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    LFPAK SOT1023 Search Results

    LFPAK SOT1023 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PH1225A

    Abstract: PH1225AL
    Text: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only


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    PH1225AL PH1225AL PH1225A PDF

    PSMN1R6-40YLC

    Abstract: LFPAK package 5
    Text: LF PA K PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 19 June 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is


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    PSMN1R6-40YLC PSMN1R6-40YLC LFPAK package 5 PDF

    sot669 footprint

    Abstract: PSMN1R1-25YLC PSMN3R7-25YLC 25YLC
    Text: NextPower MOSFETs Smaller, Faster, Cooler NextPower 25 V & 30 V MOSFETs in LFPAK Power-SO8 NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low RDS(on) device and accept the


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    PDF

    PSMN1R2

    Abstract: PSMN1R2-25YL
    Text: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PSMN1R2-25YL PSMN1R2-25YL PSMN1R2 PDF

    PH1330AL

    Abstract: ph1330 SOT1023 lfpak sot1023
    Text: PH1330AL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed for computing customers only


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    PH1330AL PH1330AL ph1330 SOT1023 lfpak sot1023 PDF

    Untitled

    Abstract: No abstract text available
    Text: PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology 22 August 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and


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    PSMN1R6-40YLC PDF

    PSMN1R3-30YL

    Abstract: No abstract text available
    Text: PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PSMN1R3-30YL PSMN1R3-30YL PDF

    Power MOSFET Selection Guide

    Abstract: lfpak sot1023
    Text: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic


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    PSMN1R2-25YL PSMN1R2-25YL ICP1020807 08-Mar-2011 Power MOSFET Selection Guide lfpak sot1023 PDF

    Untitled

    Abstract: No abstract text available
    Text: PA K SOT1023 LF LFPAK; Power-SO8; Tape reel; standard product orientation 12NC ending 115 Rev. 1 — 26 September 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel


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    OT1023 001aak291 OT1023 PDF

    to220 pcb footprint

    Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
    Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.


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    soldering/sot669 to220 pcb footprint "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package PDF

    LFPAK footprint

    Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
    Text: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.


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    LFPAK56 LFPAK33 LFPAK56, LFPAK footprint PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp PDF

    SOT1023

    Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
    Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in


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    OT669 OT1023) PSMN1R2-25YL) high-efficien84 SOT1023 lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL PDF

    sot1023

    Abstract: lfpak sot1023
    Text: Package outline Plastic single-ended surface-mounted package LFPAK ; 4 leads A E SOT1023 E1 A b2 (3x) c1 b1 mounting base H D1 D L 1 2 3 4 b e A1 w A X c C θ Lp detail X 2.5 A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30


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    OT1023 sot1023 OT1023 lfpak sot1023 PDF

    lfpak

    Abstract: LFPAK package SOT669* PSMN017-60YS PSMN012-60YS as 220 1r7 PSMN015-60PS PSMN5R0-80PS PSMN013-30LL PSMN014-60LS PSMN017-30LL
    Text: NXP power switching MOSFETs in compact QFN3333 package Smaller. Faster. Cooler. 30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package A new range of 30 V Trench 6 MOSFETs in QFN3333 SOT873 package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package.


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    QFN3333 QFN3333 OT873) switc873 OT669 OT1023 lfpak LFPAK package SOT669* PSMN017-60YS PSMN012-60YS as 220 1r7 PSMN015-60PS PSMN5R0-80PS PSMN013-30LL PSMN014-60LS PSMN017-30LL PDF

    PSMN015-60PS

    Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
    Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4


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    OT404) PHB66NQ03LT OT428) PHD38N02LT PH2520U OT163 PSMN015-60PS BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN PDF

    2N7002 NXP MARKING

    Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
    Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101)  Very high ESD protection levels and


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    OD323 SC-76) OD882D OD882 OD123F 2N7002 NXP MARKING TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been


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    PSMN1R0-40YLD LFPAK56 LFPAK56 PDF

    Untitled

    Abstract: No abstract text available
    Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 3 June 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56


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    PSMN1R0-40YLD LFPAK56 LFPAK56 PDF