Untitled
Abstract: No abstract text available
Text: 4532 SERIES DATA SHEET GAS DISCHARGE TUBE – 4532 SERIES FEATURES High insulation resistance. Low capacitance ≤0.5pF . Accord with IEC61000-4-5 standard.Max Surge current capacity 2000A 8/20ȝs. Accord with ITU-TK.21 standard 4KV 10/700ȝs
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IEC61000-4-5
J-STD-020
08-Nov-100
4532-421-LF
4532-471-LF
4532-501-LF
4532-601-LF
15typ.
08-Nov-12
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ldr of 80k
Abstract: 000-3FF
Text: MDT10P55A 1. General Description Power-on Reset Sleep Mode for power saving This EPROM-Based 8-bit micro-controller uses a fully 5 types of oscillator can be selected by static CMOS technology process to achieve higher programming option: speed INTRC-Internal 4 MHz RC oscillator
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MDT10P55A
900uA
ldr of 80k
000-3FF
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Untitled
Abstract: No abstract text available
Text: B32 SERIES DATA SHEET GAS DISCHARGE TUBE – B32 SERIES FEATURES High insulation resistance. Low capacitance 0.5pF . Max Surge current capacity 500A 8/20ȝs. Accord with ITU-TK.21 standard 4KV 10/700ȝs Surface Mounted Gas Arrester Micro-Gap Design
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J-STD-020
24-Jan-13
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ldr of 80k
Abstract: 000-3FF MDT10P56
Text: MDT10P56 1. General Description This EPROM-Based 8-bit micro-controller uses a fully u Power-on Reset u Sleep Mode for power saving u 5 types of oscillator can be selected by static CMOS technology process to achieve higher programming option: speed INTRC-Internal 4 MHz RC oscillator
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MDT10P56
900uA
ldr of 80k
000-3FF
MDT10P56
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MDT10P55B1S
Abstract: MDT10P55B1P mdt10p55b3p MDT10P55B 000-3FF
Text: MDT10P55B u Power-on Reset u Power edge-detector Reset This EPROM-Based 8-bit micro-controller uses a fully u Sleep Mode for power saving static CMOS technology process to achieve higher u 5 types of oscillator can be selected by 1. General Description speed
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MDT10P55B
600uA
1000ns
MDT10P55B1S
MDT10P55B1P
mdt10p55b3p
MDT10P55B
000-3FF
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MDT10p55
Abstract: 000-3FF
Text: MDT10P55 1. General Description This EPROM-Based 8-bit micro-controller uses a fully u Power-on Reset u Sleep Mode for power saving u 5 types of oscillator can be selected by static CMOS technology process to achieve higher programming option: speed INTRC-Internal 4 MHz RC oscillator
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MDT10P55
900uA
MDT10p55
000-3FF
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MDT10P721
Abstract: No abstract text available
Text: MDT10P721 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P721
16-bit
192X8
MDT10P721
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MDT10P72
Abstract: No abstract text available
Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise
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MDT10P72
16-bit
MDT10P72
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LF 30 700u
Abstract: MDT10P72
Text: MDT10P72 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static A/D converter module: CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high
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MDT10P72
16-bit
128X8
LF 30 700u
MDT10P72
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MDT10P721
Abstract: 455k xtal 730u
Text: MDT10P721 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static u CMOS technology process to achieve higher speed and -5 analog inputs multiplexed into one A/D smaller size with the low power consumption and high noise
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MDT10P721
16-bit
MDT10P721
455k xtal
730u
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000-3FF
Abstract: 20MHZ MDT10P56 455k xtal
Text: MDT10P56 1. 概述 u 上电复位(POR) 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低 功耗和抗高噪声一体的芯片。内存包括 1K 字节 EPROM 和 72 字节静态 RAM。 u 睡眠低功耗方式
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MDT10P56
20MHZ
200ns
MDT10P56A1P/MDT10P56A1S
MDT10P56A3P/MDT10P56A3S
900uA
000-3FF
20MHZ
MDT10P56
455k xtal
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MDT10P55B1S
Abstract: MDT10P55B1P mdt10p55b3p 000-3FF 20MHZ MDT10P55B 1111XXXX ldr 10k mdt10p55b2s
Text: MDT10P55B 1. 概述 u 内部 RAM 大小:72 字节 这个 8 位基于 EPROM 微控制器是由完全 静态 CMOS 技术设计,集高速体积小、 低功耗和抗高噪声一体的芯片。内存包括 1K 字节 EPROM 和 72 字节静态 RAM。 u 36 条指令
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MDT10P55B
20MHZ
200ns
MDT10P55B1P/MDT10P55B1S
MDT10P55B3P/MDT10P55B3S
500uA
MDT10P55B1S
MDT10P55B1P
mdt10p55b3p
000-3FF
20MHZ
MDT10P55B
1111XXXX
ldr 10k
mdt10p55b2s
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MDT10P62
Abstract: No abstract text available
Text: MDT10P62 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and
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MDT10P62
16-bit
MDT10P
128X8
MDT10P62
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MDT10P62
Abstract: No abstract text available
Text: MDT10P62 1. General Description -PortB<7:4> interrupt on change -CCP,SCM This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed u TMR0 : 8-bit real time clock/counter and smaller size with the low power consumption and high
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MDT10P62
16-bit
MDT10P62
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MDT10P621
Abstract: No abstract text available
Text: MDT10P621 -PortB<7:4> interrupt on change -CCP,SCM 1. General Description This EPROM-Based 8-bit micro-controller uses a fully static CMOS technology process to achieve higher speed and smaller size with the low power consumption and high noise immunity. On chip
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MDT10P621
16-bit
192X8
MDT10P621
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12OSC1
Abstract: MDT10P72 XT 4MHZ 20MHZ
Text: MDT10P72 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 -A/D 转换完成
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MDT10P72
PORTB74
20MHZ
200ns
128X8
12OSC1
MDT10P72
XT 4MHZ
20MHZ
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20MHZ
Abstract: MDT10P721
Text: MDT10P721 1. 概述 -A/D 转换完成 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断
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MDT10P721
PORTB74
20MHZ
200ns
192X8
20MHZ
MDT10P721
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MDT10F630
Abstract: MDT10F630P11 MDT10F630P13 MDT10F630S11
Text: MDT10F630 automotive 1. General Description to low transmitters/receivers, power pointing remote devices, and This 8-bit Micro-controller uses a fully static telecommunications processors, such as Remote CMOS technology to achieve high speed, small controller,
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MDT10F630
MDT10F630P11
MDT10F630S11
MDT10F630
Temperature25
MDT10F630P11
MDT10F630P13
MDT10F630S11
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Untitled
Abstract: No abstract text available
Text: GS9091B GenLINX II 270Mb/s Deserializer for SDI and DVB-ASI Key Features Description • SMPTE 259M-C compliant descrambling and NRZI to NRZ decoding with bypass • DVB-ASI 8b/10b decoding The GS9091B is a 270Mb/s equalizing and reclocking deserializer with an internal FIFO. It provides a complete receive solution for SD-SDI and DVB-ASI applications.
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GS9091B
270Mb/s
259M-C
8b/10b
GS9091B
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GS9091
Abstract: gennum GS9091 device GS9091BCBE3 nrzi to nrz converter circuit diagram 15B14 GS9091B 305M 352M GS9090B RP168
Text: GS9091B GenLINX II 270Mb/s Deserializer for SDI and DVB-ASI Key Features Description • SMPTE 259M-C compliant descrambling and NRZI to NRZ decoding with bypass • DVB-ASI 8b/10b decoding The GS9091B is a 270Mb/s equalizing and reclocking deserializer with an internal FIFO. It provides a complete receive solution for SD-SDI and DVB-ASI applications.
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GS9091B
270Mb/s
259M-C
8b/10b
GS9091
gennum GS9091 device
GS9091BCBE3
nrzi to nrz converter circuit diagram
15B14
305M
352M
GS9090B
RP168
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MDT10P621
Abstract: 20MHZ pa 4010 12OSC1
Text: MDT10P621 1. 概述 -TMR0,TMR1,TMR2 时钟 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 4K 字节 EPROM 和 192 字节静态 RAM。 -PORTB<7:4>电平变化中断
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MDT10P621
PORTB74
20MHZ
200ns
MDT10P
192X8
MDT10P621
20MHZ
pa 4010
12OSC1
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20MHZ
Abstract: MDT10P62 12OSC1 MDT10P621
Text: MDT10P62 .1. 概述 -CCP,SCM 这个 8 位基于 EPROM 微控制器是由完全静 态 CMOS 技术设计,集高速体积小、低功耗和 抗高噪声一体的芯片。内存包括 2K 字节 EPROM 和 128 字节静态 RAM。 TMR0 : 8 位时钟/记数器
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MDT10P62
20MHZ
200ns
PORTB74
1MDT10P
128X8
20MHZ
MDT10P62
12OSC1
MDT10P621
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Untitled
Abstract: No abstract text available
Text: 30 Amp Ultrasoft Rectifier SSUM301 20 Dim. Inches Minimum M illim eter Maximum Minimum Maximum Notes A B C D E .185 .0 87 .059 .0 40 .079 .209 .102 .0 98 .0 55 .0 9 4 4 .70 2.21 1.50 1.02 2.01 5.31 2.59 2.49 1.40 2.39 G H J K L M N P Q R .016 .819 .6 27 .4 30
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OCR Scan
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SSUM301
Sn/15
Sn/37
SSUM30120
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CU20029SCPB-T20A
Abstract: cu20029scpb imsa-9032B-16P 16CURSOR IMSA-9032B-16P-GF AMP171822-3 itron vacuum II-84 IRISO IMSA IRISO IMSA GF
Text: itron VACUUM FLUORESCENT DISPLAY MODULE CU20029SCPB-T20A CU20029SCPB-T20A 2 LINE x 20 CHARACTERS 9 mm HIGH 5 x 7 DOT MATRIX FEATURES 2 x 20 Character Display Single 5v Supply Bright Blue Green Display ASCII Character Set Serial and Parallel Interface Compact Construction
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CU20029SCPB-T20A
RS232
IMSA-9032B-16P-GF
AMP171822-3
STD-16P
HS003514
CU20029SCPB-T20A
cu20029scpb
imsa-9032B-16P
16CURSOR
itron vacuum
II-84
IRISO IMSA
IRISO IMSA GF
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