Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    LH5326 Search Results

    LH5326 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH532600 Sharp CMOS 2M (256K x 8-128K x 16) MROM Original PDF
    LH532600D Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600D Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600N Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600N Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600T Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600T Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600TR Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600TR Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF

    LH5326 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    532600-6

    Abstract: LH532600
    Text: LH532600 CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs


    Original     		LH532600 8/128K 40-PIN D15/A-1 48TSOP 48-pin, 40-pin, 600-mil 532600-6 LH532600 PDF

    LH532600

    Abstract: LH532
    Text: LH532600 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) CMOS 2M (256K × 8/128K × 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC 1 40 A8 A7 2 39 A9 A6 3 38


    Original     		LH532600 8/128K 40-PIN D15/A-1 48TSOP 48-pin, 40-pin, 600-mil LH532600 LH532 PDF

    532600-6

    Abstract: A10C LH532600
    Text: LH532600 CMOS 2M 256K x 8/12 8 K x 16 M a sk-P ro g ram m a ble ROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 4 0 -P IN D IP 4 0 -P IN S O P T O P V IE W N H I a 8 2 39 □


    OCR Scan     		LH532600 40-pin, 600-miI 525-miI 48-pin, LH532600 8/128K 48TSOP 532600-6 A10C PDF

    1235Z

    Abstract: No abstract text available
    Text: LH532600 CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) 40-P IN DIP 40-P IN SO P TO P V IE W s 40 D A 8 C 2 39 Z l Ag


    OCR Scan     		LH532600 40-pin, 600-mil 525-mil 48-pin, LH532600 8/128K 1235Z PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532600 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption:


    OCR Scan     		LH532600 40-pin, 600-mil 525-mil 48-pin, 8/128K 40-PIN PDF

    Untitled

    Abstract: No abstract text available
    Text: LH532600 CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) 4 0 -P IN D IP 4 0 -P IN S O P T O P a 7 I= 2 a 6 Z 3 38 Zl A g


    OCR Scan     		LH532600 40-pin, 600-mil 525-mil 48-pin, 8/128K 48TSOP PDF

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


    OCR Scan     		LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600 PDF

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02 PDF

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


    OCR Scan     		28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235 PDF

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


    OCR Scan     		LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46 PDF

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


    OCR Scan     		100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m PDF

    sharp mask rom

    Abstract: LH532K
    Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. 32-pin SO P It provides a high-speed access time of 120 ns with low voltage


    OCR Scan     		LH53V2R00 LH53V2R00N/T 32-pin LH53V2RQ0N LH53V2R00T OP032-P-0525) TSOP032-P-0820) 40DIP/40SOP/48TSOP sharp mask rom LH532K PDF

    LH532K

    Abstract: LH53V2R00N LH53V2R00T TSQP032-P-0820 LH5V2R 48TSOP 2mbit sharp mask rom LH532CXX
    Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage


    OCR Scan     		LH53V2R00 LH53V2R00N/T LH53V2R00N 32-pin OP032-P-0525) LH53V2R00T TSQP032-P-0820) Do-07 128kX LH532K TSQP032-P-0820 LH5V2R 48TSOP 2mbit sharp mask rom LH532CXX PDF

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


    OCR Scan     		109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506 PDF

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


    OCR Scan     		ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02 PDF

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


    OCR Scan     		LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout PDF

    lh5359

    Abstract: e5bx
    Text: Ffe MASK ROM * ★ • MASK ROMs New product Under development * Features • Product lineup covers 11 capacity ranges from 256 k-bit to 128 M-bit. • Product variations with 3 types o f pinout including JEDEC standard EPROM, Mask ROM specific and Flash memory compatible pinout.


    OCR Scan     		LH-532KXX LH532100BD/BN/BT/BS/BSR/BU 532048D 53V2P00A 532600D 532000B 532000BD LH-532C LH-5326XX lh5359 e5bx PDF

    lh532k

    Abstract: No abstract text available
    Text: NEW PRODUCT INFORMATION LH53V2R00 • Description Low-Voltage • High-Speed 2M-bit Mask-Programmable ROM Pin Connection The LH53V2R00N/T User's No. : LH5V2RXX is a CMOS 2M-bit mask-programmable ROM organized as 262 144 X 8 bits. It provides a high-speed access time of 120 ns with low voltage


    OCR Scan     		LH53V2R00 LH53V2R00N/T 32-pin LH53V2R00N LH53V2R00T OP032-P-0525) TSOP032-P-0820) 40DIP/40SOP/48TSOP lh532k PDF

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


    OCR Scan     		Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31 PDF