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    M5005 Search Results

    M5005 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    LM5005MHX/NOPB Texas Instruments 7-75V Wide Vin, 2.5A Current Mode Non-Synchronous Buck Regulator 20-HTSSOP -40 to 125 Visit Texas Instruments Buy
    LM5005MH Texas Instruments 7-75V Wide Vin, 2.5A Current Mode Non-Synchronous Buck Regulator 20-HTSSOP -40 to 125 Visit Texas Instruments
    LM5005MH/NOPB Texas Instruments 7-75V Wide Vin, 2.5A Current Mode Non-Synchronous Buck Regulator 20-HTSSOP -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    M5005 Price and Stock

    Reliance North America WJ2EDGVM-5.0-05P-14-RNA

    5 position PCB push-in spring co
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    Reliance North America WJ2EDGRM-5.0-05P-14-RNA

    5 position PCB push-in spring co
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    Reliance North America WJ2EDGBM-5.0-05P-14-RNA

    5 position PCB push-in spring co
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    Reliance North America WJ2EDGKDM-5.0-05P-14-RNA

    5 position PCB push-in spring co
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    Reliance North America WJ2EDGKNM-5.0-05P-14-RNA

    5 position PCB push-in spring co
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    M5005 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M50-050070W0845 Harwin Connectors, Interconnects - Rectangular Connectors - Headers, Male Pins - HEADER Original PDF

    M5005 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    M5705

    Abstract: M5010 l4030 L2203 ali m5705 rgb led moving message display l1113 l1636 ALi M5113 A2 l1117 445
    Text: CodeWarrior Development Studio for Microcontrollers V10.x HC S 08/RS08 Build Tools Utilities Manual Revised: June 3, 2010 Freescale, the Freescale logo, CodeWarrior and ColdFire are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Flexis and Processor Expert are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.


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    PDF 08/RS08 M5762) M5751) M5705 M5010 l4030 L2203 ali m5705 rgb led moving message display l1113 l1636 ALi M5113 A2 l1117 445

    ali m5705

    Abstract: M5010 ali m5113 tab229 M5011 M5705 306HC EC86 m5105 RS08 c code example
    Text: HC S 08/RS08 and S12(X) Build Tools Utilities Manual Revised: 12 August 2010 Freescale, the Freescale logo, CodeWarrior and ColdFire are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Flexis and Processor Expert are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.


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    PDF 08/RS08 M5762) M5751) ali m5705 M5010 ali m5113 tab229 M5011 M5705 306HC EC86 m5105 RS08 c code example

    TQM7M5013

    Abstract: tqm6m4049 GSM GPRS module GSM duplexer GPS 7M5012 TQM6M9014 gsm module datasheet TQM6M4003 lte RF Transceiver TQM679002
    Text: 2 0 0 9 Mobile Handset Products 2 0 0 9 3G - WCDMA / EDGE GSM / GPRS / EDGE CDMA Connect with TriQuint’s industry-leading RF product portfolio to build your next mobile handset solution. t Abou .TM s i e f ns Li ectio Conn Connecting the Digital World to the Global Network


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    PDF GSM850 TQM7M5013 tqm6m4049 GSM GPRS module GSM duplexer GPS 7M5012 TQM6M9014 gsm module datasheet TQM6M4003 lte RF Transceiver TQM679002

    M50-08-30-434S

    Abstract: CSK-M50 131S 431S 435S mitsumi au CSKM50
    Text: MITSUMI ミニサーキュラコネクタ Mini Circular Connectors CSK-M50 Series 特長/FEATURES CSK-M50シリーズは従来のサーキュラDINコネクタ を小型化した省スペースのコネクタで、パソコンやワ ープロ等のOA機器を始め、ゲーム機器・AV機器の


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    PDF CSK-M50 CSK-M50 M50--30- 49pins 07-30-134S-1 M50-07-30-434S M50-07-30-131S-1 M50-07-30-431S-1 M50-08-30-434S 131S 431S 435S mitsumi au CSKM50

    OPB960N55

    Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
    Text: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or


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    PDF F-Distributors9-12-05 OPB960N55 marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51

    Untitled

    Abstract: No abstract text available
    Text: SCD#QM5321 Source Control Drawing Upscreening/Manufacturing Specification P/N FT1012AMH/883-LT Title Page . List of Effective Pages .


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    PDF QM5321 FT1012AMH/883-LT

    M5010

    Abstract: M5705 M5006 m5105 OPEN M5010 M5118 M5011 M5122 M5113 M5111
    Text: Maker July 28, 1998 4 Table Of Contents Copyright and Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Copyright . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power


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    PDF 1x10u 1x109 1x101 1x108

    Untitled

    Abstract: No abstract text available
    Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as


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    PDF 1x106 1x1014cm HC685 IL-l-38535 1x109 1x101 36-Lead

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


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    PDF HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power


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    PDF HC6216 1x1014cnr2 1x109 1x101

    pepi cr

    Abstract: No abstract text available
    Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical


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    PDF MS51fl 1x106 1x101 1x109 PIN23 pepi cr

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02


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    PDF HC6116--TTL 1x10u 1x109 1x101 86A-6/88

    HC6264

    Abstract: No abstract text available
    Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical


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    PDF HC6264 1x101 1x109 36-pin HC6264

    Untitled

    Abstract: No abstract text available
    Text: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)


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    PDF HC6364 1x106 1x1014cm

    KD 2.d smd transistor

    Abstract: No abstract text available
    Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V


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    PDF 1x106 1x1014cm 1x109 1x101 HC6856 MIL-l-38535 36-Lead KD 2.d smd transistor

    HCC242

    Abstract: JAN2N2907A
    Text: @ OPTEK High-Reliability Devices High-reliability requirements demand that products be able to function under abnormally severe levels of mechanical, environmental, and electrical stress. This challenge has been met by Optek with prod­ uct designs and process control techniques that ensure high reliability and, thus, long life.


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    PDF MIL-STD-750 MIL-PRF-19500 MIL-PRF-19500 HCC242 JAN2N2907A

    Untitled

    Abstract: No abstract text available
    Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible


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    PDF HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,

    883ct

    Abstract: No abstract text available
    Text: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through


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    PDF HC6167 1x1014cnvz 1x109 1x101 1x10-® 20-pin 883ct

    honeywell mram

    Abstract: No abstract text available
    Text: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out


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    PDF 0D00fl4D 1x106 1x1014N/cm2 1x101 1x106rad honeywell mram

    x-ray cmos

    Abstract: No abstract text available
    Text: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator


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    PDF 1x10s 1x101 PIN23 HX6464/1 HX6464/2 HX6464/3 x-ray cmos

    25CXX

    Abstract: M2010 128X128 1E12 HC6116R HC6167R RAM family M2009
    Text: Honeyw ell Radiation Hardened Static RAM Famiiy Digital Technologies HC6167R 16K x 1 , HC6116R (2K x 8) Family Features • Full Military Temperature Range (-55°C to +125°C) • TTL and CMOS Compatible • Strategic Radiation Hardened •Latchup Immune


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    PDF HC6167R HC6116R HC6116R) 105ns HC6167R) HC6167R 20-pin 25CXX M2010 128X128 1E12 HC6116R RAM family M2009

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)


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    PDF HX6256 1x10erad 1x101 1x109 28-Lead 28-Lead

    Untitled

    Abstract: No abstract text available
    Text: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02


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    PDF HC6856 1x106 1x101 1x109 256Kx