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    LOW NOISE NEC U Search Results

    LOW NOISE NEC U Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE NEC U Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: I ^ NEC • NEC Corporation GaAs MMIC UPG100B,P Low Noise Wide Band Amplifier PHYSICAL DIMENSIONS FEATURES Units in mm UPG100B • ULTRA WIDE BAND: 50 MHz to 3 GHz 1.27 ± 0.1 • LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz (LEADS 2,4,6,8) 0.6 1.27 + 0.1


    OCR Scan     		PDF UPG100B UPG100B 3260Jay

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS in mm Low-voltage, low-current, low-noise and high-gain • NF = 3.0 dB TYP.


    OCR Scan     		PDF 2SC3663 SC3663

    IC nec 555

    Abstract: nec b 536 transistor transistor marking T83 ghz
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 . 8 ± 0.2


    OCR Scan     		PDF 2SC4955 2SC4955-T1 2SC4955-T2 IC nec 555 nec b 536 transistor transistor marking T83 ghz

    transistor NEC D 822 P

    Abstract: NEC D 986 transistor NEC B 617 2SC4228 transistor NEC D 587 r44 marking transistor D 2624
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P NEC D 986 transistor NEC B 617 transistor NEC D 587 r44 marking transistor D 2624

    transistor NEC D 822 P

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4228 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4228 2SC4228 transistor NEC D 822 P

    transistor NEC D 587

    Abstract: 3181 R33 transistor c 3181
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4227 is a low supply voltage transistor designed for VHF, in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4227 2SC4227 SC-70 2SC4227-T1 transistor NEC D 587 3181 R33 transistor c 3181

    A 564 transistor

    Abstract: 3181 R33 transistor A 564
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.


    OCR Scan     		PDF 2SC4227 2SC4227 SC-70 A 564 transistor 3181 R33 transistor A 564

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5011

    NEC IC D 553 C

    Abstract: CB 548 transistor NEC D 553 C
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4955 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Low Noise, High Gain PACKAGE DIMENSIONS • Low Voltage Operation in millimeters • Low Feedback Capacitance 2 .8 ± 0.2 Cre = 0.4 pF TYP.


    OCR Scan     		PDF 2SC4955 2SC4955-T1 2SC4955-T2 NEC IC D 553 C CB 548 transistor NEC D 553 C

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC SILICON TRANSISTOR 2SC3663 NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION FEATURES • PACKAGE DIMENSIONS in mm Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. @Vce = 1 V, Ic = 250 /¿A, f = 1.0 GHz


    OCR Scan     		PDF 2SC3663

    NEC 2532 n 749

    Abstract: NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain • Low Voltage Operation


    OCR Scan     		PDF 2SC5014 2SC5014-T1 2SC5014-T2 2SC5014) NEC 2532 n 749 NEC 2532 PT1060 transistor NEC D 822 P transistor NEC D 587 NEC 2134 transistor transistor c 6091 transistor sp 772 SP 2822

    2sC4703

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4703 MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage V ce = 5 V . This low distortion


    OCR Scan     		PDF 2SC4703 2SC4703 OT-89)

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2

    transistor NEC D 882 p

    Abstract: transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 9 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5012 2SC5012-T1 2SC5012-T2 transistor NEC D 882 p transistor NEC b 882 p transistor NEC 882 p transistor NEC b 882 nec d 882 p transistor nec 358 amplifier transistor NEC D 587 34077 6069 marking

    CD 1691 CB

    Abstract: NEC 7924 NEC D 986 IC - 7434
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •


    OCR Scan     		PDF 2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434

    PC4574

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. //P C 4574 QUAD ULTRA LOW-NOISE, WIDEBAND, OPERATIONAL AMPLIFIER P in C o n fig u ra tio n D e sc rip tio n T h e/u P C 4 5 7 4 is an ultra low noise, high slew rate quad o p eratio n al a m p lifie r sp ecifically designed fo r audio,


    OCR Scan     		PDF /PC4574C PC4574

    3563 1231

    Abstract: transistor NEC B 617 nec d 1590
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5015 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS in millimeters • Small Package • High Gain Bandwidth Product fr = 12 GHz TYP. • Low Noise, High Gain


    OCR Scan     		PDF 2SC5015 2SC5015-T1 2SC5015-T2 3563 1231 transistor NEC B 617 nec d 1590

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. Description //P C 4 55 8 DUAL HIGH-PERFORMANCE OPERATIONAL AM PLIFIER Pin Configuration The ¿ PC4558 is a dual operational am plifier with internal frequency compensation. Using low noise lateral PNP input transistors on the am plifier inputs


    OCR Scan     		PDF PC4558 RC4558 3-002157A

    2SK571

    Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
    Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN


    OCR Scan     		PDF b427mM QQ022TD NE720 NE72000 Rn/50 NE72000 2SK571 NE72084 NE72089 2SK571 equivalent ga 132 2SK57-1

    nec 2501 Le 629

    Abstract: 3771 nec nec d 1590
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5186 2SC5186 2SC5186-T1 nec 2501 Le 629 3771 nec nec d 1590

    IC3208

    Abstract: No abstract text available
    Text: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT uPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿ iP G 1 0 5 B -1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has amplifiers to achieve high linear gain.


    OCR Scan     		PDF uPG105B-1 PG105B-1 IC3208

    NF 831

    Abstract: No abstract text available
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.


    OCR Scan     		PDF 2SC5186 2SC5186-T1 NF 831

    NE64800

    Abstract: No abstract text available
    Text: NEC/ CALIFORNIA NEC SbE D b4S74m 0D02433 4^3 K-BAND BIPOLAR OSCILLATOR TRANSISTOR • NE64800 OUTLINE DIMENSIONS FEATURES NECC Units in jjm NE64800 (CHIP) • FUNDAMENTAL OSCILLATIO N GREATER THAN 20 GHz • LOW PHASE NOISE • OPERATION OVER M IL-SPEC TEMP RANGES


    OCR Scan     		PDF b4S74m 0D02433 NE64800 NE64800

    em 6695

    Abstract: LA 8873
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise • N F = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • N F = 1.3 dB typ.


    OCR Scan     		PDF 2SC5184 SC-70 2SC5184-T1 2SC5184-T2 em 6695 LA 8873