Untitled
Abstract: No abstract text available
Text: PA K SOT1023 LF LFPAK; Power-SO8; Tape reel; standard product orientation 12NC ending 115 Rev. 1 — 26 September 2012 Packing information 1. Packing method Printed plano box Barcode label Reel Tape Barcode label Circular sprocket holes opposite the label side of reel
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OT1023
001aak291
OT1023
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sot1023
Abstract: lfpak sot1023
Text: Package outline Plastic single-ended surface-mounted package LFPAK ; 4 leads A E SOT1023 E1 A b2 (3x) c1 b1 mounting base H D1 D L 1 2 3 4 b e A1 w A X c C θ Lp detail X 2.5 A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30
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OT1023
sot1023
OT1023
lfpak sot1023
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SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
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OT669
OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
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Untitled
Abstract: No abstract text available
Text: Package outline Plastic single-ended surface-mounted package LFPAK56 ; 4 leads A E SOT1023 E1 A b2 (3x) c1 b1 mounting base H D1 D L 1 2 3 4 b e A1 w A X c C θ Lp detail X 2.5 A A1 b b1 b2 c c1 D(1) D1(1) E(1) E1(1) max 1.10 0.15 0.50 4.41 0.25 0.30 4.70 4.45 5.30
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LFPAK56)
OT1023
sot1023
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edge-detection* circuit diagram
Abstract: HE4000B HEF4753B HEF4753BD HEF4753BP
Text: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF4753B LSI Universal timer module Product specification
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HE4000B
HEF4753B
edge-detection* circuit diagram
HEF4753B
HEF4753BD
HEF4753BP
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 11 July 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R0-40YLD
LFPAK56
LFPAK56
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edge-detection* circuit diagram
Abstract: HEF4753BP
Text: INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC04 LOCMOS HE4000B Logic Family Specifications HEF, HEC • The IC04 LOCMOS HE4000B Logic Package Outlines/Information HEF, HEC HEF4753B LSI Universal timer module Product specification
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HE4000B
HEF4753B
OT133
OT102
/SUD/PHGLS07403-1
edge-detection* circuit diagram
HEF4753BP
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PSMN1R6-40YLC
Abstract: LFPAK package 5
Text: LF PA K PSMN1R6-40YLC N-channel 40 V 1.55 mΩ logic level MOSFET in LFPAK using NextPower technology Rev. 3 — 19 June 2012 Objective data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
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PSMN1R6-40YLC
PSMN1R6-40YLC
LFPAK package 5
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LFPAK footprint
Abstract: PowerPAK 1212-8 stencil LFPAK footprint Renesas PSMN8R2-80YS POWERPAK SO8 LFPAK56 DFN 3.3X3.3 PSMN7R0-30MLC PSMN012-60YS SOT223 nxp
Text: Ultra-reliable LFPAK56 and LFPAK33 Tougher just got smaller NXP’s LFPAK – Designed for reliability Designing a complex automotive system, a high efficiency industrial power supply or a slimline portable PC ? NXP has a range of smaller, faster, cooler MOSFETs to help you deliver maximum reliability.
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LFPAK56
LFPAK33
LFPAK56,
LFPAK footprint
PowerPAK 1212-8 stencil
LFPAK footprint Renesas
PSMN8R2-80YS
POWERPAK SO8
DFN 3.3X3.3
PSMN7R0-30MLC
PSMN012-60YS
SOT223 nxp
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PSMN015-60PS
Abstract: BUK9507-30B Power MOSFET Selection Guide BSS123 NXP BSH103 BSS84 / BSH201 2N7002CK BSH108 BUK7535-55A PMN38EN
Text: Power MOSFET Selection Guide 2010 Smaller, faster, cooler 2 Table of contents 12 V – 25 V N-channel MOSFETs ������������������������������������������������������������������������������������������������������������ 4
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OT404)
PHB66NQ03LT
OT428)
PHD38N02LT
PH2520U
OT163
PSMN015-60PS
BUK9507-30B
Power MOSFET Selection Guide
BSS123 NXP
BSH103
BSS84 / BSH201
2N7002CK
BSH108
BUK7535-55A
PMN38EN
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN0R9-30YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-PLUS technology 15 July 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R0-40YLD
LFPAK56
LFPAK56
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PH1330AL
Abstract: ph1330 SOT1023 lfpak sot1023
Text: PH1330AL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed for computing customers only
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PH1330AL
PH1330AL
ph1330
SOT1023
lfpak sot1023
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology 3 June 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56
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PSMN1R0-40YLD
LFPAK56
LFPAK56
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Untitled
Abstract: No abstract text available
Text: Reflow soldering footprint 4.7 4.2 0.25 2x 0.9 (3×) 0.25 (2×) 0.6 (4×) 3.45 0.6 (3×) 3.5 2.55 2 0.25 (2×) SR opening = Cu + 0.075 1.1 2.15 3.3 SP opening = Cu − 0.050 0.7 (4×) 1.27 3.81 www.nxp.com solder lands solder paste 125 µm stencil solder resist
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sot1023
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PSMN1R2
Abstract: PSMN1R2-25YL
Text: PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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PSMN1R2-25YL
PSMN1R2-25YL
PSMN1R2
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PH1225A
Abstract: PH1225AL
Text: PH1225AL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Rev. 01 — 14 October 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is for computing use only
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PH1225AL
PH1225AL
PH1225A
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2N7002 NXP MARKING
Abstract: TL431 transistor 139 et cd player amplifier double ic 4440 BCM 4709 sot1194 SSOP14 land pattern ip4065cx11 PMV27UP TRANSISTOR SMD CODE PACKAGE SOT89 gy IP4058CX8/LF
Text: Discrete Semiconductors Selection Guide 2011 Diodes, protection and signal conditioning devices, bipolar transistors, MOSFETs, thyristors SOD323 SC-76 SOD323 (SC-76) SOD882D / SOD882 SOD882D / SOD882 SOD123F SOD123F SOD80C SOD80C SOT883 (SC-101) Very high ESD protection levels and
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OD323
SC-76)
OD882D
OD882
OD123F
2N7002 NXP MARKING
TL431 transistor 139 et
cd player amplifier double ic 4440
BCM 4709
sot1194
SSOP14 land pattern
ip4065cx11
PMV27UP
TRANSISTOR SMD CODE PACKAGE SOT89 gy
IP4058CX8/LF
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008717
Abstract: No abstract text available
Text: LF PA K 56 PSMN1R0-40YLD N-channel 40 V 1.1 mΩ logic level MOSFET in LFPAK56 using NextPower-PLUS technology 26 July 2013 Objective data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in 150 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been
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PSMN1R0-40YLD
LFPAK56
LFPAK56
008717
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lfpak
Abstract: LFPAK package SOT669* PSMN017-60YS PSMN012-60YS as 220 1r7 PSMN015-60PS PSMN5R0-80PS PSMN013-30LL PSMN014-60LS PSMN017-30LL
Text: NXP power switching MOSFETs in compact QFN3333 package Smaller. Faster. Cooler. 30 V Trench 6 MOSFETs in 3.3 x 3.3 mm QFN package A new range of 30 V Trench 6 MOSFETs in QFN3333 SOT873 package NXP now offers a range of high-performance, 30 V, logic-level MOSFETs in QFN3333 package.
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QFN3333
QFN3333
OT873)
switc873
OT669
OT1023
lfpak
LFPAK package
SOT669* PSMN017-60YS
PSMN012-60YS
as 220 1r7
PSMN015-60PS
PSMN5R0-80PS
PSMN013-30LL
PSMN014-60LS
PSMN017-30LL
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Untitled
Abstract: No abstract text available
Text: LF PA K 56 PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 February 2014 Preliminary data sheet 1. General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising NXP’s unique “SchottkyPlus” technology delivers
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PSMN0R9-30YLD
LFPAK56
LFPAK56
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PSMN1R3-30YL
Abstract: No abstract text available
Text: PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Rev. 02 — 25 June 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in LFPAK package qualified to 150 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic
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to220 pcb footprint
Abstract: "thermal via" PCB D2PAK LFPAK footprint Renesas LFPAK footprint POWERPAK SO8 TO220 HEATSINK DATASHEET thermal PCB D2PAK sot669 lfpak LFPAK package
Text: LFPAK The Toughest Power-SO8 The evolution of Power MOSFET packages Typical TO220 construction TO220 is the ‘original’ through-hole power package. It is suitable for through-hole mounting and low-cost wave soldering. It also provides very low thermal resistances when mounted to a suitable heatsink.
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soldering/sot669
to220 pcb footprint
"thermal via" PCB D2PAK
LFPAK footprint Renesas
LFPAK footprint
POWERPAK SO8
TO220 HEATSINK DATASHEET
thermal PCB D2PAK
sot669
lfpak
LFPAK package
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XV-8000
Abstract: No abstract text available
Text: HÊF4753B LSI UNIVERSAL TIMER MODULE The HEF4753B is a universal timer module for counting and dividing as well as for event-recognition and manipulation of input sequences. The following functions are included: synchronization and edge-detection of the input signal, program
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F4753B
HEF4753B
XV-8000
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