M28F410
Abstract: No abstract text available
Text: M28F410 4 Mb x8/x16, Block Erase FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F410
x8/x16,
0020h
00F2h
M28F410
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PDF
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M28F410
Abstract: No abstract text available
Text: M28F410 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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M28F410
512Kb
256Kb
0020h
00F2h
M28F410
DQ15A
AI02267
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PDF
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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Original
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M28F410/420,
M28F411/421
T6-U10:
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
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PDF
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Untitled
Abstract: No abstract text available
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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Original
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M28F410/420,
M28F411/421
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
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PDF
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M28F410
Abstract: M28F420 TSOP56
Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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Original
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M28F410
M28F420
TSOP56
20/25mA
M28F410
M28F420
TSOP56
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PDF
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M28F410
Abstract: No abstract text available
Text: M28F410 4 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware
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Original
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M28F410
x8/x16,
0020h
00F2h
M28F410
DQ15A
AI02267
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PDF
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M28F410
Abstract: M28F420 TSOP56
Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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Original
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M28F410
M28F420
TSOP56
20/25mA
M28F410
M28F420
TSOP56
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PDF
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M28F410
Abstract: H1A1
Text: M28F410 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Top location) with hardware
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Original
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M28F410
512Kb
256Kb
0020h
00F2h
M28F410
H1A1
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PDF
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M28F411
Abstract: M28F420
Text: QUALIFICATION REPORT M28F410/420, M28F411 T6-U20: 4 Mb FLASH MEMORIES in SO44 and TSOP40, AGRATE R1 DIFFUSION LINE INTRODUCTION The M28F410/420 are 4Mb Dual Supply 5/12V Boot Block Flash memories organised as 512K x 8 bits or 256K x 16 bits. The M28F411 is a 4 Mb Dual Supply (5/12V) Boot Block Flash memory organised as
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Original
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M28F410/420,
M28F411
T6-U20:
TSOP40,
M28F410/420
5/12V)
T6-U20
M28F420
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PDF
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M28F410
Abstract: M28F420 TSOP56
Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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Original
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M28F410
M28F420
TSOP56
20/25mA
M28F410
M28F420
TSOP56
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter
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Original
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M28F410
M28F420
20/25mA
TSOP48
100ns
120ns
TSOP48
M28F420
AI01133C
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PDF
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TSOP40
Abstract: M28F410 M28F411
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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Original
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M28F410/420,
M28F411/421
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
TSOP40
M28F410
M28F411
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PDF
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TSOP40
Abstract: M28F410 M28F411
Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power
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Original
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M28F410/420,
M28F411/421
T6-U10:
TSOP40
M28F410/420
5/12V)
512Kx8
256Kx16
TSOP40
M28F410
M28F411
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PDF
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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Original
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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PDF
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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PDF
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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Original
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PDF
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Untitled
Abstract: No abstract text available
Text: £jJ SGS-THOMSON 0 iMDIŒ ra(M0©S M28F410 4 Mb (x8/x16, Block Erase FLASH MEMORY • 5V ± 10% SUPPLY VOLTAGE ■ 12 V ± 5 % o r± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F410
x8/x16,
0020h
00F2h
M28F410
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F410 M28F420 SGS-THOMSON m _ 4 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS
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OCR Scan
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M28F410
M28F420
x8/x16,
0020h
M28F410:
00F2h
M28F420:
M28F420
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PDF
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tower pro sg 90
Abstract: No abstract text available
Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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OCR Scan
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M28F410
M28F420
andx16
TSOP56
20/25mA
M28F410,
7W1S37
tower pro sg 90
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F410 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F410
512Kb
256Kb
0020h
00F2h
M28F410
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PDF
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Untitled
Abstract: No abstract text available
Text: 5 7 . M28F410 M28F420 S G S -T H O M S O N 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S 0 4 4 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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OCR Scan
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M28F410
M28F420
TSOP56
20/25m
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PDF
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Z3A11
Abstract: A10113 M28F410 M28F420 TSOP56
Text: M28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or
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OCR Scan
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M28F410
M28F420
TSOP56
x20mm
TSOP56
20/25m
Byte/50
M28F410,
Z3A11
A10113
M28F420
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PDF
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Untitled
Abstract: No abstract text available
Text: SGS-IHOMSON M28F410, F420 M28V410, V420 ¡y CMOS 4 Megabit x8 or x16, 7 Block Erase FLASH MEMORY ADVA N CE DATA • SMALL SIZE TSOP56 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver sion ■ DUAL x8 and x16 ORGANISATION ■ MEMORY ERASE in BLOCKS
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OCR Scan
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M28F410,
M28V410,
TSOP56
M28F410
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PDF
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Untitled
Abstract: No abstract text available
Text: M28F410, F420 M28V410, V420 SGS-IHOMSON lit CMOS 4 Megabit x8 or x16, 7 Block Erase _ FLASH MEMORY ABBREVIATED DATA • SMALL SIZE TSOP56 and S044 PLASTIC PACKAGES - Normal and Reverse Pinout for TSOP ver sion ■ DUAL x8 and x16 ORGANISATION
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OCR Scan
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M28F410,
M28V410,
TSOP56
M28F420,
VA01133
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PDF
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