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    LH532100B Search Results

    LH532100B Datasheets (26)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH532100B Sharp CMOS 2M (256K x 8) MROM Original PDF
    LH532100B-1 Sharp CMOS 2M (256K x 8) MROM Original PDF
    LH532100BD Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BD Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BD-1 Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BD-1 Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BN Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BN Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BN-1 Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BN-1 Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BS Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BS Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BS-1 Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BS-1 Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BSR Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BSR Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BSR-1 Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BSR-1 Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF
    LH532100BT Sharp CMOS 2M(256K x 8) Mask-Programmable ROM Original PDF
    LH532100BT Sharp CMOS 2M (256K x 8) Mask-Programmable ROM Scan PDF

    LH532100B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    32DIP

    Abstract: 32-PIN LH532100B 277A5
    Text: LH532100B CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS 32-PIN DIP


    Original     		PDF LH532100B LH532100B 32-PIN 32QFJ450 32-pin, 450-mil 600-mil 32DIP 277A5

    32DIP

    Abstract: 32-PIN LH532100B-1 532100B1-6 timing DIAGRAM OF ROM
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) Mask-Programmable ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O


    Original     		PDF LH532100B-1 32-PIN 32QFJ450 32-pin, 450-mil LH532100B 600-mil DIP032-P-0600) 32DIP LH532100B-1 532100B1-6 timing DIAGRAM OF ROM

    32DIP

    Abstract: 32-PIN LH532100B CE-2212
    Text: LH532100B CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words × 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 × 8 bits. It is fabricated using silicon-gate CMOS process technology. PIN CONNECTIONS


    Original     		PDF LH532100B LH532100B 32-PIN 32QFJ450 32-pin, 450-mil 600-mil 32DIP CE-2212

    32DIP

    Abstract: 32-PIN LH532100B-1
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. • Static operation CMOS 2M (256K × 8) MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW OE1/OE1/DC 1 32 VCC A16 2 31 DC • TTL compatible I/O A15 3 30 A17 4 29


    Original     		PDF LH532100B-1 32-PIN 32QFJ450 32-pin, 450-mil LH532100B 600-mil DIP032-P-0600) 32DIP LH532100B-1

    Sony CXA1191M

    Abstract: philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide
    Text: Untitled HAM RADIO FILE - Various pinouts saved from the Chipdir 2010 http://www.chipdir.org/ 0512d -0512d +-\/-+ 1 -|5V in gnd in|- 24 2 -|5V in gnd in|- 23 3 -|5V in gnd in|- 22


    Original     		PDF 0512d ------------------------------------0512d z86e04 Sony CXA1191M philips ecg master replacement guide FZK101 YD 803 SGS FZK 101 Siemens CMC 707 am radio receiver philips ecg semiconductors master replacement guide CXA1191M ym2612 ecg semiconductors master replacement guide

    A1SH

    Abstract: 32DIP 32-PIN LH532100B-1 A14C
    Text: LH532100B-1 FEATURES CMOS 2M 256K x 8 Mask-Programmable ROM PIN CONNECTIONS • 262,144 words x 8 bit organization • Access time: 120 ns (MAX.) 32-PIN DIP 32-PIN SOP TOP VIEW f \ O E ^ O E i/D C C • Static operation • TTL compatible I/O • Three-state outputs


    OCR Scan     		PDF LH532100B-1 32-pin, 600-miI 525-miI 450-mil 400-mil A1SH 32DIP 32-PIN LH532100B-1 A14C

    Untitled

    Abstract: No abstract text available
    Text: C M OS 2M 256K x 8 M ask-Program m able ROM FEATURES • 262,144 x 8 bit organization • Access time: 120/150 ns (MAX.) • Low power consumption: Operating: 275 mW (MAX.) DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH532100B 32-pin, 600-mil 525-mil 32-PIN 32-Din, DIP32-P-600)

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    J-1100

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) f • Three-state outputs • Single +5 V power supply • Power consumption: Operating: 275 mW (MAX.)


    OCR Scan     		PDF LH532100B-1 32-PIN 32-pin, 600-mil 525-mil 450-mil J-1100

    DIC14

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization • Access time: 120 ns MAX. CMOS 2M (256K x 8) M a sk-P ro g ra m m a b le ROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW s • Three-state outputs • Single +5 V power supply • Power consumption:


    OCR Scan     		PDF LH532100B-1 32-pin, 600-mil 525-mil 450-mil 400-mil DIC14

    Untitled

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 w ords x 8 bit organization • Access tim e: 150 ns (MAX.) The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology.


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-m LH532100B

    DIC20

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 MROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit m ask-program m able ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Low-power consumption: Operating: 275 mW (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B DIC20

    capacitor A7C

    Abstract: 453J 32TSOP 32DIP 32-PIN A15H LH532100B
    Text: CMOS 2M 256K x 8 M ask-Program m able ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B capacitor A7C 453J 32TSOP 32DIP 32-PIN A15H

    500-101

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 words x 8 bit organization The LH532100B is a 2M-bit mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using silicon-gate CMOS process technology. • Access time: 150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 450-mil 400-mil LH532100B 500-101

    Untitled

    Abstract: No abstract text available
    Text: LH532100B-1 FEATURES • 262,144 words x 8 bit organization CMOS 2M 256K x 8 MROM PIN CONNECTIONS 32-PIN DIP 32-PIN SOP TOP VIEW • Access time: 120 ns (MAX.) / O E ^Ô Ë ^D C H • Static operation • TTL compatible I/O • Three-state outputs • Power consumption:


    OCR Scan     		PDF LH532100B-1 32-PIN 32-pin, 600-mil 525-mil 450-mil

    Untitled

    Abstract: No abstract text available
    Text: CMOS 2M 256K x 8 Mask-Programmable ROM FEATURES • 2 6 2 ,1 4 4 x 8 bit organization • Access time: 120/150 ns (M AX.) • Low-power consumption: DESCRIPTION The LH532100B is a mask-programmable ROM organized as 262,144 x 8 bits. It is fabricated using


    OCR Scan     		PDF LH532100B 32-pin, 600-m 525-m 32-PIN 32-PtN 600-mil

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: CM O S 2M 256K x 8 Mask-Programmable ROM FEATURES DESCRIPTION • 262,144 x 8 bit organization T h e LH 5 321 00 B is a m ask-program m able R O M organized a s 262,144 x 8 bits. It is fabricated using silicon-gate C M O S p rocess technology. • Access time: 120/150 ns (MAX.)


    OCR Scan     		PDF 32-pin, 600-mil 525-mil 32-PIN 2100B

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


    OCR Scan     		PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    41C1000

    Abstract: fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b 41c464 hn62324 M7202A
    Text: MEM ORY ICs FUNCTION GUIDE 3. C R O S S REFERENCE GUIDE 3.1 DRAM Density Org. Samsung Mode Toshiba Hitachi Fujitsu H M 51 256 M B 81256 NEC Oki 64K X 1 Page K M 416 4 25 6 K X 1 F. Page KM 41C256 TC 51256 Nibble KM 41C257 TC51257 S. C olu m n KM 41C258 TC 51258


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 44C256 44C258 44C1002 TC51257 fujitsu 814100 TC 55464 toshiba HN62304 hn623257 658128 816b hn62324 M7202A

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


    OCR Scan     		PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100