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    L TO KU BAND LOW NOISE GAAS MESFET Search Results

    L TO KU BAND LOW NOISE GAAS MESFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    L TO KU BAND LOW NOISE GAAS MESFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NE674

    Abstract: NE67400 NE67483B 0840 057 0615
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NE67400 NE67483B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		PDF NE67400 NE67483B NE674 24-Hour NE67400 NE67483B 0840 057 0615

    NE674

    Abstract: NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B
    Text: NE67400 NE67483B NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz 24 Noise Figure, NF dB • HIGH ASSOCIATED GAIN: GA = 10 dB TYP at f = 12 GHz


    Original     		PDF NE67400 NE67483B NE674 24-Hour NE67483B NEC 3552 NE67400 NE67483 PACKAGE OUTLINE 83B

    4439 gm

    Abstract: NE76083A NE76084S NE76084-T1
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • LOW COST METAL/CERAMIC PACKAGE • ION IMPLANTATION • AVAILABLE IN TAPE & REEL 21 3.5


    Original     		PDF NE76084S NE76084S NE76084-T1 24-Hour 4439 gm NE76083A NE76084-T1

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE: 1.8 dB typical at 12 GHz 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 3.5 • LOW COST PLASTIC PACKAGING


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour NE76038-T1

    NE76083A

    Abstract: lg 83a
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION DESCRIPTION 21


    Original     		PDF NE76083A NE76083A 24-Hour lg 83a

    NE76084-T1

    Abstract: NE76083A NE76084S 4439 gm
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz 4 • HIGH ASSOCIATED GAIN GA = 9 dB TYP at f = 12 GHz • ION IMPLANTATION • AVAILABLE IN TAPE & REEL


    Original     		PDF NE76084S NE76084S NE76084-T1 24-Hour NE76084-T1 NE76083A 4439 gm

    RN501

    Abstract: NE76000 NE76000L 150J10
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm


    Original     		PDF NE76000 NE76000 NE760 NE76000L 24-Hour RN501 NE76000L 150J10

    NE76083A

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • HERMETIC METAL/CERAMIC PACKAGE • ION IMPLANTATION 24 21 3.5 Noise Figure, NF dB • LG = 0.3 µm, WG = 280 µm 4 Ga 3 18 2.5 15 2 12 9


    Original     		PDF NE76083A NE76083A 24-Hour

    NE76000

    Abstract: NE76000L AF127
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz • ION IMPLANTATION 24 21 3.5 Ga 3 18 2.5 15 2 12 Associated Gain, GA dB • LG = 0.3 µm, WG = 280 µm


    Original     		PDF NE76000 NE76000 NE760 NE76000L 24-Hour NE76000L AF127

    30374

    Abstract: NE76038 NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA 4 • HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz 24 21 • LG = 0.3 µm, WG = 280 µm • LOW COST PLASTIC PACKAGING • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE76038 NE76038 NE76038-T1 24-Hour 30374 NE76038-T1

    L to Ku Band Low Noise GaAs MESFET

    Abstract: No abstract text available
    Text: L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES NE67400 NE67483B N0ISE FIGURE-a s s o c ia t e d - g a in vs. FREQUENCY


    OCR Scan     		PDF NE67400 NE67483B NE674is L to Ku Band Low Noise GaAs MESFET

    NE76038

    Abstract: NE76038-T1
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES_ • NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: V ds = 3 V, Ids = 10 m A 1.8 dB typical at 12 GHz • NE76038 * HIGH ASSOCIATED GAIN: I I I I- r 24


    OCR Scan     		PDF NE76038 NE76038 -J22L NE76038-T1

    NE76084

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz < HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • L g = 0.3 im , W g = 280 Jim . LOW COST METAL/CERAMIC PACKAGE


    OCR Scan     		PDF NE76084 NE76084 GHz21 lS211 NE76084S NE76084-T1 00b5511

    NE76038

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES MF7ftn NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, I ds = 10 mA LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 7.5 dB typical at 12 GHz L g = 0 .3 im , W g = 2 8 0 |xm CO LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 NE76038-T1

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET FEATURES NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, I d s = 10 m A LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz HIGH ASSOCIATED GAIN tn T> G a = 9 dB TYP at f = 12 GHz L g = 0.3 |im , W g = 2 80 Jim


    OCR Scan     		PDF NE76000 NE76000 NE760 IS12S21I NE76000L

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz HIGH ASSOCIATED GAIN 0Q ;o Ga = 9 dB TYP at f = 12 GHz < O c La = 0.3 |xm, Wa = 280 um ro


    OCR Scan     		PDF NE76000 NE76000 NE760 lS22l IS12I 20jim NE76000L NE76000N

    SIA 6822

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET FEATURES NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz m 2, < CD HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz GATE WIDTH: Wg = 280


    OCR Scan     		PDF NE71383B NE71383B SIA 6822

    IC DS 1242

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • NE76084S LOW NOISE FIGURE NF = 1.6 dB TYP at f= 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz • Lg = 0.3 [im, Wg = 280 \im


    OCR Scan     		PDF NE76084S NE76084S S12S21| NE76084-T1 24-Hour IC DS 1242

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku-BAND GaAs MESFET FEATURES NE76038 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos - 3 V, IDS = 10 m A LOW NOISE FIGURE: 1.8 dB typical at 12 GHz HIGH ASSOCIATED GAIN: 21 7.5 dB typical at 12 GHz 18 ffl 15 < a La s 0.3 |im, Wo = 280 jun LOW COST PLASTIC PACKAGING


    OCR Scan     		PDF NE76038 NE76038 reliab121 NE76038-T1

    z 0607

    Abstract: No abstract text available
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: Wg = 280 \im


    OCR Scan     		PDF NE71383B NE71383B NE71300L NE71383 24-Hour z 0607

    sg 6822

    Abstract: ne71383B sg 8841 ku-band oscillator D 1307
    Text: L to Ku Band Low Noise N-Channel GaAs MESFET NE71383B NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ a tf = 12 GHz m • HIGH ASSOCIATED GAIN: < 5 14 dB typ at f = 4 GHz ro • GATE WIDTH: Wg = 280 jim


    OCR Scan     		PDF NE71383B NE71383B NE71300L 24-Hour sg 6822 sg 8841 ku-band oscillator D 1307

    NE76000

    Abstract: 3079 alpha wire G1225
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76000 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES V ds = 3 V, Id s = 1 0 m A LOW NOISE FIGURE NF = 1.6 dB TYP a t f = 12GHz 24 21 HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz 18 < Lg = 0.3 im, W g = 280 jam


    OCR Scan     		PDF 12GHz NE76000 NE76000 NE760 140jjm 20jjjm NE76000L 3079 alpha wire G1225

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76083A NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY Vds = 3 V, Ids = 10 mA FEATURES LOW NOISE FIGURE NF = 1.6 dB T Y P a tf = 12 GHz 21 HIGH ASSOCIATED GAIN Ga = 9 dB TYP at f = 12 GHz La = 0.3 |im, Wo = 280 m •O 18


    OCR Scan     		PDF NE76083A NE76083A IS11I

    Untitled

    Abstract: No abstract text available
    Text: LOW NOISE L TO Ku BAND GaAs MESFET NE76084 NOISE FIGURE AND ASSOCIATED GAIN vs. FREQUENCY V ds = 3 V, Ids = 10 mA FEATURES • LOW NOISE FIGURE NF = 1.6 dB TYP a tf = 12 GHz • HIGH ASSOCIATED GAIN Ga = 9 dB TYP at 1 = 12 GHz • La s 0.3 iim, Wa = 280 |xm


    OCR Scan     		PDF NE76084 NE76084 NE76084S NE76084-T1