KMM466S424CT
Abstract: KMM466S424CT-F0
Text: Preliminary 144pin SDRAM SODIMM KMM466S424CT KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424CT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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144pin
KMM466S424CT
KMM466S424CT
4Mx64
4Mx16,
400mil
144-pin
KMM466S424CT-F0
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Untitled
Abstract: No abstract text available
Text: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7, 1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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KMM466S424DT
4Mx16
KM416S4030DT
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KM416S4030BT-F10
Abstract: KM416S4030BT Kmm466S424bt KMM466S424BT-F0
Text: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristics of comp. level are changed as below : - Input leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S424BT
144pin
66MHz
KM416S4030BT-F10
KM416S4030BT
Kmm466S424bt
KMM466S424BT-F0
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Untitled
Abstract: No abstract text available
Text: KMM466S424BT 14 4pm S D R A M S O D I M M Revi si on Hi story Revision .3 March 1998 • Some Parameter values & Chracteristics of comp, level are changed as below : -In p u t leakage Currents (Inputs) : ± 5uA to ± 1uA. Input leakage Currents (I/O) : ± 5uA to ± 1.5uA.
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KMM466S424BT
44pin
4Mx16
KM416S4030BT
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KMM466S4
Abstract: KMM466S404BT-FL
Text: Preliminary KMM466S404BT_ 144pin SDRAM SODIMM KMM466S404BT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S404BT is a 4M bit x 64 Synchronous
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KMM466S404BT_
144pin
KMM466S404BT
4Mx64
4Mx16,
466S404BT
144-pin
KMM466S4
KMM466S404BT-FL
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Untitled
Abstract: No abstract text available
Text: KMM466S424BT 144pin SDRAM SODIMM Revision History Revision .3 March 1998 Some Parameter values & Chracteristies of comp, level are changed as below : - Input leakage Currents (Inputs) : + 5uA to + 1uA. Input leakage Currents (I/O) : + 5 u A to + 1.5uA. - Cin to be measured at V DD = 3.3V, TA = 23 °C, f = 1 MHz, V REF = 1 .4V + 200 mV.
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OCR Scan
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PDF
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KMM466S424BT
144pin
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: KMM466S424DT PC66 SODIMM Revision History Revision 0.0 July 7,1999 • Changed tRDL from 1CLK to 2CLK in OPERATING AC PARAMETER. • Skip ICC4 value of CL=2 in DC characteristics in datasheet. • Define a new parameter of tDAL( 2CLK +20ns), Last data in to Active delay in OPERATING AC PARAMETER.
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OCR Scan
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PDF
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KMM466S424DT
4Mx16
KM416S4030DT
7U4142
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Untitled
Abstract: No abstract text available
Text: 144pin SDRAM SODIMM KMM466S424BT Revision History Revision .3 March 1998 Som e Param eter values & C hracteristics of com p, level are changed as below : - Input leakage C urrents (Inputs) : ± 5uA to ± 1uA. Input leakage C urrents (I/O) : ± 5uA to ± 1,5uA.
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OCR Scan
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PDF
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KMM466S424BT
144pin
4Mx16
KM416S4030BT
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous
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OCR Scan
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KMM466S424CT_
144pin
KMM466S424CT
4Mx64
4Mx16,
144-pin
M466S424CT
416S4030BT
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37L34
Abstract: KMM466S404AT-F0
Text: NEW JEDEC SDRAM MODULE KMM466S404AT KMM466S404AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S404AT is a 4M bit x 64 Synchronous - Performance range Max Freq. Speed
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KMM466S404AT
KMM466S404AT
4Mx64
4Mx16,
400mil
144-pin
37L34
KMM466S404AT-F0
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Untitled
Abstract: No abstract text available
Text: KMM466S424AT NEW JEDEC SDRAM MODULE KMM466S424AT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424AT is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM466S424AT
KMM466S424AT
4Mx64
4Mx16,
400mil
144-pin
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Untitled
Abstract: No abstract text available
Text: KMM466S424BT 144pin SDRAM SODIMM KMM466S424BT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S424BT Is a 4M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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OCR Scan
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PDF
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KMM466S424BT
KMM466S424BT
144pin
4Mx64
4Mx16,
400mll
144-pin
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Untitled
Abstract: No abstract text available
Text: Preliminary KMM466S424CT_ 144pin SDRAM SODIMM KMM466S424CT SDRAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Sam sung KM M 466S 424C T is a 4M bit x 64 Synchronous
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OCR Scan
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PDF
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KMM466S424CT_
144pin
KMM466S424CT
4Mx64
4Mx16,
144-pin
M466S424CT
416S4030BT
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Untitled
Abstract: No abstract text available
Text: P r e l i mi n a r y K M M 4 6 6 S 4 0 4 B T _ 144pi n S D R A M S O D I M M K M M 4 6 6 S 4 0 4 B T SD RAM SODIMM 4Mx64 SDRAM SODIMM based on 4Mx16, 2Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD G E NE R AL DESCRIPTION
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144pi
4Mx64
4Mx16,
466S404BT
400mil
144-pin
KMM466S404BT
44pin
416S4020BT
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