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    KMM466S1 Search Results

    KMM466S1 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KMM466S104CT-F0 Samsung Electronics 1M x 64 SRAM SODIMM Scan PDF
    KMM466S104CT-FL Samsung Electronics 1M x 64 SRAM SODIMM Scan PDF
    KMM466S1723T3-F0 Samsung Electronics KMM466S1723T3 16Mx64 Sdram Sodimm Based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs With SPD, Density(MB) = 128, Organization = 16Mx64, Bank/ Interface = 4B/LVTTL, Refresh = 4K/64ms, Speed = 10, #of Pin = 144, Power = F, Component Composition = ( Original PDF
    KMM466S1723T-F0 Samsung Electronics 16M x 64 SDRAM SODIMM based on 16M x 8, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF
    KMM466S1724T2-F0 Samsung Electronics 16M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAM with SPD Original PDF

    KMM466S1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    KMM466S1723AT3-F0

    Abstract: kmm466s1723
    Text: PC66 SODIMM KMM466S1723AT3 Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM466S1723AT3 16Mx8 KM48S16030AT KMM466S1723AT3-F0 kmm466s1723 PDF

    KMM466S1723AT2

    Abstract: No abstract text available
    Text: KMM466S1723AT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM466S1723AT2 16Mx8 KM48S16030AT KMM466S1723AT2 PDF

    KMM466S104CT-F0

    Abstract: KM416S1020CT-F10
    Text: KMM466S104CT 144pin SDRAM SODIMM Revision History Revision .2 Mar. 1998 •Some Parameters values & Characteristics of comp. level are changed as below : - Input leakage currents (Inputs) : ±5uA to ±1uA. - Input leakage currents (I/O) : ±5uA to ±1uA.


    Original     		KMM466S104CT 144pin 200mV. 2K/32ms 4K/64ms. KMM466S104CT 1Mx64 1Mx16, KMM466S104CT-F0 KM416S1020CT-F10 PDF

    KMM466S1724T2-F0

    Abstract: No abstract text available
    Text: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (September 1998) - Corrected the Part Number as KMM466S1724T2. REV. 3 Sept. '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2


    Original     		KMM466S1724T2 144pin KMM466S1724T2. KMM466S1724T2 16Mx64 8Mx16, KMM466S1724T2-F0 PDF

    KMM466S1723T-F0

    Abstract: No abstract text available
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7 REV. 3 August '98 Preliminary


    Original     		KMM466S1723T2 144pin KMM466S1723T 16Mx64 16Mx8, 400mil KMM466S1723T-F0 PDF

    KMM466S1723T3-F0

    Abstract: KMM466S1
    Text: KMM466S1723T3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQ0 ~ DQ7. REV. 2 August 1998 Preliminary 144pin SDRAM SODIMM KMM466S1723T3 KMM466S1723T3 SDRAM SODIMM


    Original     		KMM466S1723T3 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil KMM466S1723T3-F0 KMM466S1 PDF

    KMM466S1724T-F0

    Abstract: No abstract text available
    Text: KMM466S1724T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - Self refresh current (ICC6 ) is changed. REV. 2 April '98 Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD


    Original     		KMM466S1724T2 144pin KMM466S1724T 16Mx64 8Mx16, 400mil KMM466S1724T-F0 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM466S1724BT2 PC66 SODIMM Revision History Revision 0.0 July 5, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.


    Original     		KMM466S1724BT2 In466S1724BT2 078Min 00Min) 8Mx16 KM416S8030BT PDF

    Untitled

    Abstract: No abstract text available
    Text: PC66 SODIMM KMM466S1723AT2 KMM466S1723AT2 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION T he Sam sung KM M 466S1723AT2 is a 16M bit x 64 S ynchro­ • Perform ance range nous Dynam ic RAM high density m em ory m odule. The S am ­


    OCR Scan     		KMM466S1723AT2 KMM466S1723AT2 16Mx64 16Mx8, 466S1723AT2 466S1723AT2-F0/G Cycles/64m 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T2_144pin SDRAM SODIMM KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous


    OCR Scan     		KMM466S1723T2_ 144pin KMM466S1723T 16Mx64 16Mx8, KMM466S1723T-F0 100MHz 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. Correct DQ No. in Fuctionai Block Diagram. C hange DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM


    OCR Scan     		KMM466S1723T3_ 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pirt SDRAM SODIMM KMM466S1723T2 KMM466S1723T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM466S1723T2 KMM466S1723T 144pirt 16Mx64 16Mx8, 400mil 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S1724T2 KMM466S1724T SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 8Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SP GENERAL DESCRIPTION FEATURE The Samsung KMM466S1724T is a 16M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM466S1724T2 KMM466S1724T 144pin 16Mx64 8Mx16, 400mil 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. REV. 2 April '98 aJECTRONCS Preliminary KMM466S1724T2_ 144pin SDRAM SODIMM


    OCR Scan     		KMM466S1724T2_ 144pin KMM466S1724T 16Mx64 8Mx16, 400mil KMM466S1724T-F0 PDF

    KMM466S104BT-F0

    Abstract: No abstract text available
    Text: KMM466S104BT NEW JEDEC SDRAM MODULE KMM466S104BT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DR AM s with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104BT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung


    OCR Scan     		KMM466S104BT KMM466S104BT 400mil 144-pin 1Mx16 KMM466S104BT-F0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16, 4K Refresh, 3.3V Synchronous DRAMs with SPD FEATURE GENERAL DESCRIPTION Perform ance range The Sam sung KM M 466S 104C T is a 1M bit x 64 Synchronous


    OCR Scan     		144pin KMM466S104CT KMM466S104CT 1Mx64 1Mx16, 100MHz 400mil 144-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 August '98 ELECTROMCS


    OCR Scan     		KMM466S1723T2 144pin KMM466S1723T2_ KMM466S1723T 16Mx64 16Mx8, KMM466S1723T-F0 PDF

    KMM466S104CT-F0

    Abstract: KMM466S104CT-FL
    Text: Preliminary 144pin SDRAM SODIMM KMM466S104CT KM M 466S104CT SDRAM SODIMM 1 M x64 SDRAM SO DIM M based on 1 M x16, 4K Refresh, 3.3V S ynchronous DRAM s with SPD FEATURE G ENERAL DESCRIPTION P e rfo rm a n c e ra n g e T h e S a m s u n g K M M 4 6 6 S 1 0 4 C T is a 1 M bit x 6 4 S y n c h ro n o u s


    OCR Scan     		KMM466S104CT KMM466S104CT 144pin KMM466S104CT-F0 KMM466S104CT-FL PDF

    KMM466S1723T-F0

    Abstract: No abstract text available
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh current (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 A u gust '98 ELECTROMC8


    OCR Scan     		KMM466S1723T2 144pin KMM466S1723T 16Mx64 16Mx8, 400mil KMM466S1723T-F0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctionai Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTRCMCS Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM


    OCR Scan     		KMM466S1723T3_ 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil PDF

    KMM466S1723T3-F0

    Abstract: No abstract text available
    Text: KMM466S1723T3 Preliminary 144pin SDRAM SODIMM Revision History Revision 2 August 1998 1. C orrect DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7. REV. 2 August 1998 ELECTROMC8 This Material Copyrighted By Its Respective Manufacturer Preliminary


    OCR Scan     		KMM466S1723T3 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil KMM466S1723T3-F0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KMM466S1723T3_ 144pin SDRAM SODIMM KMM466S1723T3 SDRAM SODIMM 16Mx64 SDRAM SODIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S1723T3 is a 16M bit x 64 Synchro­


    OCR Scan     		KMM466S1723T3_ 144pin KMM466S1723T3 16Mx64 16Mx8, 400mil 144-pin KMM466S1723T3-F0 PDF

    Untitled

    Abstract: No abstract text available
    Text: KMM466S1723T2 Preliminary 144pin SDRAM SODIMM Revision History Revision .1 April 1998 - S elf refresh curre nt (ICC6) is changed. Revision .3 (August 1998) - Correct DQ No. in Fuctional Block Diagram. Change DQ8 ~ DQ15 to DQO ~ DQ7 REV. 3 August '98 ELECTRCMCS


    OCR Scan     		KMM466S1723T2 144pin KMM466S1723T2_ KMM466S1723T 16Mx64 16Mx8, 400mil PDF