Untitled
Abstract: No abstract text available
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1 . Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE210
65MHz
-100mA
KSE200
O-126
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE200
65MHz
100mA
KSE210
O-126
KSE200STSTU
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSH2955 KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE2955T
|
Original
|
KSH2955
KSE2955T
-500mA
KSE2955
-500mA
KSH2955ITU
O-251
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc=100mA • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage
|
OCR Scan
|
KSE200
65MHz
100mA
KSE210
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE2955T KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE2955T
O-220
|
PDF
|
KSE2955T
Abstract: KSH2955
Text: KSH2955 KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE2955T
|
Original
|
KSH2955
KSE2955T
-500mA
KSE2955T
KSH2955
|
PDF
|
LC 21 B
Abstract: KSE200 KSE210
Text: NPN EPITAXIAL SILICON TRANSISTOR KSE200 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc=100mA • C om plem ent to KSE210 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage
|
OCR Scan
|
KSE200
65MHz
100mA
KSE210
LC 21 B
KSE200
KSE210
|
PDF
|
KSE200
Abstract: KSE210 kse21
Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65 IC= -100 Complement to KSE200 { TO-126 ~ ABSOLUTE MAXIMUM RATINGS Rating Unit Collector- Base Voltage
|
Original
|
KSE210
KSE200
O-126
500mA
500mA,
200mA
100mA,
10MHz
KSE200
KSE210
kse21
|
PDF
|
kse2
Abstract: No abstract text available
Text: KSH2955 PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix • Straight Lead (I. PACK, “ -I “ Suffix) • Electrically Similar to Popular KSE2955
|
Original
|
KSH2955
KSE2955
-500mA
kse2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSH2955 PNP EPITAXIAL SILICO N TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Formed for Surface Mount Applications No Suffix . Straight Lead (i. PACK, * -I “ Suffix) • Electrically Similar to Popular KSE2955
|
OCR Scan
|
KSH2955
KSE2955
-500mA
-500mA,
500KHZ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE2955T KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE2955T
O-220
KSE2955T
KSE2955TTU
O-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz IC=100mA TO-126 • Complement to KSE210 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage
|
Original
|
KSE200
65MHz
100mA
KSE210
O-126
|
PDF
|
KSE2955T
Abstract: No abstract text available
Text: KSE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES TO-220 • High Current Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage
|
Original
|
KSE2955T
O-220
KSE2955T
|
PDF
|
KSE2955T
Abstract: No abstract text available
Text: KSE2955T KSE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz Min. TO-220 1 1.Base 2.Collector 3.Emitter PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE2955T
O-220
KSE2955T
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: KSE210 PNP EPITAXIAL SILICO N TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65ffiz @ lc= -IOO1A TO-126 Complement to K SE200 A BSO LU TE MAXIMUM RATINGS Rating
|
OCR Scan
|
KSE210
65ffiz
SE200
O-126
10MHz
100mA,
|
PDF
|
KSE200
Abstract: KSE210
Text: KSE200 KSE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA Min. • Complement to KSE210 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE200
65MHz
100mA
KSE210
O-126
KSE200
KSE210
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE210 PNP EPITAXIAL SILICON TRANSISTOR COL LECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fr=65MHz lc= -100mA TO -126 Complement to KSE200 ABSOLUTE MAXIMUM RATINGS Rating Unit
|
OCR Scan
|
KSE210
65MHz
-100mA
KSE200
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High Current Gain-Bandwidth Product tT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit Collector-Base Voltage C haracteristic VcBO Symbol
|
OCR Scan
|
KSE2955T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE200 POWER TR CD-ROM Edition.1.1 This Data Sheet is subject to change without notice. Page : 1 (KSE200) (C) 1994 Samsung Electronics Printed in Korea. KSE200 POWER TR CD-ROM(Edition.1.1) This Data Sheet is subject to change without notice. Page : 2 (KSE200)
|
Original
|
KSE200
KSE200)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSH2955 KSH2955 General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • • • • • Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ -I “ Suffix) Electrically Similar to Popular KSE2955T
|
Original
|
KSH2955
KSE2955T
-500mA
|
PDF
|
KSE200
Abstract: KSE210
Text: PNP EPITAXIAL SILICON TRANSISTOR KSE210 COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION SATURATION VOLTAGE HIGH CURRENT GAIN-BANDWIDTH PRODUCT-MIN fT=65MHz lc= -100mA C om plem ent to KSE200 ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage
|
OCR Scan
|
KSE210
65MHz
-100mA
KSE200
VC100
KSE200
KSE210
|
PDF
|
KSE2955T
Abstract: 500KHZ
Text: KSE2955T PNP SILICON TRANSISTOR GENERAL PURPOSE AND SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES • High C urrent G ain-Bandw idth Product f j = 2M Hz (MIN ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector-B ase Voltage Characteristic
|
OCR Scan
|
KSE2955T
O-220
-200mA,
-500mA
500KHZ
300ns,
KSE2955T
500KHZ
|
PDF
|
KSE200
Abstract: KSE210
Text: KSE210 KSE210 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA Min. • Complement to KSE200 TO-126 1 1. Emitter 2.Collector 3.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted
|
Original
|
KSE210
65MHz
-100mA
KSE200
O-126
KSE200
KSE210
|
PDF
|
Untitled
Abstract: No abstract text available
Text: KSE200 NPN EPITAXIAL SILICON TRANSISTOR COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE HIGH CURREN T GAIN-BANDWIDTH PRODUCT-MIN fT=65MBz @lc=100nA TO-126 Complement to KSE210 ABSO LUTE MAXIMUM RATINGS Characteristic Symbol Rating
|
OCR Scan
|
KSE200
65MBz
100nA
KSE210
O-126
100mA,
10MHz
|
PDF
|
