Contextual Info: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power

Contextual Info: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as

M5705

Abstract: M5010 l4030 L2203 ali m5705 rgb led moving message display l1113 l1636 ALi M5113 A2 l1117 445
Contextual Info: CodeWarrior Development Studio for Microcontrollers V10.x HC S 08/RS08 Build Tools Utilities Manual Revised: June 3, 2010 Freescale, the Freescale logo, CodeWarrior and ColdFire are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Flexis and Processor Expert are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.

Contextual Info: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

Contextual Info: Honeywell HC6216 Military Products 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 |im Process • Typical 45 ns Access Time • Total Dose Hardness through 1x10 rad SiOz • Low Operating Power

ali m5705

Abstract: M5010 ali m5113 tab229 M5011 M5705 306HC EC86 m5105 RS08 c code example
Contextual Info: HC S 08/RS08 and S12(X) Build Tools Utilities Manual Revised: 12 August 2010 Freescale, the Freescale logo, CodeWarrior and ColdFire are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Flexis and Processor Expert are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.

pepi cr

Contextual Info: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical

Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2Kx 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 iim Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad Si02

HC6264

Contextual Info: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical

chip diagram of ram chip 6116

Abstract: m2011 bond pull M2019 M2010 M2011 S102 marking RAD
Contextual Info: Honeywell HC6116—TTL INPUT Digital Technologies Preliminary 2K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 |xm Process • Typical 90 ns Access Time • Total Dose Hardness through 1x10 rad SiOz

TQM7M5013

Abstract: tqm6m4049 GSM GPRS module GSM duplexer GPS 7M5012 TQM6M9014 gsm module datasheet TQM6M4003 lte RF Transceiver TQM679002
Contextual Info: 2 0 0 9 Mobile Handset Products 2 0 0 9 3G - WCDMA / EDGE GSM / GPRS / EDGE CDMA Connect with TriQuint’s industry-leading RF product portfolio to build your next mobile handset solution. t Abou .TM s i e f ns Li ectio Conn Connecting the Digital World to the Global Network

M50-08-30-434S

Abstract: CSK-M50 131S 431S 435S mitsumi au CSKM50
Contextual Info: MITSUMI ミニサーキュラコネクタ Mini Circular Connectors CSK-M50 Series 特長／FEATURES CSK-M50シリーズは従来のサーキュラDINコネクタ を小型化した省スペースのコネクタで、パソコンやワ ープロ等のOA機器を始め、ゲーム機器・AV機器の

Contextual Info: Honeywell HC6364 Military Products 8K x 8 RADIATION-HARDENED STATIC RAM FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxial 1.2 urn Process • Total Dose Hardness through 1x106 rad S i02 • Neutron Hardness through 1x1014cm '2 • Access Time of 25 nsec (typical)

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

Contextual Info: SCD#QM5321 Source Control Drawing Upscreening/Manufacturing Specification P/N FT1012AMH/883-LT Title Page . List of Effective Pages .

M5010

Abstract: M5705 M5006 m5105 OPEN M5010 M5118 M5011 M5122 M5113 M5111
Contextual Info: Maker July 28, 1998 4 Table Of Contents Copyright and Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Copyright . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

HCC242

Abstract: JAN2N2907A
Contextual Info: @ OPTEK High-Reliability Devices High-reliability requirements demand that products be able to function under abnormally severe levels of mechanical, environmental, and electrical stress. This challenge has been met by Optek with prod­ uct designs and process control techniques that ensure high reliability and, thus, long life.

Contextual Info: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible

883ct

Contextual Info: H O N E Y WE L L / S H o n 1SE D I S E C e y w 4551072 G O G O B a ì M | HC6167 e l l 16K x 1 RADIATION-HARDENED STATIC RAM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 pm Process • Typical 140 ns Access Time • Total Dose Hardness through

honeywell mram

Contextual Info: 52E D • 4SSlfl?2 - 0D00fl4D DBO ■ H0 N3 HONEYI i l EL L/ S S E C _ Honeywell Preliminary Military Products 16K x 1 NON-VOLATILE RAM HC7167 'T - 4 k '2 £ '0 £ ' FEATURES • Non-volatile and NDRO Non-destructive read out

x-ray cmos

Contextual Info: SSE » 4SS1Ô75 OOOOfiHb 70G • Military Products - Honeywell H0N3 H ONE Y UE L L / S S E C Preliminary 64K x 1 RADIATION-HARDENED STATIC RAM - SOI HX6464 'T '- 4 b - 2 . V D 5 FEATURES RADIATION OTHER Fabricated with RICMOS Silicon on Insulator

25CXX

Abstract: M2010 128X128 1E12 HC6116R HC6167R RAM family M2009
Contextual Info: Honeyw ell Radiation Hardened Static RAM Famiiy Digital Technologies HC6167R 16K x 1 , HC6116R (2K x 8) Family Features • Full Military Temperature Range (-55°C to +125°C) • TTL and CMOS Compatible • Strategic Radiation Hardened •Latchup Immune

Contextual Info: Honeywell Military/Space Products Preliminary 32K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6256 FEATURES RADIATION OTHER Fabricated with RICMOS -IV Silicon on Insulator SOI 0.8 nm Process • Read/Write Cycle Times < 25 ns (-55 to 125°C) Total Dose Hardness through 1x10erad(Si02)

Contextual Info: HONE YWEL L / S S E C 3ÖE D 4ssia?a ooddsms a H0 N3 '•■V Military Products 32K X Preliminary 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS Bulk 0.8 nm Process • Total Dose Hardness through 1x106 rad Si02