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    Untitled

    Abstract: No abstract text available
    Text: M46Z256 M46Z256Y ¿ Z T S G S -TH O M S O N ^7# KiiD g^(5 iL[l»(ê)iO(gi CMOS 256K X 16 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CO NTRO L C IRCUIT AND BATTERY ■ C O NVENTIO NAL SRAM OPERATION; UNLIM ­ ITED W RITE CYCLES


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    PDF M46Z256 M46Z256Y 46Z256Y 46Z256/256Y M46Z256, M46Z256Y 46Z256 DIP40

    m46z256

    Abstract: No abstract text available
    Text: M46Z256 M46Z256Y /= # SGS-ltfOMSON CMOS 256K x 16 ZEROPOWER SRAM • INTEGRATED LOW POWER SRAMs, POWER-FAIL CONTROL CIRCUIT and BATTERIES ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 5 YEARS of DATA RETENTION In the ABSENCE of POWER ■ PIN and FUNCTION COMPATIBLE with


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    PDF M46Z256 M46Z256Y M46Z256: M48Z256Y: M46Z256/256Y M46Z256, M46Z256Y 120ns

    Untitled

    Abstract: No abstract text available
    Text: SEE » • TTSIEB? 0036432 723 ■SGTH 7 ^ ^ - Z 3 - /V SGS-THOMSON M46Z256 M46Z256Y iIUira RDDgi S G S-TH0HS0N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA ■ INTEGRATED LOW POWER SRAM, POWER­ FUL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM­


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    PDF M46Z256 M46Z256Y 256Kx M46Z256 M46Z256Y M46Z256, 0Q38M41 PMDIP40

    Untitled

    Abstract: No abstract text available
    Text: r= J M46Z256 M46Z256Y S C S -T H O M S O N CMOS 256K x 16 ZEROPOWER SRAM PRELIMINARY DATA • INTEGRATED LOW POWER SRAM, POWERFAIL CONTROL CIRCUIT AND BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIM­ ITED WRITE CYCLES ■ 5 YEAR MINIMUM DATA RETENTION IN THE


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    PDF M46Z256 M46Z256Y M46Z256Y M46Z256, PMDIP40

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    MK45H14

    Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
    Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .


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    PDF M27C64A M27C256B M87C257 M27C512 M27V512 M27C1001 M27V101 M27C1024 M27C2001 M27V201 MK45H14 AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA

    MK48T87B24

    Abstract: ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR
    Text: •y , . r i'. " - L. - S .• u _ NON VOLATILE MÉMBMES CMOS UV EPROM and OTP ROM Size 64K 256K Part N umber O rganisation Ucc ns Vcc Range Icc ! Stby Tem perature Range (°C) Package M27C64A-15F1 8K X 8 150 5V ± 10% 30mA / 1 00nA Oto 70 FDIP28W


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    PDF M27C64A-15F1 M27C64A-20F1 M27C64A-25F1 M27C64A-30F1 M27C64A-20F6 M27C64A-25F6 M27C64A-30F6 ST16601 ST16F48 ST16SF48 MK48T87B24 ST24C02CB1 MK48T18B15 M48Z32Y-100PC1 M2764AF1 MK48Z02B-20 MKI48Z12B15 ST24C01CB1 MK48Z02B-25 ST24C16CM1TR