41C16000

Contextual Info: 41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

41C16000

Contextual Info: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung

1mx1 DRAM

Abstract: taa 723 KM41C16100-6 KM41C16100-7 KM41C16100-8
Contextual Info: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

44C16104A

Abstract: 44c16104
Contextual Info: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and

Contextual Info: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed C M OS 1 6 ,7 7 7 ,2 1 6 X 1 Dynam ic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications

Contextual Info: 41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAC tnc 41C16100L-6 60ns 15ns 110ns 41C16100L-7 70ns 20ns 130ns 41C16100L-8 80ns

Contextual Info: SAMSUNG ELECTRONICS INC b?E D • TTbMiME D D l b U T 41C16002 4TE «SriG K CMOS DRAM 16Mx1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 41C16002 is a high speed CMOS 16,777,216 bit x 1 Dynam ic Random A ccess Memory. Its

Contextual Info: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

41C16100-7

Contextual Info: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications

233Q

Contextual Info: 41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications

KM41C16000A

Contextual Info: 41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc 41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns 41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns 41C16000A/AL/ALL/ASL-7

41C16256

Abstract: IS41C16256 ir remot remot control
Contextual Info: ISS! 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION FEATURES The IS S I 41C16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. The 41C16256 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single

41C16100

Abstract: 24-PIN 41C16000
Contextual Info: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS

a6dc

Contextual Info: 41C16002A CMOS DRAM 16M x 1Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Static Column Mode CMOS DRAMs. Static Column Mode offers high speed random access of memory cells within the same row. Access time -5, -6, -7 or -8 and package

41C16100

Contextual Info: CMOS DRAM 41C16100 16M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications

irp 540

Contextual Info: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The

km44c16104ak

Abstract: 44c16104
Contextual Info: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs

1004CL

Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Contextual Info: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

intel 82c51

Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
Contextual Info: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160

Contextual Info: 41C16000C, KM41V16000C CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consum ption(Norm al or Low power) and

Contextual Info: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S 41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its

KMCJ532512

Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Contextual Info: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7

NEC D2732

Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Contextual Info: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256