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    Samsung Semiconductor KM6264BL7

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    Samsung Semiconductor KM6264BL-7

    IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
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    SEC KM6264BL-7

    IC,SRAM,8KX8,CMOS,DIP,28PIN,PLASTIC
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    SEC KM6264BL7L

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    KM6264BL7 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM6264BL-7 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-7 Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF
    KM6264BL-7L Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    KM6264BL-7L Samsung Electronics 8K x 8 Bit High Speed CMOS Static RAM Scan PDF

    KM6264BL7 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KM6264BL-10

    Abstract: samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAIM »¡SAMSUNG Electronics 11 MEMORY ICs »SElectronics SAMSUNG FUNCTION GUIDE MEMORY ICS sgSAMSUNG Electronics FUNCTION GUIDE 13 MEMORY ICs FUNCTION GUIDE *: N ew Product f: P relim inary P roduct f t : U nder D evelopm ent


    OCR Scan     		KMM591000C-6 KMM591000C-7 KMM591000C-8 KMM536256C/CG-7 KMM536256C/CG-8 New80 KM75C03AP-50 KM75C03AN-12 KM75C03AN-15 KM75C03AN-20 KM6264BL-10 samsung CMOS SRAM KMM591000 KM75C01 KM75C01AP80 KM75C03AJ-50 KM6264BL7 KM75C01AP-20 KM75C01AP-25 KM75C01AP-80 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100, 120 ns Max. • Low Power Dissipation Standby (CMOS): 10nW(Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) • Single 5V±10% Power Supply


    OCR Scan     		KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 7Tfci4142 PDF

    KM6264BL-10L

    Abstract: 6264bl km6264 6264 SRAM
    Text: KM6264BÜKM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) :10,«W (typ) LVersion : W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		KM6264BÃ KM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L KM6264BLVBL-L KM6264BL-10L 6264bl km6264 6264 SRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: KM6264B/KM6264BL/KM6264BL-L CMOS SRAM 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5fiW (typ.) LL-Version Operating: 55mW/MHz (max.) • Single 5V ± 10% Power Supply


    OCR Scan     		KM6264B/KM6264BL/KM6264BL-L 55mW/MHz KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit PDF

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


    OCR Scan     		KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL PDF

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


    OCR Scan     		010/J/T KM68512 12BKX8 km6865b PDF

    KM6264AL-10

    Abstract: sanyo LC3564PL KM6264-10 KM6264AL lc3664* sanyo KM6264AL10 KM6264-15 KMG2G km6264l-15 LC3564Q-10
    Text: - 88 64 K m £ tt fi & mw CC TAAC sax ns) TCAC •ax (ns) CMOS 7s A 7 f TOE ■ax (ns) TOH ■in (ns) TOD aax (ns) > / S t a t i c # R A M ( 81 9 2 x 8 ) TWP min (ns) TDS ■in (ns) TDH min (ns) TWD ■in (ns) TWR max (n;,) V D D or V C C (V) 28PIN M «


    OCR Scan     		28PIN HY6264L-12 HY6264L-15 IDT7164S/L-30 LC3564PL/PM-12L IC3564Q-70 LC3564Q-85 LC35G4Q-10 LC3664ALL/SLL/MLL-10 LC3664ALL/SLL/MLL-12 KM6264AL-10 sanyo LC3564PL KM6264-10 KM6264AL lc3664* sanyo KM6264AL10 KM6264-15 KMG2G km6264l-15 LC3564Q-10 PDF

    KM6264BL-10

    Abstract: KM6264BL-10L KM6264BL-12 DIP-600B KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10
    Text: KM6264BL / BL-L CMOS SRAM 8Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,1 0 0 , 120 ns Max. • Low Power Dissipation Standby (CMOS): 10|iW (Typ.) L Version 5(iW (Typ.) LL Version Operating : 55mW(Typ.) •Single 5V±10% Power Supply


    OCR Scan     		KM6264BL KM6264BLP/BLP-L 28-pin DIP-600B KM6264BLG/BLG-L OP-45Q KM6264BL/BL-L 536-bit 00217S4 KM6264BL-10 KM6264BL-10L KM6264BL-12 KM6264BL-7L 3A11 KM6264BL7L KM6264 52HA KM6264BL10 PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG E L E C T R O N I C S INC b7E » • T'ìbMlMS KM6264BL/KM6264BL-L GD17472 mg CMOS SRAM 8 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5(iW (typ.) LL-Version


    OCR Scan     		KM6264BL/KM6264BL-L GD17472 KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bitDUAL PDF

    KM416C256-7

    Abstract: KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L
    Text: MEMORY ICS 1. INTRODUCTION 1.1 Dynamic RAM iS SAM SUNG FUNCTION GUIDE MEMORY ICs — FUNCTION GUIDE 4M bit 4M X 1 KM41C4000A-7 - — KM41C4000AL-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7- KM41C4000ASL-8— KM41C4000ASL-10


    OCR Scan     		KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7----- KM41C4000ASL-8-- KM41C4000ASL-10 KM41C4001A-7 KM416C256-7 KM6264BL-10 KM416C256-10 KM75C01AP80 KM62256BL-10 KM75C02AJ-20 KM75C01AP-35 KM41C4000A KM68512L-7/7L PDF

    km6264

    Abstract: KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10
    Text: KM6264BUKM6264BL-L CMOS SRAM 8 K x 8 Bit Static R A M GENERAL DESCRIPTION FEATURES • Fast Access Time : 7 0 ,1 0 0 ,120ns Max. • Low Power Dissipation Standby (CMOS) : 10« W (typ) L.Version : 5// W (typ) LL.Version Operating:55mW/1 MHz • Single 5V±10% power supply


    OCR Scan     		KM6264BUKM6264BL-L 120ns 55mW/1 KM6264BLP/BLP-L 28-DIP-600B KM6264BLS/BLS-L 28-DIP-300 KM6264BLG/BLG-L OP-450 km6264 KM6264BL-10L KM6264BL10L 6264bl KM6264BLS SRAM 6264 m6264 KM6264BL-10 PDF

    KM6264BL-10L

    Abstract: KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L
    Text: CMOS SRAM KM6264BL/KM6264BL-L 8 K x 8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10nW (typ.) L-Version 5(iW (typ.) LL-Version Operating: 55mW /MHz (max.) • Single 5 V ± 1 0 % Power Supply


    OCR Scan     		KM6264BL/KM6264BL-L KM6264B/BL/BL-L: 28-pin KM6264BS/BLS/BLS-L: KM6264BG/BLG/BLG-L: KM6264B/BL/BL-L 536-bit KM6264BL-10L KM6264BL-10 KM6264BL-7 KM6264BL7L KM6264BL7 KM6264BL-7L PDF

    AG10

    Abstract: km416c256 1m maskrom KM68B1002-10
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM sg SA M SU N G Electronics 11 MEMORY ICs — 4M bit FUNCTION GUIDE 4M X 1 KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 — KM41C4000ASL-7 — KM41C4000ASL-8 - KM41C4000ASL-10


    OCR Scan     		KM41C4000A-7 KM41C4000A-8 KM41C4000A-10 KM41C4000AL-7 KM41C4000AL-8 KM41C4000AL-10 KM41C4000ASL-7 KM41C4000ASL-8 KM41C4000ASL-10 KM41C4001A-7 AG10 km416c256 1m maskrom KM68B1002-10 PDF