Untitled
Abstract: No abstract text available
Text: PSRAM Low Voltage Low Power LH6P82Z1 8M 524Kx16 (120 ns) (TSOP)
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LH6P82Z1
524Kx16)
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PSRAM
Abstract: LH6P82Z1
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH6P82Z1 8M PSRAM Model No.: LH6P82Z1 Spec No.: EL097064A Issue Date: March 31, 1998 PSRAM, Low Voltage, Low Power, LH6P82Z1, 8M, (524K x 16), (120 ns), (TSOP)
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LH6P82Z1
LH6P82Z1)
EL097064A
LH6P82Z1,
PSRAM
LH6P82Z1
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MARKING AHW
Abstract: AHW MARKING CODE
Text: SHARP SHARP LH6P82Z1 •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company. •When using the products covered herein, please observe the conditions written herein
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LH6P82Z1
TSOP48-P-1218
AA1046
CV537
LH6P82Z1,
MARKING AHW
AHW MARKING CODE
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TIL 815
Abstract: EFSH E5EW sharp LQ0
Text: SHARP SPEC Ho. | M D G O 8 8 0 1 ISSUE: Aug. 7 1996 To ; Preliminary S P Product Type E C I F I C A T 8 M bit P S R A M I O N S 524,238xl6bit L H 6 P 8 2 Z 1 ïodel fio. (LH6P82Z1) EiThis specifications contains 25 Pages including the cover and appendix.
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238xl6bit)
LH6P82Z1)
IH6P82Z1
LH8P82Z1
TIL 815
EFSH
E5EW
sharp LQ0
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Untitled
Abstract: No abstract text available
Text: 48-PIN TSOP PINOUT 48-PIN T S O P TO P V IE W FEATURES r UB C 1 • • 524,288 x 16 bit organization LBC 2 • Power supply: A id a2c - Operating:+ 3 .3 ± 0.3V • Data retenti on : + 2.2 Vto + 3.6 V A cess ti me: 120 ns MÆC) • Cycletime 190 ns (MIN.)
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LH6P82Z1
48-PIN
I/O13
144mW
180pW
theLH6P82Z1.
EL097064;
SMT98014
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Untitled
Abstract: No abstract text available
Text: MEMORIES Pseudo Static RAMs w B it co n fig u ra tio n C apacity Model No. A cce ss tim e n s 60 - 256k x8 70 80 100 120 150 LH5P832 LH5P860 x8 LH5P864 512k LH5P1632 x 16 LH5P8128 1M Pseudo Static RAM x8 LH5P8129 x8 LH5PV8512 x 16 LH5PV16256 x 16 LH6P82
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LH5P832
LH5P860
LH5P864
LH5P1632
LH5P8128
LH5P8129
LH5PV8512
LH5PV16256
LH6P82
LH5P832/D/N-10
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