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    STMicroelectronics M28F420-120M1

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    Quest Components M28F420-120M1 29
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    STMicroelectronics M28F420120M1

    4 MEGABIT (512KILOBIT X8 OR 256KILOBIT X16, BOOT BLOCK) FLASH MEMORY Flash, 512KX8, 120ns, PDSO44
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    ComSIT USA M28F420120M1 111
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    M28F420 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M28F420 STMicroelectronics 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY Original PDF
    M28F420 STMicroelectronics 4-Megabit Flash Memory Scan PDF
    M28F420-100M1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-100M3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-100M6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-100N1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-100N3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-100N6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120M1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120M3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120M6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120N1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120N3 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-120N6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-70XM1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-70XM6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-70XN1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-70XN6 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-80M1 SGS-Thomson EEPROM Parallel Async Original PDF
    M28F420-80M6 SGS-Thomson EEPROM Parallel Async Original PDF

    M28F420 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1004

    Abstract: M28F220 M28F410 M28F411 M28F420 M28W431
    Text: AN1004 APPLICATION NOTE WRITE PROTECT FUNCTION for 2Mb and 4Mb BOOT BLOCK FLASH MEMORIES INTRODUCTION The performance of the 2Mb and 4Mb Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using


    Original     		PDF AN1004 M28F220, M28F420, M28F411, M28W431 T6-U20) AN1004 M28F220 M28F410 M28F411 M28F420

    M28F410

    Abstract: M28F420 TSOP56
    Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    Original     		PDF M28F410 M28F420 TSOP56 20/25mA M28F410 M28F420 TSOP56

    M28F220

    Abstract: AN1004 M28F410 M28F411 M28F420 M28W431
    Text: AN1004 APPLICATION NOTE Write Protect Function for 2 Mbit and 4 Mbit Boot Block Flash Memories INTRODUCTION The performance of the 2 Mbit and 4 Mbit Dual Voltage Boot Block Flash memories, M28F220, M28F420, M28F411, M28W431 has been enhanced by the introduction of a Boot Block Write Protect function using


    Original     		PDF AN1004 M28F220, M28F420, M28F411, M28W431 T6-U20) M28F220 AN1004 M28F410 M28F411 M28F420

    DQ111

    Abstract: M28F420 flash memory 5V DQ15A1
    Text: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware


    Original     		PDF M28F420 512Kb 256Kb 0020h 00FAh M28F420 DQ15A 120ns DQ111 flash memory 5V DQ15A1

    M28F410

    Abstract: M28F420 TSOP56
    Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    Original     		PDF M28F410 M28F420 TSOP56 20/25mA M28F410 M28F420 TSOP56

    M28F420

    Abstract: No abstract text available
    Text: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware


    Original     		PDF M28F420 512Kb 256Kb 0020h 00FAh A0-A16 DQ8-DQ14 DQ15A M28F420

    M28F420

    Abstract: 00FAH
    Text: M28F420 4 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS – Boot Block (Bottom location) with hardware


    Original     		PDF M28F420 x8/x16, 0020h 00FAh M28F420 DQ15A 120ns AI01133D 00FAH

    M28F410

    Abstract: M28F420 TSOP56
    Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and SO44 MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    Original     		PDF M28F410 M28F420 TSOP56 20/25mA M28F410 M28F420 TSOP56

    Untitled

    Abstract: No abstract text available
    Text: M28F410 M28F420 4 Megabit x8 or x16, Block Erase FLASH MEMORY DATA BRIEFING DUAL x8 and x16 ORGANIZATION MEMORY ERASE in BLOCKS – One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and erase protection – Two 8K Byte or 4K Word Key Parameter


    Original     		PDF M28F410 M28F420 20/25mA TSOP48 100ns 120ns TSOP48 M28F420 AI01133C

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		PDF M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 T6-U10: 4 Mbit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 T6-U10: TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16

    TOP SIDE MARKING M27C512

    Abstract: No abstract text available
    Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    M27C512 SGS-THOMSON

    Abstract: M2201 ST93C46
    Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8


    Original     		PDF

    BV-1 501

    Abstract: mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics
    Text: QRR9704 QUALITY & RELIABILITY REPORT January 1997 to December 1997- EPROM, FLASH Memory, EEPROM and NVRAM Products INTRODUCTION ST Microelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9704 BV-1 501 mk48t08 SGS M27C256 mk48t18 st microelectronics datecode M48T35 st microelectronics datecode M27C256 SGS-THOMSON ST25C16 CP 1005 marking 339 st microelectronics

    MK48T08

    Abstract: mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64
    Text: QRR9802 QUALITY & RELIABILITY REPORT July 1997 to June 1998 - EPROM, Flash Memory, EEPROM and NVRAM Products INTRODUCTION STMicroelectronics manufactures a wide range of memory types which include: Non-volatile memories: Flash memory, UV EPROM, OTP EPROM and


    Original     		PDF QRR9802 MK48T08 mk48t18 M27128A M2716 M2732A M2764A QRR9802 Marking STMicroelectronics m24c32 m28c64d M24C64

    intel pa28f400

    Abstract: AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231
    Text: AN907 APPLICATION NOTE Compatibility between St Boot Block and Intel SmartVoltage Flash Memories by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash


    Original     		PDF AN907 intel pa28f400 AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231

    Untitled

    Abstract: No abstract text available
    Text: QUALIFICATION REPORT M28F410/420, M28F411/421 4 Megabit x16 and (x8) FLASH MEMORY in SO44 and TSOP40 INTRODUCTION The M28F410/420 is a 4Megabit FLASH Memory Boot Block Dual Power Supply (5/12V) organised as 512Kx8 bits or 256Kx16 bits. The M28F411/421 is a 4 Megabit FLASH Memory Boot Block Dual Power


    Original     		PDF M28F410/420, M28F411/421 TSOP40 M28F410/420 5/12V) 512Kx8 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: M28F410 M28F420 SGS-THOMSON m _ 4 Mb x8/x16, Block Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V ± 5% or ± 10% PROGRAMMING VOLTAGE FAST ACCESS TIME: 60ns PROGRAM/ERASE CONTROLLER (P/E.C.) AUTOMATIC STATIC MODE MEMORY ERASE in BLOCKS


    OCR Scan     		PDF M28F410 M28F420 x8/x16, 0020h M28F410: 00F2h M28F420: M28F420

    tower pro sg 90

    Abstract: No abstract text available
    Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    OCR Scan     		PDF M28F410 M28F420 andx16 TSOP56 20/25mA M28F410, 7W1S37 tower pro sg 90

    Untitled

    Abstract: No abstract text available
    Text: M28F420 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Flash Memory • 5V ± 10% SUPPLY VOLTAGE ■ 1 2 V ± 5 % o r ± 10% PROGRAMMING VOLTAGE ■ FAST ACCESS TIME: 60ns ■ PROGRAM/ERASE CONTROLLER (P/E.C.) ■ AUTOMATIC STATIC MODE ■ MEMORY ERASE in BLOCKS


    OCR Scan     		PDF M28F420 512Kb 256Kb 0020h A0-A16 DQ8-DQ14 DQ15A-1

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . M28F410 M28F420 S G S -T H O M S O N 4 Megabit x8 or x16, Block Erase FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S 0 4 4 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    OCR Scan     		PDF M28F410 M28F420 TSOP56 20/25m

    Z3A11

    Abstract: A10113 M28F410 M28F420 TSOP56
    Text: M28F410 M28F420 SGS‘THOMSON G ì . H O » iL I § T [ M ! [ l( S Ì 4 Megabit (x8 or x16, Block Erase) FLASH MEMORY PRELIMINARY DATA DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or


    OCR Scan     		PDF M28F410 M28F420 TSOP56 x20mm TSOP56 20/25m Byte/50 M28F410, Z3A11 A10113 M28F420

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF