Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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Original
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KMM372C804BS
KMM372C804BS
4Mx16
KMM372C804B
8Mx72bits
KMM372C804B
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C804CS DRAM MODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C804CS KMM372C804CS DRAM MODULE
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Original
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KMM372C804CS
8Mx72
4Mx16
KMM372C804CS
KMM372C804C
8Mx72bits
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PDF
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DQ69
Abstract: KMM372C400CK KMM372C400CS KMM372C410CK KMM372C410CS
Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE KMM372C400CK/CS & KMM372C410CK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C40 1 0C is a 4Mx72bits Dynamic RAM high density memory module. The Samsung
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Original
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KMM372C400CK/CS
KMM372C410CK/CS
KMM372C410CK/CS
4Mx72
KMM372C40
4Mx72bits
300mil
16bits
DQ69
KMM372C400CK
KMM372C400CS
KMM372C410CK
KMM372C410CS
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PDF
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KMM372C804BS
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS -1 to +7.0 -1 to +7.0
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Original
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KMM372C804BS
000DIA±
540Min)
150Max
81Max)
4Mx16
KMM372C804BS
-KM416C4100BS
KM44C4000CS
01Max
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PDF
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KMM364C410CK
Abstract: KMM364C410CS
Text: KMM364C400CK/CS KMM364C410CK/CS DRAM MODULE KMM364C400CK/CS & KMM364C410CK/CS with Fast Page Mode 4Mx64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C40 1 0C is a 4Mx64bits Dynamic RAM high density memory module. The Samsung
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Original
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KMM364C400CK/CS
KMM364C410CK/CS
KMM364C410CK/CS
4Mx64
KMM364C40
4Mx64bits
300mil
16bits
KMM364C410CK
KMM364C410CS
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C404CS DRAM MODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM372C404CS KMM372C404CS DRAM MODULE
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Original
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KMM372C404CS
4Mx72
4Mx16
KMM372C404CS
KMM372C404C
4Mx72bits
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PDF
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MS3211
Abstract: No abstract text available
Text: KMM372C400CK/CS KMM372C410CK/CS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol Rating Unit VIN, VOUT VCC Tstg PD IOS
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Original
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KMM372C400CK/CS
KMM372C410CK/CS
Symbol36
150Max
81Max)
08Min)
350Max
89Max)
KMM372C400CK/CS
KM44C4000CK,
MS3211
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM M ODULE Buffered 8Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C80 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.
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OCR Scan
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KMM372C804BS
8Mx72
4Mx16
KMM372C804B
8Mx72bits
4Mx16bits
113DIA
000DIA¡
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C400CK/CS K M M 3 7 2 C 4 1 OCK/ CS DRAM MODULE K M M 3 7 2 C 4 0 0 C K / C S & K MM3 72C 41 OCK/CS with Fast Page Mode 4Mx72 DRAM DIMM with ECC using 4Mx4, 4K & 2K Refresh, 5V FEATURES G E N E R A L DESCRI PTION The Sam sung KM M 372C40 1 0C is a 4M x72bits Dynamic
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OCR Scan
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KMM372C400CK/CS
4Mx72
372C40
x72bits
KMM372C40
cycles/64m
cycles/32m
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C404BS DRAM M ODULE Buffered 4Mx72 DIMM 4Mx16 & 4Mx4 base Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 7 2 C40 4B S Revision History Version 0.0 (Sept, 1 997) Removed two AC parameters t C A C P (a c c e s s time from CAS) and tA A P (a c c e s s time from c o l. addr.) in AC CHARACTERISTICS.
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OCR Scan
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KMM372C404BS
4Mx72
4Mx16
KMM372C404B
4Mx72bits
4Mx16bits
54Max)
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C404BS DRAM MODULE KMM372C404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C404B is a 4Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C404B consists of four 4Mx16bits & two 4Mx4bits CMOS DRAMs in
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OCR Scan
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KMM372C404BS
KMM372C404BS
4Mx16
KMM372C404B
4Mx72bits
4Mx16bits
400mil
168-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372C804BS DRAM MODULE KMM372C804BS Fast Page Mode 8M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C804B is a 8Mx72bits Dynamic RAM high density memory module. The Samsung KMM372C804B consists of eight 4Mx16bits & four 4Mx4bits CMOS DRAMs in
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OCR Scan
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KMM372C804BS
KMM372C804BS
4Mx16
KMM372C804B
8Mx72bits
4Mx16bits
400mil
168-pin
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PDF
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