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    LOW NOISE R.F Search Results

    LOW NOISE R.F Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW NOISE R.F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B3RX1618

    Abstract: radar front end X-band marine radar
    Text: B3RX1618 X-Band Low Noise Receiver Front End DESCRIPTION The B3RX1618 is a protected low noise front end for Xband marine radar receivers. It comprises an internal microstrip limiter, a low noise amplifier, an image rejection mixer and an electronically tuned local oscillator.


    Original     		PDF B3RX1618 M209914A radar front end X-band marine radar

    k2800

    Abstract: No abstract text available
    Text: Our Performance Your Reputation 100MHz Low Noise/Low G-Sensitivity OCXO NA-100MK2800 series K2800 Series in 25.4x25.4mm DIP package NA-100MK2800 series is a 100.000 MHz high performance VC OCXO offering low phase noise(LPN), low G sensitivity(LGS) and tight frequency stability down to


    Original     		PDF 100MHz NA-100MK2800 K2800 50ppb Measurem100 -40oC~ NA-100MK2800 NA-100MK2801 NA-100MK2802

    B3RX1620

    Abstract: X-band amplifier WR90 waveguide switch X-band marine radar
    Text: B3RX1620 X-Band Low Noise Front End TYPICAL OPERATION Operating Conditions DESCRIPTION Operating voltage . . . . Signal frequency . . . . Local Oscillator frequency tuning voltage 4V . . . . tuning voltage 24V . . . The B3RX1620 is a low noise front end for X-band


    Original     		PDF B3RX1620 M209915A X-band amplifier WR90 waveguide switch X-band marine radar

    Untitled

    Abstract: No abstract text available
    Text: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place


    Original     		PDF 100MHz VL-100MHz -40oC JESD22-B103 MIL-STD-883 JESD22-A104 1500G, JESD22-B104 T0057-O-044-3

    Untitled

    Abstract: No abstract text available
    Text: 100MHz Very Low Noise VCXO VL-Type series VL-Type Series in 9 x 14mm SMD package VL-100MHz series is a 100.000 MHz high performance VCXO offering high frequency and very low phase noise. The part comes in a small SMD package which makes it suitable for reflow soldering during pick and place


    Original     		PDF 100MHz VL-100MHz -40oC VLCUVLWAFF-100M VLCUVLWAGF-100M VLCUVLWAJF-100M

    low noise transistors rf

    Abstract: No abstract text available
    Text: Silicon Low Noise Bipolar Transistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


    OCR Scan     		PDF

    transistor K 2056

    Abstract: MA42120 K 2056 transistor 2N6665 MA42001-509 2N5054 2n5651 MA42005 MA-42120 2N2857 Model
    Text: /yfaom Silicon Low Noise Bipolar T ransistors Features • LOW NOISE THROUGH 2.5 GHz ■ HERMETIC PACKAGE ■ CAN BE SCREENED TO JAN, JANTX, JANTXV LEVELS Description The series of Silicon NPN bipolar transistors are designed for low noise amplifiers in the frequency range of 60 MHz


    OCR Scan     		PDF

    GaAs Low Noise Amplifier

    Abstract: No abstract text available
    Text: MONOLITHIC GaAs LOW NOISE AMPLIFIER TACHCNICS ï TCWL-01 CORPORATION ADVANCE INFORMATION DATA SHEET Septem ber, 1987 Features: • • • • • Broad Band .05-4 GHz Low Noise Figure Low Gain Ripple ± .75 dB Gold Metalization Nitride Passivation Description:


    OCR Scan     		PDF TCWL-01( TCWL-0102 TC-02 GaAs Low Noise Amplifier

    Untitled

    Abstract: No abstract text available
    Text: RF FRONT END ASSEMBLY ML RX-1000 LOW NOISE RF FRONT END 8 TO 12 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Tunable Local Oscillator ♦ Low Noise Figure ♦ High Image Rejection DESCRIPTION ML RX-1000 Series general purpose front ends feature waveguide RF input, varactor tunable L.O., BITE monitor and


    OCR Scan     		PDF RX-1000 RX-1000

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TX/RX FRONT END MLTR-1400 LOW NOISE RADAR R.F. HEAD ASSEMBLY 4 T O 8 GHz FEATURES ♦ ♦ ♦ ♦ ♦ Low Size/Weight Hybrid Technology Frequency Agile Low Noise Figure Wide Dynamic Range DESCRIPTION M L T R -1400 fro n t ends, designed and m an u fa ctu re d in the U .K . are com pact, pulsed, freq u en cy


    OCR Scan     		PDF MLTR-1400 1500g -810C

    Vo 80500 TRANSISTOR

    Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A


    OCR Scan     		PDF NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400

    Untitled

    Abstract: No abstract text available
    Text: AfaCOM RADAR SYNTHESISER MLS-1400 FAST SWITCHING LOW NOISE SYNTHESISER FEATURES ♦ Fast Switching ♦ Low Phase Noise and Spurious ♦ Small Size ♦ Fixed LO Outputs ♦ Full Military Specification DESCRIPTION Designed for lightweight frequency agile radars MLS-1400 uses phase locked direct synthesis techniques to achieve


    OCR Scan     		PDF MLS-1400 MLS-1400 18GHz MIL-S-810D,

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,


    OCR Scan     		PDF bbS3T31 LAE6000Q

    ZC830

    Abstract: ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825
    Text: E-LINE DIODE SPECIFICATIONS SCHOTTKY BARRIER DIODES These devices have a high breakdown voltage and ultra fast sw itching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 infi832A ZC833A ZC834A ZC835A ZC836A ZC830) ZC830 ZC820 ZC821 ZC822 ZC823 ZC824 ZC825

    Untitled

    Abstract: No abstract text available
    Text: MULTI CHANNEL SOURCES MLO-16000 PHASE LOCKED MULTI CHANNEL SOURCES 1-18 GHz FEATURES ♦ Low Phase Noise ♦ Low Phase Hits ♦ Low Spurious ♦ Low Microphony ♦ Slimline Package DESCRIPTION MLO-I6OOO series sources provide up to 10 customer selectable frequencies over a 4% bandwidth. A


    OCR Scan     		PDF MLO-16000 MIL-STD-810D

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TX/RX RF FRONT END MLTR-1200 F.M. C.W. RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ Compact/Low Weight ♦ Low Cost ♦ Variable Output Power ♦ AM/FM Modulation ♦ Low Noise Figure DESCRIPTION MLTR-1200 front ends are designed for F.M. C.W. radars where size and weight are at a premium and where a very


    OCR Scan     		PDF MLTR-1200 MLTR-1200 26dBm -30dBm -810C

    FMMV105G

    Abstract: fmmv2109 ZC2800 ZC2811 ZC5800 ZC820 ZC821 ZC822 ZC823 ZC824
    Text: E-LINE DIODE SPECIFICATIONS SCH O TTK Y BARRIER DIO DES These devices have a high breakdown voltage and ultra fast switching capabilities. R.F. applications include low noise mixers, large and small signal detectors, limiters and discriminators. Applications


    OCR Scan     		PDF 10/iA ZC2800 ZC2811 ZC5800 ZC2800-ZC5800 ZC2811 OT-23 ZC2800E rZC2810E ZC2811E FMMV105G fmmv2109 ZC820 ZC821 ZC822 ZC823 ZC824

    ZBF579

    Abstract: No abstract text available
    Text: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35


    OCR Scan     		PDF ZBF569 ZBF579 500MHz ZBF579

    SPSD

    Abstract: No abstract text available
    Text: PHASE LOCKED OSCILLATOR MODULES MLO-27700 & MLO-27800 Series MINIATURE PHASE LOCKED OSCILLATOR MODULES PLVCO MLO-27800 PLVCXO MLO-27700 FEATURES ♦ Miniaturised ♦ Low Phase Noise ♦ Low Power Consumption ♦ Proven Synthesiser Building Blocks Full Size


    OCR Scan     		PDF MLO-27700 MLO-27800 MLO-27700 MLO-27800 LO-27700 LO-27800 -120dBc -160dBc/Hz SPSD

    ZTX3866

    Abstract: ZTX325 ZTX327 2N2708 Transistor 2N3866 2N3866 2N4427 2N918 BFS17 BFY90
    Text: R.F. TRANSISTORS AND DIODES TABLE 1 : NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range of high frequency applications where high fT, low noise and low intermodulation distortion features are required. Typical applications include UHF/VHF amplifiers, communications equipments, domestic and automotive


    OCR Scan     		PDF 2N3866 ZTX327 ZTX3866 MPSH10 OT-23 2N4427 2N2708 BFY90 ZTX325 BFS17 Transistor 2N3866 2N918

    ztx323

    Abstract: HF transistors table ZTX327 ZTX325
    Text: R.F. TR A N S IS T O R S A N O DIODES TABLE 1: NPN RF TRANSISTORS TO 1 WATT The transistors shown in this table are suitable for use in a wide range o f high frequency applications where high f T, low noise and low intermodulation distortion features are required.


    OCR Scan     		PDF 2N3866 ZTX327 ZTX3866 MPSH10 FMMTH10 2N4427 2N2708 BFY90 ZTX325 BFS17 ztx323 HF transistors table

    radar block diagram

    Abstract: No abstract text available
    Text: INTEGRATED TX/R X FRONT END MLTR-1300 PULSED RADAR R.F. HEAD ASSEMBLY 4 TO 8 GHz FEATURES ♦ High Stability ♦ Low Power Consumption ♦ High Gain ♦ Low Noise Figure ♦ High Output Power DESCRIPTION M LTR-1300 Series Pulsed T ransm itter/R eceivers interface at antenna and baseband in radar systems


    OCR Scan     		PDF MLTR-1300 LTR-1300 100MHz 30dBm -88dB X35mm MIL-STD-810C radar block diagram

    E288CC

    Abstract: No abstract text available
    Text: PHILIPS SQ |Ë288CC| SPECIAL QUALITY. LONG LIFE DOUBLE TRIODE with high mutual conductance and low noise for use in cascode circuits, in R.F. or X.F. amplifiers HEATIKQ Indirect by A.C. or D.C.; parallel supply Heater voltage Vf = 6.3 V Heater current If • 475 mA


    OCR Scan     		PDF E288CC E288CC

    CP640

    Abstract: TELEDYNE CRYSTALONICS TMF18 2SC140
    Text: POW RFET CP640 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424, PG. 58 • FOR HIGH DYNAMIC RANGE R.F. AMPLIFIERS • SPECIFIED FOR H.F. BAND - USEABLE THRU 400 MHz • LOW NOISE FIGURE DIRECT FROM 50 Ohm LINE ELECTRICAL D ATA


    OCR Scan     		PDF CP640 TMF18 CP640 TELEDYNE CRYSTALONICS 2SC140