Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    41C16 Search Results

    SF Impression Pixel

    41C16 Price and Stock

    Cornell Dubilier Electronics Inc 941C16P47K-F

    FILM CAPACITORS 1600V 0.47UF 10%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 941C16P47K-F Bulk 100 1
    • 1 $7.41
    • 10 $5.18
    • 100 $4.025
    • 1000 $4.025
    • 10000 $4.025
    		Buy Now
    Mouser Electronics 941C16P47K-F 69
    • 1 $7.09
    • 10 $6.15
    • 100 $4.79
    • 1000 $4.61
    • 10000 $4.61
    		Buy Now

    Amphenol CONEC 241C16080X

    CONN D-SUB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 241C16080X Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TDK Electronics B81141C1683K000

    CAP FILM 0.068UF 10% 440VAC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B81141C1683K000 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TDK Electronics B81141C1683M000

    CAP FILM 0.068UF 20% 440VAC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B81141C1683M000 Bulk
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    TDK Electronics B81141C1683M289

    CAP FILM 0.068UF 20% 440VAC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B81141C1683M289 Ammo Pack
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Find more 41C16 price and stock on Findchips.com

    41C16 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    41C16000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41C16100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    41C16257 Integrated Silicon Solution 256K x 16 (4-MBIT) DYNAMIC RAM WITH FAST PAGE MODE Original PDF

    41C16 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


    Original     		71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 PDF

    41C16000

    Abstract: No abstract text available
    Text: 41C16000 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16000 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C16000 130ns 150ns 10OfxF 24-LEAD 41C16000 PDF

    41C16000

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		16000/T 16Mx8 KMM5816000/T 5816000/T 41C16000/T 24-pin 30-pin KMM5816000-6 110ns KMM5816000-7 41C16000 PDF

    1mx1 DRAM

    Abstract: taa 723 KM41C16100-6 KM41C16100-7 KM41C16100-8
    Text: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


    OCR Scan     		KM41C16100 16MX1 KM41C16100-6 KM41C16100-7 130ns KM41C16100-8 150ns cyclesf32ms KM41C16100 216X1 1mx1 DRAM taa 723 PDF

    44C16104A

    Abstract: 44c16104
    Text: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and


    OCR Scan     		M53632004A M53632004AK/AKG 16Mx4 16Mx1 32Mx36bits M53632004AK cycles/64ms 53632004AKG 44C16104A 44c16104 PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 4 1 C 1 6 1 0 0 is a high speed C M OS 1 6 ,7 7 7 ,2 1 6 X 1 Dynam ic Random A ccess M em ory. Its design is optim ized fo r high perform ance applications


    OCR Scan     		KM41C16100 130ns 150ns 24-LEAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: • • • • • • • • • • tRAC tcAC tnc 41C16100L-6 60ns 15ns 110ns 41C16100L-7 70ns 20ns 130ns 41C16100L-8 80ns


    OCR Scan     		KM41C16100L KM41C16100L-6 110ns KM41C16100L-7 130ns KM41C16100L-8 150ns cycles/256ms KM41C16100L PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • TTbMiME D D l b U T 41C16002 4TE «SriG K CMOS DRAM 16Mx1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung 41C16002 is a high speed CMOS 16,777,216 bit x 1 Dynam ic Random A ccess Memory. Its


    OCR Scan     		KM41C16002 16Mx1 KM41C16002 KM41C16002-6 110ns KM41C16002-7 130ns KM41C16002-8 150ns PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,77 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C16100 130ns 150ns 24-LEAD PDF

    41C16100-7

    Abstract: No abstract text available
    Text: 41C16100 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized tor high performance applications


    OCR Scan     		KM41C16100 41C16 24-LEAD 41C16100-7 PDF

    233Q

    Abstract: No abstract text available
    Text: 41C16100L CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung 41C16100L is a CMOS high speed 16,777,216 x 1 Dynamic Random Access Memory. Its de­ sign is optimized for high performance applications


    OCR Scan     		KM41C16100L KM41C16100L-6 KM41C16100L-7 KM41C16100L-8 110ns 130ns 150ns KM41C16100L 233Q PDF

    KM41C16000A

    Abstract: No abstract text available
    Text: 41C16000A/AL/ALL/ASL CMOS DRAM 16M x 1 Bit C M O S Dynamic R A M with Fast Page M ode FEATURES GENERAL DESCRIPTION • Performance range: tRA C tC A C tnc 41C16000A/AL/ALL/ASL-5 50ns 13ns 90ns 41C16000A/AL/ALI7ASL-6 60ns 15ns 110ns 41C16000A/AL/ALL/ASL-7


    OCR Scan     		KM41C16000A/AL/ALL/ASL 110ns 130ns 150ns 41C16000A 41C16000A/AL/ALL7ASL 6000A/AL/ALL/ASL 24-LEAD 300MIL, KM41C16000A PDF

    41C16256

    Abstract: IS41C16256 ir remot remot control
    Text: ISS! 256K x 16 4-MBIT DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION FEATURES The IS S I 41C16256 is a 262,144 x 16-bit high-performance CMOS Dynamic Random Access Memory. The 41C16256 offers an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 512 random accesses within a single


    OCR Scan     		40-pin The755/ IS41C16256 16-bit IS41C16256-35K IS41C16256-35T 400-mil 41C16256 ir remot remot control PDF

    41C16100

    Abstract: 24-PIN 41C16000
    Text: MEMORY ICs D yn am ic R A M Capacity Continued Part Number 16M i FUNCTION GUIDE Organization Speed(ns) Features Technology Packages Remark * KM418V256ALLT 256K X 1B 70/80 CMOS Fast Page(3.3V) 40 Pin TSOP-ll(Forward) Now * KM418V256ALLTR 256K X 18 70/80 CMOS


    OCR Scan     		KM418V256ALLT KM418V256ALLTR KM416C157AJ KM416C157AZ KM416C157AT KM416C157ATR 416C157ALZ KM416C157ALT KM416C157ALTR KM416C157ALLZ 41C16100 24-PIN 41C16000 PDF

    Q022B

    Abstract: No abstract text available
    Text: DRAM MODULE KMM53616000AKG KMM53616000AK Fast Page Mode 16Mx36 DRAM SIMM, 4K Refresh, using 64M DRAM with 400 mil G EN ER AL DESCR IPTIO N FEATURES The Samsung KMM53616000AK is a 16M bit x 36 Dynamic RAM high density memory module. The • Part Identification


    OCR Scan     		KMM53616000AKG KMM53616000AK 16Mx36 16Mx4bit 32-pin 16Mx1bit 24-pin 72-pin Q022B PDF

    41C16100

    Abstract: No abstract text available
    Text: CMOS DRAM 41C16100 16M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 41C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its design is optimized for high performance applications


    OCR Scan     		KM41C16100 130ns 150ns 24-LEAD 41C16100 PDF

    irp 540

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5916000A/AT Fast Page Mode 16Mx9 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G E N E R A L DESC RIPTIO N The Samsung KMM5916000A is a 16M bit x 9 FEATURES • Performance Range: Dynamic RAM high density memory module. The


    OCR Scan     		KMM5916000A/AT 16Mx9 KMM5916000A 16Mx1bit 24-pin 30-pin irp 540 PDF

    km44c16104ak

    Abstract: 44c16104
    Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs


    OCR Scan     		KMM53616004AK/AKG KMM53616004AK/AKG 16Mx4 16Mx1, 3616004A 16Mx36bits M53616004AK cycles/64ms M53616004AKG km44c16104ak 44c16104 PDF

    1004CL

    Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
    Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page


    OCR Scan     		KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP PDF

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100 PDF

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


    OCR Scan     		51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 PDF

    Untitled

    Abstract: No abstract text available
    Text: 41C16000C, KM41V16000C CMOS DRAM 16M x1 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a fam ily of 16,777,216 x 1 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time (-5 or -6), power consum ption(Norm al or Low power) and


    OCR Scan     		KM41C16000C, KM41V16000C 16Mx1 300mil PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h ?E D WÊ 7^b414S 41C16100 GOlbGSS 54 2 CMOS DRAM 16 M X 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M 4 1C 16100 is a high speed CMOS 1 6 ,7 7 7 ,2 1 6 X 1 Dynamic Random Access Memory. Its


    OCR Scan     		b414S KM41C16100 130ns 150ns 10OfiF 7Tb4142 24-LEAD PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF