductor KM41C16000BS-6

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    Quest Components KM41C16000BS-6 122
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    KM41C16000 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM41C16000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM41C16000-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16000-6 Samsung Electronics 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C16000-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16000-7 Samsung Electronics 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C16000-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16000-8 Samsung Electronics 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode Scan PDF
    KM41C16000CK-5 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CK-6 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CK-L-5 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CK-L-6 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CS-5 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CS-6 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CS-L-5 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000CS-L-6 Samsung Electronics 16M x1-Bit CMOS Dynamic RAM with Fast Page Mode Original PDF
    KM41C16000L-6 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16000L-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM41C16000L-8 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    KM41C16000 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    41C16000

    Abstract: No abstract text available
    Text: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C16000 130ns 150ns 10OfxF 24-LEAD 41C16000 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 1 C 1 6 00 0 A /A L 7 A L L7 A S L is a high • Performance range: tRAC tCA C KM41C16000A/AL/ALL'ASL-5 50ns 13ns 90ns


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    KM41C16000A/AL/ALL/ASL KM41C16000A/AL/ALL KM41C1 000A/AL 110ns KM41C16000A/AL/ALL/ASL-7 KM41C1600 150ns 130ns 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time(-5,


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    KM41C16000A, KM41V16000A 16Mx1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C16000 cycles/64m 16000J PDF

    K/KM41C16000B

    Abstract: No abstract text available
    Text: KM41C16000B, KM41V16000B CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM41C16000B, KM41V16000B 16Mx1 K/KM41C16000B PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C16000 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 0 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized tor high perform ance applications


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    KM41C16000 24-LEAD PDF

    KM41C16000A

    Abstract: No abstract text available
    Text: KM41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc KM41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns KM41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns KM41C16000A/AL/ALL/ASL-7


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    KM41C16000A/AL/ALL/ASL 110ns 130ns 150ns 41C16000A 41C16000A/AL/ALL7ASL 6000A/AL/ALL/ASL 24-LEAD 300MIL, KM41C16000A PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin


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    KMM5816000/T 16Mx8 KMM5816000-6 KMM5816000-7 KMM5816000-8 KMM5816000/T KM41C16000H' 24-pin 30-pin PDF

    TAA 691

    Abstract: No abstract text available
    Text: KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consumption(Normal or Low power) and


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    KM41C16000C, KM41V16000C 16Mx1 reliabilityV16000C 300mil TAA 691 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM41C16000L-6 • • • • • • • • • • Í rac tcAc I rc 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns


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    KM41C16000L KM41C16000L-6 110ns 130ns KM41C16000L-8 KM41C16000L-7 150ns cycles/256ms KM41C16000L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CM OS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode CM O S DRAMs. Fast Page M ode o ffe rs high speed random a cce ss of m em ory cells w ithin the sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,


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    KM41C16000A, KM41V16000A 16Mx1 PDF

    KM41C16000L-8

    Abstract: No abstract text available
    Text: CMOS DRAM KM41C16000L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • • -I rac tcAc ÍRC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8


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    KM41C16000L KM41C16000L-6 KM41C16000L-7 KM41C16000L-8 110ns 130ns 150ns KM41C16000L KM41C16000L-8 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • • • I rc tRAC tcAC KM41C16000L-6 60ns 15ns 110ns KM41C16000L-7 70ns 20ns 130ns KM41C16000L-8 80ns 20ns


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    KM41C16000L KM41C16000L-6 KM41C16000L-7 KM41C16000L-8 110ns 130ns 150ns KM41C16000L PDF

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


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    51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 PDF

    31A11

    Abstract: KM41C16000A A91E
    Text: KM41C16000A, KM41V16000A CMOS DRAM 1 6 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fa m ily of 16,777,216 x 1 bit Fast Page M ode C M O S DRA M s. Fast Page M ode o ffe rs high speed random acce ss o f m em ory celis within th e sam e row. Pow er supply voltage + 5.0V o r +3.3V , access tim e(-5,


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    KM41C16000A, KM41V16000A 16Mx1 31A11 KM41C16000A A91E PDF

    KM41C16000

    Abstract: TAA 691
    Text: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: KM 41C 16000-6 • • • • • • • • • • tR A C tC A C tR C 60n6 15ns 1 10ns KM 41C 16000-7 70ns 20ns 130ns KM 41C 160 0 0-8


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    KM41C16000 130ns 150ns 24-LEAD KM41C16000 TAA 691 PDF

    KMM5916000

    Abstract: No abstract text available
    Text: KMM5916000/T DRAM MODULES 16 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5916000/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung KMM5916000/T consist of nine KM41C16000rr DRAMs


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    KMM5916000/T KMM5916000-6 KMM5916000-7 KMM5916000-8 110ns 130ns 150ns KMM5916000/T KM41C16000rr KMM5916000 PDF

    Untitled

    Abstract: No abstract text available
    Text: b?E J> • SAMSUNG ELECTRONICS INC 7 ^ 4 1 4 2 Dülfc.023 T32 « S U C K KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Perform ance range: KM 41C 16000-6 • • • • • • • • • • tRAC


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    KM41C16000 130ns 150ns 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E T> 7^11+2 0 0 1 b 0 3 cï 3 T T « S N Ö K CMOS DRAM KM41C16000L 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C16000L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­


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    KM41C16000L KM41C16000L KM41C16000L-6 KM41C16000L-7 130ns KM41C16000L-8 110ns 150ns an00L 47/iF PDF

    A302V

    Abstract: KM41C16000B K/KM41C16000B
    Text: KM41C16000B, KM41V16000B CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM41C16000B, KM41V16000B 16Mx1 A302V KM41C16000B K/KM41C16000B PDF

    41C16000

    Abstract: 41C16000-6 AEE16 KM41C16000-6
    Text: KM41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


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    KM41C16000 41C16 24-LEAD 41C16000 41C16000-6 AEE16 KM41C16000-6 PDF

    dram simm memory module samsung 30-pin 16M

    Abstract: 16M 30-pin SIMM
    Text: KMM5816100/T DRAM MODULES 1 6 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816100/T is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816100/T consist of eight KM41C16000J/T DRAMs


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    KMM5816100/T KMM5816100-6 KMM5816100-7 KMM5816100-8 110ns 130ns 150ns KMM5816100/T KM41C16000J/T dram simm memory module samsung 30-pin 16M 16M 30-pin SIMM PDF

    cbf 495

    Abstract: 13T3A
    Text: KM41C16000C, KM41V16Q00C CMOS DRAM 16Mx1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time {-5 or -6), power consumption(Normal or Low power) and


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    KM41C16000C, KM41V16Q00C 16Mx1Bit 16Mx1 cbf 495 13T3A PDF

    Untitled

    Abstract: No abstract text available
    Text: KM41C16000C, KM41V16000C CMOS DRAM 16M x1Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consumption(Normal or Low power) and


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    KM41C16000C, KM41V16000C 16Mx1 reliabilityV16000C 300mil PDF