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    NE688 Price and Stock

    California Eastern Laboratories (CEL) NE68819-A

    RF TRANS NPN 6V 5GHZ 3SMINIMOLD
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    California Eastern Laboratories (CEL) NE68833-A

    RF TRANS NPN 6V 4.5GHZ SOT23
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    California Eastern Laboratories (CEL) NE68830-A

    RF TRANS NPN 6V 4.5GHZ SOT323
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    California Eastern Laboratories (CEL) NE68819-T1

    RF TRANS NPN 6V 5GHZ 3SMINIMOLD
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    California Eastern Laboratories (CEL) NE68819-T1-A

    NPN SILICON AMPLIFIER AND OSCILL
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    NE68819-T1-A Cut Tape 1
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    NE688 Datasheets (39)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE688 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68800 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68800 NEC NECs NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68818 NEC Semiconductor Selection Guide Original PDF
    NE68818 NEC NPN Silicon Transistor. Original PDF
    NE68818-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68818-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68818-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68819 Unknown Original PDF
    NE68819 NEC Semiconductor Selection Guide Original PDF
    NE68819 NEC NPN Silicon Transistor. Original PDF
    NE68819-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANSISTOR NPN 2GHZ MINIMOLD Original PDF
    NE68819-T1 California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SMD Original PDF
    NE68819-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68819-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68819-T1-A California Eastern Laboratories SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF
    NE68830 NEC Semiconductor Selection Guide Original PDF
    NE68830 NEC NPN Silicon Transistor. Original PDF
    NE68830-A California Eastern Laboratories RF Transistors (BJT), Discrete Semiconductor Products, TRANS NPN 2GHZ SOT-323 Original PDF
    NE68830-T1 NEC SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR Original PDF

    NE688 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL SCHEMATIC NE68808 CCBPKG 0.001 pF CCB 0.29 pF LC 0.31 nH Collector LCX 0.31 nH RCpkg 0.1 Ohm Base Rbpkg 0.1 ohm Lbx LB 0.7 nH 0.7nH CCE 0.45 pF CCEPKG CCBPKG 0.35 pF 0.2 pF LEX 0.2 nH Repkg 0.15 ohm Emitter BJT NONLINEAR MODEL PARAMETERS 1


    Original     		PDF NE68808 8e-16 8e-15 5e-16 8e-12 55e-12 11e-12 5e-14 29e-12

    NEC 1357

    Abstract: No abstract text available
    Text: NONLINEAR MODEL Q1 CCBPKG SCHEMATIC NE68833 CCB LCX LBX Collector LB Base CCE CBEPKG CCEPKG LE LEX Emitter BJT NONLINEAR MODEL Parameters Q1 PARAMETERS 1 Parameters Q1 UNITS Parameter Units time seconds farads IS 3.8e-16 MJC 0.48 capacitance BF 135.7 XCJC


    Original     		PDF NE68833 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12 NEC 1357

    NE688

    Abstract: S21E UPA814T UPA814T-T1
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour S21E UPA814T-T1

    2SC5651

    Abstract: NE688 NE688M23 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M23 OUTLINE DIMENSIONS Units in mm FEATURES • PACKAGE OUTLINE M03 NEW MINIATURE M23 PACKAGE: – World's smallest transistor package footprint — leads are completely underneath package body – Low profile/0.55 mm package height


    Original     		PDF NE688M23 NE688M23 24-Hour 2SC5651 NE688 S21E

    32E-12

    Abstract: 32e12 35E16
    Text: NONLINEAR MODEL SCHEMATIC NE688M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 capacitance farads BF 135.7 XCJC 0.56 inductance henries


    Original     		PDF NE688M03 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 688M03 32e12 35E16

    S21E

    Abstract: UPA809T UPA809T-T1 NE688 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR UPA809T OUTLINE DIMENSIONS Units in mm FEATURES • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA809T NE688 UPA809T 24-Hour S21E UPA809T-T1 npn dual emitter RF Transistor Drive Base BJT 38E-15 transistor mje 350

    bjt microwave GHz

    Abstract: BJT IC Vce 38E-16
    Text: NE68800 NONLINEAR MODEL SCHEMATIC Q1 CCB LB LC CCE LE BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 time seconds BF 135.7 XCJC 0.56 capacitance farads henries NF 1 CJS inductance VAF 28 VJS 0.75 resistance


    Original     		PDF NE68800 8e-16 8e-15 5e-16 796e-12 549e-12 0e-12 032e-9 24e-12 27e-12 bjt microwave GHz BJT IC Vce 38E-16

    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE68818 SCHEMATIC CCBPKG CCB LCX LBX LB Collector LC CCE Base CCEPKG LE CBEPKG LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 IS 3.8e-16 MJC 0.48 0.56 BF 135.7 XCJC NF 1 CJS VAF 28 VJS 0.75 IKF 0.6 MJS ISE 3.8e-15


    Original     		PDF NE68818 8e-16 8e-15 5e-16 796e-12 549e-12 11e-12 32e-12 5e-14 24e-12

    8003* transistor

    Abstract: UPA814T UPA814T-T1 NE688 S21E transistor C 110 transistor f 20 nf
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz


    Original     		PDF UPA814T NE688 UPA814T UPA814T-T1, 24-Hour 8003* transistor UPA814T-T1 S21E transistor C 110 transistor f 20 nf

    NE68830-T1-A

    Abstract: 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68819 NE68830 NE68833 131300
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68830-T1-A 2SC5193 2SC5194 2SC5195 NE68818 NE68819 NE68830 NE68833 131300

    NE68819

    Abstract: ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE688 NE68818 NE68830
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68833-T1 NE68839-T1 NE68839R-T1 NE68819 ic NE 5532 LS 1017 BJT BF 331 2SC5193 2SC5194 2SC5195 NE68818 NE68830

    BJT BF 331

    Abstract: NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195 NE688
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 NE688 NE68800 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 BJT BF 331 NE68819 NE68833 NE688 SERIES 901 704 16 08 55 2SC5191 2SC5193 2SC5194 2SC5195

    NE688M13

    Abstract: EIAJ 2SC5616 NE688 S21E
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M13 OUTLINE DIMENSIONS Units in mm FEATURES • • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz +0.1 0.5 –0.05 +0.1 0.15 –0.05 0.3 1 2 0.35 XX • PACKAGE OUTLINE M13 NEW MINIATURE M13 PACKAGE: – Small transistor outline –


    Original     		PDF NE688M13 NE688M13 24-Hour EIAJ 2SC5616 NE688 S21E

    NE688

    Abstract: S21E UPA814T UPA814T-T1 UPA814T-T1-A
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA814T NE688 UPA814T S21E UPA814T-T1 UPA814T-T1-A

    2SC5437

    Abstract: NE688 NE688M03 S21E 15E14
    Text: PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz • LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) TS • PACKAGE OUTLINE M03


    Original     		PDF NE688M03 NE688M03 2SC5437 NE688 S21E 15E14

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package • LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: fT = 9 GHz • HIGH COLLECTOR CURRENT: 100 mA


    Original     		PDF UPA814T NE688 UPA814T IS21eI2 IS21EI UPA814T-T1 24-Hour

    BR 123

    Abstract: NE68819 03E-12
    Text: NONLINEAR MODEL SCHEMATIC CCBPKG 0.08 pF NE68819 Q1 CCB LBX LCX 0.24 pF LB CCE 0.27 pF Base 0.19 nH 1.12 nH CBEPKG 0.3 pF LE 0.6 nH 0.5 nH Collector CCEPKG 0.3 pF LEX 0.19 nH Emitter BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 UNITS Parameter


    Original     		PDF NE68819 8e-16 8e-15 0e-12 24e-12 27e-12 12e-9 08e-12 3e-12 BR 123 NE68819 03E-12

    LB 1639

    Abstract: C 4804 transistor
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1.5 dB at 2.0 GHz • LOW VOLTAGE OPERATION • LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: IC MAX = 100 mA • AVAILABLE IN SIX LOW COST PLASTIC SURFACE


    Original     		PDF NE688 8839R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LB 1639 C 4804 transistor

    Vo 80500 TRANSISTOR

    Abstract: ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES_ • LOW PHASE NOISE DISTORTIO N • LOW NOISE: 1 .5 dB at 2 .0 G H z • LOW VO LTAG E OPERATION • LARGE ABSOLUTE M AXIM UM CO LLEC TO R CU RREN T: Ic M A X = 1 0 0 m A


    OCR Scan     		PDF NE688 OT-143) PACKAGEOUTUNE39R NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 Vo 80500 TRANSISTOR ST 80500 ap 4606 ST 80500 transistor q 1257 transistor IR 9342 2110 transistor NE68819 SOT143 L03 0828 30400

    NEC 1357

    Abstract: 1357 transistor NEC nec transistor 1357 transistor NEC 1357
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 FEATURES • OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    OCR Scan     		PDF NE688M03 NE688M03 24-Hour NEC 1357 1357 transistor NEC nec transistor 1357 transistor NEC 1357

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES UPA814T OUTLINE DIMENSIONS Units in mm SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package PACKAGE OUTLINE S06 2 . 1 + 0.1 LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz -


    OCR Scan     		PDF NE688 UPA814T UPA814T UPA814T-T1, 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ . SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package * LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz • HIGH GAIN BANDWIDTH: f t = 9 GHz . HIGH COLLECTOR CURRENT: 100 mA UPA809T


    OCR Scan     		PDF NE688 UPA809T UPA809T UPA809T-T1 24-Hour

    LM 4863 D

    Abstract: LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225
    Text: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE688 SERIES FEATURES • LOW PHASE NOISE DISTORTION • LOW NOISE: 1 .5 dB at 2.0 GHz . LOW VOLTAGE OPERATION . LARGE ABSOLUTE MAXIMUM COLLECTOR CURRENT: Ic MAX = 100 mA 18 SOT 343 STYLE 19 (3 PIN ULTRA SUPER


    OCR Scan     		PDF NE688 NE68818-T1 NE68819-T1 NE68830-T1 NE68833-T1 NE68839-T1 NE68839R-T1 LM 4863 D LD 7576 OS TI01W IC sj 4558 sj 4558 lm/ITE 8987 transistor LT 6225 sj 2518 CI sj 4558 lt 6225

    4 ghz transistor

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON TRANSISTOR NE688M03 OUTLINE DIMENSIONS Units in mm FEATURES • • PACKAGE OUTLINE M03 NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance


    OCR Scan     		PDF NE688M03 NE688M03 4 ghz transistor