42-PIN
Abstract: 44-PIN 48-PIN LH53V8
Text: LH53V8000 FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words × 16 bit organization (Word mode) • Access times: 200 ns (MAX.) at 3.0 V ≤ VCC < 4.5 V 100 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • Power consumption: Operating: 550 mW (MAX.)
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PDF
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LH53V8000
42-PIN
48TSOP
48-pin,
42-pin,
600-mil
DIP042-P-0600)
44-pin,
44-PIN
48-PIN
LH53V8
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words × 16 bit organization (Word mode) • Access times: 200 ns (MAX.) at 3.0 V ≤ VCC < 4.5 V 100 ns (MAX.) at 4.5 V ≤ VCC ≤ 5.5 V • Power consumption: Operating: 550 mW (MAX.)
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Original
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PDF
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LH53V8000
42-pin,
600-mil
44-pin,
48-pin,
LH53V8000
48TSOP
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M5M23160
Abstract: TC5117400 oki cross kmm5322000a THM324080AS lh538000 424100 IBM025161 MC-421000A36 uPD482445
Text: OKI Semiconductor Memory Cross Reference 16-Meg DRAMs OKI Part Number MSM5116160 MSM5116400 MSM5117100 MSM5117400 MSM5117800 MSM51V16100 MSM51V16160 MSM51V16400 MSM51V17100 MSM51V17400 MSM51V18160 Configuration Voltage Refresh 1 Meg x 16 4 Meg x 4 16 Meg x 1
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Original
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PDF
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16-Meg
MSM5116160
MSM5116400
MSM5117100
MSM5117400
MSM5117800
MSM51V16100
MSM51V16160
MSM51V16400
MSM51V17100
M5M23160
TC5117400
oki cross
kmm5322000a
THM324080AS
lh538000
424100
IBM025161
MC-421000A36
uPD482445
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES C M O S 8 M 1 M x 8 / 5 1 2 K x 16 3 V - D r iv e M a s k - P r o g r a m m a b le R O M PIN CONNECTIONS • 1,048,576 words x 8 bit organization (Byte mode) 42-PIN DIP TOP VIEW r A-ie C 1« Ai? C 2 524,288 words x 16 bit organization
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OCR Scan
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PDF
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LH53V8000
42-PIN
48TSOP
48-pin,
42-pin,
600-mil
DIP042-P-0600)
44-pin,
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES • 1,048,576 words x 8 bit organization Byte mode C M O S 8M (1M x 8 / 5 1 2K x 16) 3 V -D rive M R O M PIN CONNECTIONS 42-P IN DIP TO P VIE W / 524,288 words x 16 bit organization (Word mode) 200 ns (MAX.) at 3.0 V < Vcc < 4.5 V 100 ns (MAX.) at 4.5 V < Vcc < 5.5 V
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OCR Scan
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PDF
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LH53V8000
42-pin,
600-mil
44-pin,
48-pin,
48TSOP
TSOP048-P-1218)
LH53V8000
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AG393
Abstract: d2625
Text: LH53V8000 FEATURES • 1,048,576 words x 8 bit organization Byte mode 524,288 words x 16 bit organization (Word mode) CMOS 8M (1M x 8 / 512K x 16) 3 V-Drive Mask-Programmable ROM PIN CONNECTIONS 42-PIN DIP TO P VIEW f [I C 2 41 D A fl C 3 40 □ Ag A.C 4
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OCR Scan
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PDF
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LH53V8000
42-pin,
600-mil
44-pin,
48-pin,
42-PIN
42-pln,
600-mll
44SOP
AG393
d2625
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Untitled
Abstract: No abstract text available
Text: LH53V8000 FEATURES • 1,048,576 words x 8 bit organization Byte mode CMOS 8M (1M x 8 / 512K x 16) 3 V-Drive MROM PIN CONNECTIONS 4 2 -P IN D IP T O P V IE W 524,288 words x 16 bit organization (Word mode) • Access times: A -I8 C 42 □ O E A -I7 c 2 41
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OCR Scan
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PDF
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LH53V8000
42-pin,
600-mil
44-pin,
48-pin,
44SOP
OP044-P-0600)
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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OCR Scan
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PDF
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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536G
Abstract: LH534600
Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)
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OCR Scan
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PDF
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LH53259D/N/T
LH53517D/N/T/TR
LH531VOOD/N/TAJ
LH53V1ROON/T
LH530800AD/AN/AU
LHS30800AD/AN-Y
LH531OOOBD/BN
LH531000BN-S
LH531024D/N/U
LH532100BD
536G
LH534600
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lh57257
Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429
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OCR Scan
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PDF
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IR2E201
IR2E24
IR2E27/A
IR2E28
IR2E29
IR2E30
IR2E31/A
IR2E32N9
IR2E34
IR2E41
lh57257
IR2E31
IR2E01
IR2C07
IR2E27
IR2E19
IR2E31A
IR3n06
IR2E02
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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OCR Scan
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PDF
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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flash 64m
Abstract: No abstract text available
Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161
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OCR Scan
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PDF
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100ns
120ns
150ns
256kj
LH53259
LH53517
LH531V00
LH530800A
LH531024
LH532048
flash 64m
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48 tsop flash pinout
Abstract: LH23512
Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)
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OCR Scan
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PDF
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LH2369
LH23126
LH23255
LH53259
LH23512
LH53517
LH53H0900
LH531VOO
LH530800A
LH530800A-Y
48 tsop flash pinout
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