Contextual Info: rZ J S G S -T H O M S O N * 7 0 * llQ g li2 ( 0 II IL i( g r a iD ( @ i M28C17 PARALLEL ACCESS 16K (2K x 8) EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 70ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100^A

Contextual Info: SGS-THOMSON llllM J ilL liM W Iie i M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTIO N • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

Contextual Info: SGS-THOMSON IIIIM J ì ILIì M W M28C17 IIÈ Ì 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ > ■ > ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

M28C16

Abstract: M28C16B M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection DATA BRIEFING • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

A9 pin contact

Abstract: 90K-1 A10E
Contextual Info: M28C17 PARALLEL 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION DATA BRIEFING FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

TOOC

Contextual Info: SGS-THOMSON M28C17 [M D M [iL [iO T [M O (g S 16K (2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE:

M28C16

Abstract: M28C16A M28C17 PDIP28 PLCC32
Contextual Info: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM DATA BRIEFING FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation

byt92

Abstract: M28C16 M28C17 PDIP28 PLCC32 S028 byt9
Contextual Info: rZ T S G S -1 H 0 M S 0 N M28C17 S S l[l @ lfiî IlL I(M i3 © R !lD (g i PARALLEL ACCESS 16K 2K x 8 EEPROM PRODUCT PREVIEW - FAST ACCESS TIME: 70ns • SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100^A

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16 Kbit 2Kb x8 Parallel EEPROM FAST ACCESS TIME: – 150ns at 5V – 250ns at 3V SINGLE SUPPLY VOLTAGE: – 5V ± 10% for M28C16A and M28C17A – 2.7V to 3.6V for M28C16-xxW LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation

28C17

Contextual Info: SGS-THOMSON M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 90ns ■ SINGLE 5 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max

Contextual Info: M28C16A M28C17A 5 F . 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V tor M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE PDIP28 (BS)

M28C16B

Abstract: M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection NOT FOR NEW DESIGN • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■

Contextual Info: rZ T SGS-THOMSON ^ 7 # . raDwunnteinMiiiiiDei M28C16A M28C17a 16K 2K x 8 PARALLEL EEPROM • > > ■ ■ ■ ■ ■ FAST ACCESS TIME: 150ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE - 32 Bytes Page Write Operation - Byte or Page Write Cycle: 5ms

M28C16

Abstract: M28C16A M28C17 PDIP28 PLCC32
Contextual Info: M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

M28C16A

Abstract: M28C17A PDIP28 PLCC32
Contextual Info: M28C16A M28C17A 16K 2K x 8 PARALLEL EEPROM DATA BRIEFING FAST ACCESS TIME: 150ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE – 32 Bytes Page Write Operation – Byte or Page Write Cycle: 5ms ENHANCED END OF WRITE DETECTION – Ready/Busy Open Drain Output

M28C16

Abstract: M28C17 PDIP28 PLCC32
Contextual Info: M28C17 PARALLEL 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

PLCC32

Abstract: M28C16B M28C17B
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

Contextual Info: M 28C 16A M 28C 17A 16 Kbit 2Kb x8 Parallel EEPROM • FAST ACCESS TIME: - 150ns at 5V - 250ns at 3V ■ SINGLE SUPPLYVOLTAGE: - 5V ± 10% for M28C16A and M28C17A - 2.7V to 3.6V for M28C16-xxW ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE I PDIP28 (BS)

M28C16B

Abstract: M28C17B PLCC32
Contextual Info: M28C16B M28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at VCC=5V ■ Single Supply Voltage: – 4.5 V to 5.5 V for M28CxxB – 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

Contextual Info: M 28C16B M 28C17B 16 Kbit 2K x 8 Parallel EEPROM With Software Data Protection PRELIMINARY DATA • Fast Access Time: 90 ns at Vcc=5V ■ Single Supply Voltage: - 4.5 V to 5.5 V for M28CxxB - 2.7 V to 3.6 V for M28CxxB-W ■ Low Power Consumption ■ Fast BYTE and PAGE WRITE (up to 64 Bytes)

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS