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    KM68V1OOOB Search Results

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    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3,uW(Typ.) L-Versron 1.5^iWfTyp.) LL-Version Operating


    OCR Scan     		PDF KM68V1OOOBL/BL-L 100ns KM68V1 32-SOP-525 KM68V1000BLT/BLT-L 32-TSOP KM68V1000BLR/BLR-L 576-bit

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM68V1OOOBL/BL-L CMOS SRAM 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//WfTyp.) L-Version 1.5^WfTyp.) LL-Version Operating


    OCR Scan     		PDF KM68V1OOOBL/BL-L 100ns KM68V1 32-SOP-525 KM68V1000BLT/BLT-L 32-TSOP KM68V1OOOBLR/BLR-L KM68V1000BL/BL-L 576-bit

    KM68U1000B

    Abstract: KM68V1000B
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM GENERAL DESCRIPTION FEATURE SUMMARY • Process Technology: 0.6 um CMOS • Organization : 128Kx8 • Power Supply Voltage KM68V1000B fa m ily : 3.3V +/- 0.3V KM68U1000B family : 3.0V +/- 0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 128Kx8 KM68V1000B 32-SOP, 32-TSOP

    Untitled

    Abstract: No abstract text available
    Text: KM68V1000BLI / Ll-L CMOS SRAM 128Kx8 Bit Low Voltage & Industrial Temperature Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100ns max. • Low Power Dissipation S tandby(C M O S ): 360nW (max.)L-Version


    OCR Scan     		PDF KM68V1000BLI 128Kx8 100ns 360nW 144mW V1000BLGl/BLGl-L: 525mil) KM68V1000BLTI/BLTI-L 68V1000BLRI/BLRI-L: D0E13b7

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM KM68V1 OOOBL/BL-L 131,072 WORD x 8 Bit CMOS Static RAM Low Voltage Operation FEATURES GENERAL DESCRIPTION • Fast Access Time : 7 0 ,100ns Max. • Low Power Dissipation Standby (CMOS) : 3//W(Typ.) L-Version 1.5^W(Typ.) LL-Version Operating


    OCR Scan     		PDF KM68V1 100ns KM68V1000BLG/BLG-L 32-SOP-525 KM68V1OOOBLT/BLT-L 32-TSOP KM68V1000BLR/BLR-L KM68V1OOOBL/BL-L 576-bit

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    "30 pin simm"

    Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
    Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36


    OCR Scan     		PDF KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8Mx36 "30 pin simm" 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm

    KM68U1000BLG8L

    Abstract: 32SOP
    Text: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6» «CMOS • Organization : 128K x8 • Power Supply Voltage KM68V1000B family: 3.3V« *0.3V KM68U1000B family: 3.0V- -0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSOP KM68U1000BLG8L 32SOP

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM68V1000B, KM68U1000B Family 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process T ec h n o lo g y : 0.6 um C M O S T h e K M 6 8 V 1 0 0 0 B and K M 6 8 U 1 0 0 0 B fam ily are fabricated • O rg a n iz a tio n : 1 2 8 K x 8


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 DD23b66

    q0213

    Abstract: KM68V1000BLE a14cz
    Text: CMOS SRAM KM68V1000BLE / LE-L 128Kx8 Bit Low Voltage & Extended Temperature Operating SHAM FEATURES GENERAL DESCRIPTION 1Extended Temperature Range : -25 to 85°C ’ Fast Access Time : 70,100ns max. •Low Power Dissipation Standby(CMOS): 360p.W(max.)L-Version


    OCR Scan     		PDF KM68V1000BLE 128Kx8 100ns 360jiW 144mW KM68V1000BLGE/BLGE-L: 525mil) KM68V1000BLTE/BLTE-L KM68V1000BLRE/BLRE-L: KM68V1000BLE/BLE-L q0213 a14cz

    100NSL

    Abstract: 32SOP
    Text: KM68V1000B, KM68U1000B Family CMOS SRAM 128K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.6 im CMOS • Organization : 128K x8 • Power Supply Voltage : KM68V1000B family : 3.3V±0.3V KM68U1000B family : 3.0V±0.3V


    OCR Scan     		PDF KM68V1000B, KM68U1000B KM68V1000B 32-SOP, 32-TSOP1-082QF/R KM68V1OOOB 100NSL 32SOP

    A12CZ

    Abstract: KM68V1000BL
    Text: K M 68V 1000B L /L -L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • F a st A cce ss T im e : 7 0 ,1 0 0 n s m a x. • L ow P o w e r D issip atio n S ta n d b y(C M O S ): 1 8 0 |iW (m a x.)L -V e rsio n 5 4 ^ W (m a x .)L L -V e rs io n


    OCR Scan     		PDF KM68V1000BL 128Kx8 100ns 180nW 144mW KM68V1000BLG/BLG-L: 525mi! KM68V1000BLT/BLT-L KM68V1OOOBLR/BLR-L: KM68V1000BL/BL-L A12CZ

    Untitled

    Abstract: No abstract text available
    Text: KM68V1000BL/L-L CMOS SRAM 128Kx8 Bit Low Voltage Operating Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,100ns max. • Low Power Dissipation Standby(CMOS): 180|iW (m ax.) L-Version 54^W (max.)LL-Version Operating : 144mW (max.) • Single 3.0V ~ 3.6V Power Supply


    OCR Scan     		PDF KM68V1000BL/L-L 128Kx8 100ns 144mW KM68V1000BLG/BLG-L: 525mil) KM68V1000BLT/BLT-L KM68V1000BLR/BLR-L: KM68V1000BL/BL-L 576-bit

    KM68U1000BLG8L

    Abstract: KM68V1000BLG7L
    Text: KM68V1000B, KM68U1000B Family CMOS SRAM 128Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.6 um CMOS The KM 68V1000B and KM 68U1000B fam ily are fabricated • O rganization : 128K x8 by SAMSUNG'S advanced CM O S process technology.


    OCR Scan     		PDF KM68V1000B, KM68U1000B 128Kx8 KM68V1000B 32-SOP, 32-TSO 68V1000B 68U1000B KM68U1000BLG8L KM68V1000BLG7L